具有AGV和AS/RS的装配线物流系统分析

阐述了具有自动导引车(AGV)和自动存取系统(AS/RS)的物流系统的工作流程,建立了该类物流系统的排队网络模型,分析了系统的性能与系统设计参数之间的关系,为设计具有AGV和AS/RS的复杂物流系统提供依据。

五十万年来人类对黄土地区的适应性初步研究

After researching the coupling relationship among choosing raw material, stone technology, environmental change and Huaman evolution stage of archeological sites in different sediment in north China, the author thinks that: The human behavior is different in loessic region between glacial and interglacial ages. In Human evolution procession, Human erectus and early Human sapiens may co-exist in north China before L2, but after L2Human erectus disappear, and the stone technology of early Human sapiens become more progression. After comparing the age and environment, geology context, stone technology and using fire between them, we may make a preliminary conclusion that the environmental change during L2 maybe the outer reason and different capability of adaptation between Human erectus and early Human Sapiensis is the inner reason of Human erectus becoming disappear. The environmental change in last glacial climax and deglacial may result in new crowd and new culture entering into North China, which break the culture tradition which exist since early stage of palaeolithic. And play an important role from palaeolithic stage into neolithic stage. So unstable envirnmental change play an important role in Human evolution procession, and different scale environment change have different effect, large scale environmental change make small effect, but millenary scale even more short scale environmental change may bear more important role, some times it can transfer the evolution direction.

Determination of Proper Processing Conditions of Material Surface Heat Treatment Through Finite Element Method

A two-dimensional model has been developed based on the experimental results of stainless steel remelting with the laminar plasma technology to investigate the transient thermo-physical characteristics of the melt pool liquids. The influence of the temperature field, temperature gradient, solidification rate and cooling rate on the processing conditions has been investigated numerically. Not only have the appropriate processing conditions been determined according to the calculations, but also they have been predicted with a criterion established based on the concept of equivalent temperature area density (ETAD) that is actually a function of the processing parameters and material properties. The comparison between the resulting conditions shows that the ETAD method can better predict the optimum condition.

Blue green emission from a Cu+-Doped transparent material prepared by sintering porous glass

A colorless transparent, blue green emission material was fabricated by sintering porous glass impregnated with copper ions. The emission spectral profile obtained from Cu+ -doped high silica glass (HSG) by 267-mn monochromatic light excitation matches that obtained by pumping with an 800-nm femtosecond laser, indicating that the emissions in both cases come from an identical origin. The upconversion emission excited by 800-nm femtosecond laser is considered to be a three-photon excitation process. A tentative scheme of upconverted emission from Cu+ -doped HSG was also proposed. The glass materials presented herein are expected to find application in lamps, high density optical storage, and three-dimensional color displays.

Physiological responses to capture and handling of free-ranging male Yangtze finless porpoises (Neophocaena phocaenoides asiaeorientalis)

We captured free-ranging male Yangtze finless porpoises over three seasons and assayed leukocytes and serum biochemistry to investigate physiological responses to the capture and handlings. Serum thyroid hormones (THs) declined sharply in those porpoises compared with hormone variation in a captive male finless porpoise. Hypernatremia and hypokalemia were also significant in the free-ranging animals suggesting that conservation of serum sodium might be acutely vital for this freshwater subspecies. The animals captured in spring showed more significant neutrophilia and eosinopenia than those captured in autumn suggesting that they may be more affected by capture during the breeding season. Furthermore, physical examination of porpoises when out of the water was apparently stressful, particularly when they were kept out of the water for longer periods. However, an increase in circulating THs may be an adaptive response to accommodate these short-term stresses.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Fabrication of arrayed waveguide grating based on SOI material

An arrayed waveguide grating based on SOI material was fabricated by inductive coupled plasma (ICP) etching technology. The central wavelength of the device was designed at 1.5509 mu m and the channel spacing was 200 GHz. Comparing with the values of the design, the differences of the central wavelength and the channel spacing in the test were 0.28 nm and 0.02 nm, respectively. The adjacent channel crosstalk was about 10 dB, and the uniformity of the five channels' insertion loss was only 0.7 dB. The results show that the device can be used as a demultiplexer.

High performance resonant tunneling diode on a new material structure

A new material structure with Al0.22Ga0.78As/In0.15Ga0.85As/GaAs emitter spacer layer and GaAs/In0.15Ga0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio (PVCR) is 7.44 for RTD Analysis on these results suggests that the material structure will be helpful to improve the quality, of RTD.

A low power consumption thermo-optic variable optical attenuator based on SOI material

A SOI thenno-optic variable optical attenuator with U-grooves based on a multimode interference coupler principle is fabricated. The dynamic attenuation range is 0 to 29 dB; at the wavelength range between 1510 nm and 1610nm, and the maximum power consumption is only l30mW. Compared to the variable optical attenuator without U-groove, the maximum power consumption decreases more than 230mW

Research on micro-optical lenses fabrication technology

We present a detail investigation on the development of a series of gradient index (GRIN) optical glass microlens and polymer microlens and microlens arrays in our laboratory in recent years. The special glass material GRIN lenses have been fabricated mainly by using ion-exchange technology, which are applied to construct micro-optic devices and other applications. On one hand, we demonstrated the light propagation and imaging properties of GRIN lenses and the results analyzed. On the other hand, we have explored a drop-on-demand ink-jet printing method to produce microlens array using nano-scale polymer droplets involved with a uniform ultraviolet light and heat solidifying process. The experimental setup for manufacturing polymer microlens array and the performance of refractive microlens elements are also given in this paper. (C) 2006 Elsevier GmbH. All rights reserved.

STUDIES OF THE PROMISING MATERIAL COSI2 ON GAAS SUBSTRATES

The thermal stability of CoSi2 thin films on GaAs substrates has been studied using a variety of techniques. The CoSi2 thin films were formed by depositing Co(500 angstrom) and Si(1800 angstrom) layers on GaAs substrates by electron-beam evaporation followed by annealing processes, where the Si inter-layer was used as a diffusion/reaction barrier at the interface. The resistivity of CoSi2 thin films formed is about 30 muOMEGA cm. The Schottky barrier height of CoSi2/n-GaAs is 0.76 eV and the ideality factor is 1.14 after annealing at 750-degrees-C for 30 min. The CoSi2/GaAs interface is determined to be thermally stable and the thin film morphologically uniform on GaAs after 900-degrees-C/30 s anneal. The CoSi2 thin films fulfill the requirements in GaAs self-aligned gate technology.

Silicon: the promising material for phontonic integrated circuits platform

The development of optical network demands integrated arid multiple functionality modules to lowing cost and acquire highly reliability. Among the various contender materials to be photonic integrated circuits platform, silicon exhibits dominant characteristics and is the most promising platform materials. The paper compares the characteristics of some candidate materials with silicon and reviews recent progress in silicon based photonic integration technology. Tile challenges to silicon for optical integration for optical networking application arc also indicated.

Lead(IV) dioxide: an effective electron injection material to realize high-efficiency inverted top-emitting organic light-emitting diodes

Lead(IV) dioxide (PbO2) has been used as the electron injection layer (EIL) to realize high-efficiency inverted top-emitting organic light-emitting diodes (I-TOLEDs). It can be seen that the inserting of the PbO2 EIL significantly reduces operational voltage, thus greatly improving the current efficiency and power efficiency of fabricated I-TOLEDs. The 10-(2-benzothiazolyl)-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H, 11H-[1] benzopyrano [6, 7, 8-ij] quinolizin-11-one (C545T)-based I-TOLEDs with the PbO2 EIL exhibit a maximum current efficiency of 31.6 cd A(-1) and a maximum power efficiency of 14.3 lm W-1, which are both higher than 22.5 cd A(-1) and 5.4 lm W-1 of the I-TOLEDs with LiF as the EIL respectively. A detailed analysis with respect to the role mechanism of PbO2 in electron injection has been presented. The improvement in EL performance is attributed to the formation of the interfacial dipoles at the electrode interface due to charge transfer between PbO2 and Alq(3).