20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

用于高重复频率热容主振荡功率放大器激光系统的波前检测技术

高重复频率热容主振荡功率放大器(MOPA)激光系统的工作过程一般只持续几秒至几十秒,在此过程中系统输出光束的波前畸变是动态变化的。采用环路径向剪切干涉(CRWSI)技术对高重复频率热容MOPA系统波前畸变的变化过程进行检测,并对系统的总体结构进行了设计。搭建了一个简化的实验系统,采用平凹透镜来代替光放大器产生波前畸变,并由此对环路径向剪切干涉仪的测量精度进行了验证。结果表明,实验测量结果与理论计算值之间的峰值误差为7.8%(0.02λ)。

高功率脉冲双包层光纤激光器的新进展

对高功率脉冲双包层光纤激光器的国内外研究进展进行评述，通过建立了小信号瞬态增益模型，对脉冲激光信号经过双包层光纤放大后的波形进行了数值模拟。分析了基于MOPA方式脉冲双包层光纤激光器的几个问题，报道了中科院上海光机所采用振荡-放大（MOPA）方法获得133．8W平均功率脉冲放大输出的实验结果。

高功率双包层光纤放大器

高功率双包层光纤放大器在光纤传感、光纤通讯、光谱测量和惯性约束聚变等领域有广泛应用。介绍了两种获得放大激光输出的高功率双包层光纤放大器：单频双包层光纤放大器和脉冲双包层光纤放大器。分析了它们的工作原理及关键技术，并对国内外近期进展作了综述。

Eye-safe, high-energy, single-mode all-fiber laser with widely tunable repetition rate

We present a novel high-energy, single-mode, all-fiber-based master-oscillator-power-amplifier (MOPA) laser system operating in the C-band with 3.3-ns pulses and a very widely tunable repetition rate, ranging from 30 kHz to 50 MHz. The laser with a maximum pulse energy of 25 mu J and a repetition rate of 30 kHz is obtained at, a wavelength of 1548 nm by using a double-clad, single-mode, Er:Yb co-doped fiber power amplifier.

133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 μm SiGe BiCMOS technology and occupy 1.12×1.25 mm~2 die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85℃ converges within±3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at V_(DS) =40V, I(DS)= 0. 9A, a maximum CW output power of 41. 4dBm with a maximum power added efficiency (PAE) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4GHz.

A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A large area multi-finger configuration power SiGe HBT device(with an emitter area of about 880μm~2)was fabricated with 2μm double-mesa technology.The maximum DC current gain β is 214.The BV_(CEO) is up to 10V,and the BV_(CBO) is up to 16V with a collector doping concentration of 1×10~(17)cm~(-3) and collector thickness of 400nm.The device exhibits a maximum oscillation frequency f_(max) of 19.3GHz and a cut-off frequency f_T of 18.0GHz at a DC bias point of I_C=30mA and V_(CE)=3V.MSG(maximum stable gain)is 24.5dB,and U(Mason unilateral gain)is 26.6dB at 1GHz.Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.

Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.

7.3 W国产单频光纤放大器

报道了一种MOPA式国产单频光纤放大器。该放大器采用连续波单频激光器作为主振荡器，采用我国自行设计和制造的大模场面积掺Yb双包层光纤作为功率放大器，在波长1064 nm处实现了最高7.3 W的连续激光输出，斜率效率为39%，光－光转换效率为26%。此外，对光谱特性及放大的自发发射的抑制也进行了探讨。