The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD

AlxInyGa1-x-yN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures from 800 to 870degreesC. The incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of Al remains nearly constant. The optical properties of the samples have been investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL) at different temperatures. The results show that the sample grown at 820 C exhibits the best optical quality for its large PL intensity and the absence of the yellow luminescence. Furthermore the temperature-dependent PL and TRPL of the sample reveals its less exciton localization effect caused by alloy fluctuations. In the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesC, in good agreement with the PL results, The improvement of AlxInyGa1-x-yN quality is well correlated with the incorporation of indium into AlGaN and the possible mechanism is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

Comparison of modal gain and material gain for strong guiding slab waveguides

The relations between the gain factor, defined as the ratio of modal gain to material gain, and the optical confinement factor are discussed for the TE and TM modes in slab waveguides. For the TE modes, the gain factor is larger than the optical confinement factor, due to the zigzag propagation of the modal light ray in the core layers. For the TM modes, the existence of a nonzero electric field in the propagation direction results in a more complicated relation of the gain factor and the confinement factor. For an air-Si-SiO2 strong slab waveguide, the numerical results show that the modal gain can be larger than the material gain and the higher-order transverse mode can have an even larger modal gain than the fundamental mode, The efficiency of waveguiding photodetectors can be improved by applying the modal gain or loss characteristics in strong waveguides.

Geochemical character and material source of sediments in the eastern Philippine Sea

Based upon analyses of grain-size, rare earth element (REE) compositions, elemental occurrence phases of REE, and U-series isotopic dating, the sediment characteristics and material sources of the study area were examined for the recently formed deep-sea clays in the eastern Philippine Sea. The analytical results are summarized as follows. (1) Low accumulation rate, poor sorting and roundness, and high contents of grains coarser than fine silt indicate relatively low sediment input, with localized material source without long distance transport. (2) The REE Contents are relatively high. Shale-normalized patterns of REE indicate weak enrichment in heavy REE (HREE), Ce-passive anomaly, and Eu-positive anomaly. (3) Elemental occurrence phases of REE between the sediments with and without crust are similar. REE mainly concentrate in residual phase and then in ferromanganese oxide phase. The light REE (LREE) enrichment, Ce-positive anomaly, and Eu-positive anomaly occur in residual phase. Ferromanganese oxide phase shows the characteristics of relatively high HREE content and Ce-passive anomaly. (4) There are differences in each above mentioned aspect between the sediments with and without ferromanganese crust. (5) Synthesizing the above characteristics and source discriminant analysis, the study sediments are deduced to mainly result from the alteration of local and nearby volcanic materials. Continental materials transported by wind and/or river (ocean) flows also have minor contributions.

Mineral provinces and material provenance of the surficial sediments near the Zhongsha Islands in the South China Sea

Characteristics and distribution patterns of elastic minerals (0.063 similar to 0.125 mm) in bottom sediments represent a significant indicator for the identification of the origin of sediment. One hundred and fourteen surface sediment samples, which were collected from the area near the Zhongsha Islands in the South China Sea, were analysed to identify the mineral suites and their distributions in the study area. The area can be divided into three mineral provinces: ( I) a province of biogenic minerals, which mainly originate from the Zhongsha Atoll; ( H) a province of volcanogenic minerals, which are mainly derived from local basaltic seamounts and small-scale volcanoes that are probably erupting, with some influences from the island-are volcanic region around the South China Sea; and (II) a mixed mineral province whose material source includes biogenic minerals, volcanogenic minerals and terrigenous minerals; the last province can be subdivided into a mixed mineral sub-province of the northeastern part of the study area, in which terrigenous minerals are mainly derived from China's Mainland and do not exceed 17 degrees N, and a mixed mineral sub-province of the southeastern part of the study area, in which terrigenous minerals are derived from Kalimantan and Indochina Peninsula and might be further transported into the deep sea basin through submarine canyons.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Determination of Proper Processing Conditions of Material Surface Heat Treatment Through Finite Element Method

A two-dimensional model has been developed based on the experimental results of stainless steel remelting with the laminar plasma technology to investigate the transient thermo-physical characteristics of the melt pool liquids. The influence of the temperature field, temperature gradient, solidification rate and cooling rate on the processing conditions has been investigated numerically. Not only have the appropriate processing conditions been determined according to the calculations, but also they have been predicted with a criterion established based on the concept of equivalent temperature area density (ETAD) that is actually a function of the processing parameters and material properties. The comparison between the resulting conditions shows that the ETAD method can better predict the optimum condition.

Determination of plastic properties by instrumented spherical indentation: Expanding cavity model and similarity solution approach

The present paper aims to develop a robust spherical indentation-based method to extract material plastic properties. For this purpose, a new consideration of-piling-up effect is incorporated into the expanding cavity model; an extensive numerical study on the similarity Solution has also been performed. As a consequence, two semi-theoretical relations between the indentation response and material plastic properties are derived, with which plastic properties of materials can be identified from a single instrumented spherical indentation curve, the advantage being that this approach no longer needs estimations of contact radius with given elastic modulus. Moreover, the inconvenience in using multiple indenters with different tip angles can be avoided. Comprehensive sensitivity analyses show that the present algorithm is reliable. Also, by experimental verification performed oil three typical materials, good agreement of the material properties between those obtained from the reverse algorithm and experimental data is obtained.

Determination Of Plastic Properties By Instrumented Spherical Indentation: Expanding Cavity Model And Similarity Solution Approach

The present paper aims to develop a robust spherical indentation-based method to extract material plastic properties. For this purpose, a new consideration of-piling-up effect is incorporated into the expanding cavity model; an extensive numerical study on the similarity Solution has also been performed. As a consequence, two semi-theoretical relations between the indentation response and material plastic properties are derived, with which plastic properties of materials can be identified from a single instrumented spherical indentation curve, the advantage being that this approach no longer needs estimations of contact radius with given elastic modulus. Moreover, the inconvenience in using multiple indenters with different tip angles can be avoided. Comprehensive sensitivity analyses show that the present algorithm is reliable. Also, by experimental verification performed oil three typical materials, good agreement of the material properties between those obtained from the reverse algorithm and experimental data is obtained.

Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD

Polycrystalline silicon (poly-Si) films(similar to 10 mu m) were grown from dichlorosilane by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 Angstrom/s at the substrate temperature (T-s) of 1030 degrees C. The average grain size and carrier mobility of the films were found to be dependent on the substrate temperature and material. By using the poly-Si films, the first model pn(+) junction solar cell without anti-reflecting (AR) coating has been prepared on an unpolished heavily phosphorus-doped Si wafer, with an energy conversion efficiency of 4.54% (AM 1.5, 100 mW/cm(2), 1 cm(2)).

Johnson-Cook材料模型参数的实验测定

介绍了一种通过Hopkinson拉伸实验、圆筒爆炸试验和计算机仿真来确定Johnson-Cook材料模型中相关常数的方法。

Shock-Induced Near-Wall Two-Phase Flow Structure Over a Micron-Sized Particles Bed

The present paper studies numerical modelling of near-wall two-phase flows induced by a normal shock wave moving at a constant speed, over a micronsized particles bed. In this two-fluid model, the possibility of particle trajectory intersection is considered and a full Lagrangian formulation of the dispersed phase is introduced. The finiteness of the Reynolds and Mach numbers of the flow around a particle as well as the fineness of the particle sizes are taken into account in describing the interactions between the carrier- and dispersed- phases. For the small mass-loading ratio case, the numerical simulation of flow structure of the two phases is implemented and the profiles of the particle number density are obtained under the constant-flux condition on the wall. The effects of the shock Mach number and the particle size and material density on particle entrainment motion are discussed in detail.The obtained results indicate that interphase non-equilibrium in the velocity and temperature is a common feature for this type of flows and a local particle accumulation zone may form near the envelope of the particle trajectory family.