The wideband high-linearity mixers for cable television tuner application

The wideband high-linearity mixers for a double conversion cable TV tuner is presented. The up-conversion mixer converts the input signal from 100MHz to 1000 MHz to the intermediate frequency (IF) of I GHz above. And the down-conversion mixer converts the frequency back. The degeneration resistors are used to Improve the linearity. The tuner is implemented in a 0.35 mu m SiGe technology. Input power at 1dB compression point can reach +14.23dBm. The lowest noise figure is 17.5dB. The two mixers consume 103mW under a supply voltage of 5 V.

A high-gain high-linearity wide-band low noise amplifier for terrestrial and cable receptions

This paper presents the design of a wide-band low-noise amplifier (LNA) implemented in a 0.35 mu m SiGe BiCMOS technology for cable (DVB-C) and terrestrial (DVB-T) tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure(NF) of the wideband LNA is 5dB, its 1-dB compression point is -2dBm and IIP3 is 8dBm. The LNA dissipates 120mW power with a 5-V supply.

A low power high linearity baseband for a direct conversation CMMB tuner

An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.

A Wide-Band High-Linearity Down-Conversion Mixer for Cable Receptions

We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches ＋ 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.

Identification of nonlinear dynamic systems: Time-frequency filtering and skeleton curves

The nonlinear behavior varying with the instantaneous response was analyzed through the joint time-frequency analysis method for a class of S. D. O. F nonlinear system. A masking operator an definite regions is defined and two theorems are presented. Based on these, the nonlinear system is modeled with a special time-varying linear one, called the generalized skeleton linear system (GSLS). The frequency skeleton curve and the damping skeleton curve are defined to describe the main feature of the non-linearity as well. Moreover, an identification method is proposed through the skeleton curves and the time-frequency filtering technique.

Non-Linear Wave-Induced Transient Response of Soil Around a Trenched Pipeline

Submarine pipelines are always trenched within a seabed for reducing wave loads and thereby enhancing their stability. Based on Biot’s poroelastic theory, a two-dimensional finite element model is developed to investigate non-linear wave-induced responses of soil around a trenched pipeline, which is verified with the flume test results by Sudhan et al. [Sudhan, C.M., Sundar, V., Rao, S.N., 2002. Wave induced forces around buried pipeline. Ocean Engineering, 29, 533–544] and Turcotte et al. [Turcotte, B.R., Liu, P.L.F., Kulhawy, F.H., 1984. Laboratory evaluation of wave tank parameters for wave-sediment interaction. Joseph H. Defree Hydraulic Laboratory Report 84-1, School of Civil and Environmental Engineering, Cornell University]. Non-linear wave-induced transient pore pressure around pipeline at various phases of wave loading is examined firstly. Unlike most previous investigations, in which only a single sediment layer and linear wave loading were concerned, in this study, the influences of the non-linearity of wave loading, the physical properties of backfill materials and the geometry profile of trenches on the excess pore pressures within the soil around pipeline, respectively, were explored, taking into account the in situ conditions of buried pipeline in the shallow ocean zones. Based on the parametric study, it is concluded that the shear modulus and permeability of backfill soils significantly affect the wave-induced excess pore pressures around trenched pipeline, and that the effect of wave non-linearity becomes more pronounced and comparable with that of trench depth, especially at high wave steepness in shallow water.

Measurement of high-voltage pulses employing a quartz pockels cell

A high-voltage measuring system, employing a quartz Pockels cell, is described. The system is capable of a large voltage range, a fast response time (ns), a high SNR, an excellent accuracy, a good linearity, and high reliability. Furthermore, the Pockels cell can be isolated from ground potential. Equally important, the detection system can be isolated from sources of electrical noise present in, for example, fast discharges.

Noninterferometric measurement of lead zirconate titanate inverse piezoelectric extension

A noncontacting and noninterferometric depth discrimination technique, which is based on differential confocal microscopy, was used to measure the inverse piezoelectric extension of a piezoelectric ceramic lead zirconate titanate actuator. The response characteristics of the actuator with respect to the applied voltage, including displacement, linearity, and hysteresis, were obtained with nanometer measurement accuracy. Errors of the measurement have been analyzed. (C) 2001 Society of Photo-Optical Instrumentation Engineers.

负折射原子介质中的克尔非线性增强

分析了四能级原子系统中左手材料的克尔非线性特性。研究表明，由于量子干涉作用,选择合适的物理参数，可以在这种负折射原子介质中获得无吸收增强的克尔非线性。这种介质不但表现出很强的克尔非线性而且还可以起到相位补偿和振幅补偿的作用。

基于U形塑料光纤的氧气传感器

报道了一种基于荧光猝灭原理的光纤氧气传感器.采用塑料光纤作为传感和传光元件进行氧气传感,传感头制成U形.以邻菲咯啉钌作为荧光标记物,用溶胶-凝胶法制备敏感材料.采用相移法来实现对荧光寿命的测定.测量了不同弯曲半径传感头对氧气传感的灵敏度,发现当U形光纤的弯曲半径较小时系统的灵敏度较高.对荧光寿命和氧气浓度的关系进行了测量,发现二者呈亚线性关系,提出双荧光体模型解释这一实验现象.

一种新型光纤光栅无啁啾调谐方法

分析了基于弹性梁的光纤光栅调谐原理，引入了轴向直变传递系数的概念，提出利用部分纯弯曲调谐方法，可实现光纤光栅宽带无啁嗽调谐。在实验中，利用部分纯弯曲调谐法，获得了20．1nm的光纤光栅无啁嗽调谐范围，调谐线性拟合度为0．9996，调谐过程中光栅反射谱的3dB带宽变化小于0．07nm，峰值反射率变化小于0．2dB，基本无啁嗽现象产生，实验结果和理论分析一致。

Ultrafast non-linear optical properties of Ge20As25Se55 chalcogenide films

The non-resonant third-order non-linear optical properties of amorphous Ge20As25Se55 films were studied experimentally by the method of the femtosecond optical heterodyne detection of optical Kerr effect. The real and imaginary parts of complex third-order optical non-linearity could be effectively separated and their values and signs could be also determined, which were 6.6 x 10(-12) and -2.4 x 10(-12) esu, respectively. Amorphous Ge20As25Se55 films showed a very fast response in the range of 200 fs under ultrafast excitation. The ultrafast response and large third-order non-linearity are attributed to the ultrafast distortion of the electron orbitals surrounding the average positions of the nucleus of Ge, As and Se atoms. The high third-order susceptibility and a fast response time of amorphous Ge20As25Se55 films makes it a promising material for application in advanced techniques especially in optical switching. (c) 2005 Elsevier B.V. All rights reserved.

Femtosecond optical Kerr effect study of Ge(10)AS(40)S(30)Se(20) film

The results of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultrafast pulses in amorphous Ge10As40S30Se20 film is reported in this paper. The film shows an optical non-linear response of: 200 fs under ultrafast 80 fs-pulse excitation and the values of real and imaginary parts of non-linear susceptibility chi((3)) were 9.0 X 10(-12) and -4.0 X 10(-12) esu, respectively. The large third-order non-linearity and ultrafast response are attributed to the ultrafast distortion of the electron orbits surrounding the average positions of the nucleus of Ge, As, S and Se atoms. This Ge10As40S30Se20 chalcogenide glass would be expected as a promising material for optical switching technique. (c) 2005 Elsevier Ltd. All rights reserved.

Non-resonant third-order non-linear optical properties of amorphous GeSe2 film

The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.