A New High-Spin Level Scheme of I-128

High-spin states in the odd-odd nucleus I-128 are investigated via the Sn-124(Li-7,3n)I-128 reaction at 28 and 32 MeV beam energies. A new level scheme of I-128 is established up to high-spin states at I-pi = 16, including 48 levels and 72 gamma transitions. The present level scheme is largely different from the one in a recent publication due to identification of several doublet and triplet gamma transitions and their proper placements in the level scheme. The high-spin level structure exhibits no obvious collective properties and is possibly associated with two and multi-quasiparticle configurations.

ESR STUDY OF SUPERHYPERFINE INTERACTION OF I-127 IN [CU(IO5OH)(2)](5-) ION COMPLEX

ESR method has been used to study superhyperfine. interaction of I-127 in [Cu (IO5OH)(2)](5-) ion for Na4KCu(IO5OH)(2) . 12H(2)O single crystal. The main purpose of this paper is to confirm the existence of unpaired electron spin on iodine atom and to find a reasonable explanation for the spin delocalization of CU2+ ions. Based on the ESR parameters of paramagnetic [Cu(IO5OH)(2)](5-) ions, the calculated results show that about 0.77% of the unpaired eletron spin is located on each iodine atom.

Energy level analyses of even-parity J=1 and 2 Rydberg states of Sn I by multichannel quantum defect theory

This paper analyzes the energy levels along the even-parity J=1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. Below 59198 cm~(-1), a total of 85 and 23 new energy levels, respectively, in the J=1 and J=2 series, which cannot be measured previously by experiments, are predicted in this work. Based on the calculated admixture coefficients of each channel, interchannel interactions were discussed in detail. The results are helpful to understand the characteristics of configuration interaction among even-parity levels in Sn I.

Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nanoelectronic devices

In this work a practical scheme is developed for the first-principles study of time-dependent quantum transport. The basic idea is to combine the transport master equation with the well-known time-dependent density functional theory. The key ingredients of this paper include (i) the partitioning-free initial condition and the consideration of the time-dependent bias voltages which base our treatment on the Runge-Gross existence theorem; (ii) the non-Markovian master equation for the reduced (many-body) central system (i.e., the device); and (iii) the construction of Kohn-Sham master equations for the reduced single-particle density matrix, where a number of auxiliary functions are introduced and their equations of motion (EOMs) are established based on the technique of spectral decomposition. As a result, starting with a well-defined initial state, the time-dependent transport current can be calculated simultaneously along with the propagation of the Kohn-Sham master equation and the EOMs of the auxiliary functions.

ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme taking into account 10 atomic orbitals (s-, p-, and d-type) applied to a supercell containing 256 atoms is used to calculate the bound states of the reconstructed 90-degrees partial dislocation in Si. The results differ significantly from our earlier calculations on the unreconstructed 90-degrees partial using the same method. We find two bands separate from each other in the entire Brillouin zone and the upper band penetrates deep into the indirect band gap which is in contradiction with the general opinion that core reconstruction clears the band gap of dislocation states.