Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields

Electron cyclotron resonance CR) measurements have been carried out in magnetic fields up to 32 T to study electron-phonon interaction in two heavily modulation-delta -doped GaAs/Al0.3Ga0.7As single-quantum-well samples. No measurable resonant magnetopolaron effects were observed in either sample in the region of the GaAs longitudinal optical (LO) phonons. However, when the CR frequency is above LO phonon frequency, omega (LO)=E-LO/(h) over bar, at high magnetic fields (B>27 T), electron CR exhibits a strong avoided-level-crossing splitting for both samples at frequencies close to (omega (LO)+ (E-2-E-1)1 (h) over bar, where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large with the minimum separation of 40 cm(-1) occurring at around 30.5 T. A detailed theoretical analysis, which includes a self-consistent calculation of the band structure and the effects of electron-phonon interaction on the CR, shows that this type of splitting is due to a three-level resonance between the second Landau level of the first electron subband and the lowest Landau level of the second subband plus one GaAs LO phonon. The absence of occupation effects in the final states and weak screening or this three-level process yields large energy separation even in the presence of high electron densities. Excellent agreement between the theory and the experimental results is obtained.

Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-delta-doped GaAs/Al0.3Ga0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy E-LO at B > 27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E-LO + (E-2 - E-1), where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm(-1) around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LI, of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence: of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons. (C) 1998 Elsevier Science B.V. All rights reserved.

Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

Self-consistent calculation of electronic states in asymmetric double barrier structure

With contributions from both three-dimensional (3D) electrons in heavily doped contacts and 2D electrons in the accumulation layer, a self-consistent calculation based on effective mass theory is presented for studying the anomalous behaviour of the quasi-bound levels in the accumulation layer and that in the central well of an asymmetric double barrier structure (DBS). By choosing the thickness of the incident barrier properly, it is revealed that these two quasi-bound levels may merge into a unique bound level in the off-resonance regime which shows a very good 2D nature in contrast to the conventional picture for level crossing. An evident intrinsic I-V bistability is also shown. It is noticeable that the effect of charge build-up in the central well is so strong that the electric field in the incident barrier even decreases when the applied bias increases within the resonant region.

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons. (C) 1998 Elsevier Science B.V. All rights reserved.

Resonant subband Landau level coupling in symmetric quantum well

Subband structure and depolarization shifts in an ultrahigh mobility GaAs/Al0.24Ga0.76As quantum well are studied using magnetoinfrared spectroscopy via resonant subband Landau level coupling. Resonant couplings between the first and up to the fourth subbands are identified by well-separated antilevel-crossing split resonance, while the hy-lying subbands were identified by the cyclotron resonance linewidth broadening in the literature. In addition, a forbidden intersubband transition (first to third) has been observed. With the precise determination of the subband structure, we find that the depolarization shift can be well described by the semiclassical slab plasma model and the possible origins for the forbidden transition are discussed.

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

LEVEL SET输运方程的求解方法及其对气-液两相流运动界面数值模拟的影响

用数值模拟方法来研究气-液两相流动与传热现象是当今多相流领域的一个热门课题.由于两相流固有的复杂性,气-液两相流界面迁移现象的数值模拟一直是两相流研究中的一大难点.本文介绍了捕捉气-液两相流相界面运动的水平集方法(Level Set)及其研究进展,介绍了求解Level Set输运方程的3种方法,即一般差分格式、Superbee-TVD格式和Runge-Kutta法-5阶WENO组合格式.结合主流场的求解,分别用这3种方法对4种典型相界面在5种流场中的迁移特性进行了模拟计算,并对计算结果进行了比较和分析.结果表明,Runge-Kutta法-5阶WENO组合格式求解Level Set输运方程的效果最好,在以后的计算中将主要采用这种组合格式来进行气-液相界面输运方程的求解.

Mechano-Chemical Coupling at Molecular Level: Forced Dissociation of Selectin/Ligand Binding

Mechano-chemical coupling is a common phenomenon that exists in various biological processes at different physiological levels. Bone tissue remodeling strongly depends on the local mechanical load. Leukocytes are sheared to form the transient aggregates with platelets or other leukocytes in the circulation. Flow pattern affects the signal transduction pathways in endothelial cells. Receptor/ligand interactions are important to cell adhesion since they supply the physical linkages...

Measuring Receptor/Ligand Interaction at the Single-Bond Level: Experimental and Interpretative Issues

There is increased interest in measuring kinetic rates, lifetimes, and rupture forces of single receptor/ligand bonds. Valuable insights have been obtained from previous experiments attempting such measurements. However, it remains difficult to know with sufficient certainty that single bonds were indeed measured. Using exemplifying data, evidence supporting single-bond observation is examined and caveats in the experimental design and data interpretation are identified. Critical issues preventing definitive proof and disproof of single-bond observation include complex binding schemes, multimeric interactions, clustering, and heterogeneous surfaces. It is concluded that no single criterion is sufficient to ensure that single bonds are actually observed. However, a cumulative body of evidence may provide reasonable confidence. 0 2002 Biomedical Engineering Society.

Experimental study on pore pressure in rock-soil slope during reservoir water level fluctuation

A test system was developed for measuring the pore pressure in porous media, and a new model was devised for the pore pressure testing in both saturated and unsaturated rock-soil. Laboratory experiments were carried out to determine the pore pressure during water level fluctuation. The variations of transient pore pressure vs. time at different locations of the simulated rock-soil system were acquired and processed, and meanwhile the deformation and failure of the model are observed. The experiment results show that whether the porous media are saturated or not, the transient pore pressure is mainly dependent on the water level fluctuation, and coupled with the variation of the stress field.

Mechanism Analysis of Landslide of a Layered Slope Induced by Drawdown of Water Level

The frequent drawdown of water level of Yangtze River will greatly influence the stability of the widely existing slopes in the Three Gorges reservoir zone, especially those layered ones. Apart from the fluctuating speed of water level, the different geological materials will also play important roles in the failure of slopes. Thus, it must be first to study the mechanism of such a landslide caused by drawdown of water level.A new experimental setup is designed to study the performance of a layered slope under the drawdown of water level. The pattern of landslide of a layered slope induced by drawdown of water level has been explored by means of simulating experiments. The influence of fluctuating speed of water level on the stability of the layered slope is probed,especially the whole process of deformation and development of landslide of the slope versus time. The experimental results show that the slope is stable during the water level rising, and the sliding body occurs in the upper layer of the slope under a certain drawdown speed of water level. In the process of slope failure, some new small sliding body will develop on the main sliding body, and the result is that they speed up the disassembly of the whole slope.Based on the simulating experiment on landslide of a layered slope induced by drawdown of water level, the stress and displacement field of the slope are calculated.The seepage velocity, the pore water pressure, and the gradient of pore water head are also calculated for the whole process of drawdown of water level. The computing results are in good agreement with the experimental results. Accordingly, the mechanism of deformation and landslide of the layered slope induced by drawdown of water level is analyzed. It may provide basis for treating this kind of layered slopes in practical engineering.

Influence of low-gravity level on crystal-growth in floating-zone

The influence of low gravity level on crystal growth in the floating zone, which involves thermocapillary convection, phase change convection, thermal and solutal diffusion, is investigated numerically by a finite element method for the silicon crystal growth process. The velocity, temperature, concentration fields and phase change interfaces depending on heating temperature and growth rates are analyzed. The influence of low gravity level on the concentration is studied especially. The results show that the non-uniformities of concentration are about 10(-3) for growth rate nu(p) = 5.12 x 10(-8) m/s, 10(-2) for nu(p) = 5.12 x 10(-7) m/s and relatively larger for larger growth rate in the gravity level g = 0-9.8 m/s2. The thermocapillary effect is strong in comparison with the Bridgman system, and the level of low gravity is relatively insensitive for lower growth rates.

High-Strength Composite Fibers: Realizing True Potential of Carbon Nanotubes in Polymer Matrix through Continuous Reticulate Architecture and Molecular Level Couplings

Carbon nanotubes have unprecedented mechanical properties as defect-free nanoscale building blocks, but their potential has not been fully realized in composite materials due to weakness at the interfaces. Here we demonstrate that through load-transfer-favored three-dimensional architecture and molecular level couplings with polymer chains, true potential of CNTs can be realized in composites as Initially envisioned. Composite fibers with reticulate nanotube architectures show order of magnitude improvement in strength compared to randomly dispersed short CNT reinforced composites reported before. The molecular level couplings between nanotubes and polymer chains results in drastic differences in the properties of thermoset and thermoplastic composite fibers, which indicate that conventional macroscopic composite theory falls to explain the overall hybrid behavior at nanoscale.