Effect of beta-irradiation on photoluminescence of MOCVD grown GaN

The effect of beta particles interaction on the optical properties of MOCVD grown GaN is reported. A significant change in luminescence properties of GaN is observed after exposing the material with 0.6 MeV beta particles with low dose of 10(12) cm(-2). The results obtained from photoluminescence measurements of irradiated GaN samples in low dose are found contradictory to those reported in literature for samples irradiated with heavy dose (> 10(15) cm(-2)) of electron. An increase in intensity of yellow luminescence has been observed with increasing dose of beta particles which is in disagreement to the already reported results in literature for heavily irradiated samples. A model has been proposed to sort out this inconsistency. The increase in YL intensity at low dose is attributed to the increase in concentration of VGaON complex whereas production of non-radiative VGaON clusters is assumed to justify the decrease in YL intensity at high dose.