133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

High power single transverse mode operation of a tapered large-mode-area fiber laser

To get high output power with good beam quality, a tapered section is introduced to large-mode-area (LMA) Yb-doped fiber laser. Output characteristics of the fiber laser without tapered section and with tapered section are compared experimentally. When the launched pump power is 119.1 W, 77.9 W with M-2 3.08 and 56.4 W with M-2 1.14 can be obtained, respectively. The corresponding slope efficiencies are 71.8% and 54.1%, respectively. Although output power of the tapered fiber laser has 30.6% penalty, brightness of it is as much as 5.28 times of the fiber laser without tapered section. Moreover, spectra of them are measured. It is found that tapered section makes lasing wavelength of the fiber laser shorter. (c) 2007 Elsevier B.V. All rights reserved.

Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area

Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.

Single-Mode Solid-Core Tellurite Glass Fiber with Large Mode Area and Low Loss for Infrared Applications

低损耗实芯碲酸盐光纤的非线性研究

Fabrication of 4 x 4 tapered MMI coupler with large cross section

MMI coupler with large cross section has low coupling loss between the device and fiber. However, large chip area is required. Recently proposed N x N tapered MMI coupler shows a substantial reduction in device geometry. No such kind of devices with N > 2 has yet been realized up to now. The authors have demonstrated a 4 x 4 parabolically tapered MMI coupler with large cross section that can match the SM fiber in silicon-on-insulator (SOI) technology. The device exhibits a minimum uniformity of 0.36 dB and excess loss of 3.7 dB, It represents a key component for realization of MMI-based silicon integrated optical circuit technology.

Nutrient Dynamics in the Upwelling Area of Changjiang (Yangtze River) Estuary

Nutrient dynamics and its influence on the distribution of chlorophyll-a in the upwelling area of the Changjiang (Yangtze) River estuary were investigated in the spring (May) and summer (August) of 2004. In the spring, upwelling was apparent in the region of 122 degrees 20'-123 degrees 00' E, 31 degrees 00'-32 degrees 00' N and was associated with low temperature (16-21 degrees C), high salinity (24-33 practical salinity units [psu]), and low dissolved oxygen (2.5-6.0 mg L-1) in the upper 10 m of the water column. The spring upwelling increased the mixed-layer phosphate, nitrate, and silicate concentrations to roughly 1, 15, and 15 mu mol L-1, respectively, and improved the light transparency in the euphotic zone. This improvement in phytoplankton growing conditions was followed by an increase in chlorophyll-a concentrations. The summer upwelling was weaker and occurred over a smaller geographical area (122 degrees 20'-123 degrees 00' E, 31 degrees 15'-31 degrees 50' N). Strongly influenced by turbid Changjiang diluted water (CDW), it had little impact on the upper 10 m of the water column but instead increased nutrient concentrations at greater depths. The high concentration of particulates in the CDW reduced light transmission in the upper 10 m and, hence, limited phytoplankton growth throughout the water column. Chlorophyll-a concentrations in the summer upwelling area were roughly an order of magnitude lower than in the spring. Water clarity, as influenced by the CDW, appears to be the principal factor limiting the impact of upwelling on phytoplankton biomass in this area.

Stiction and Anti-Stiction in Mems and Nems

Stiction in microelectromechanical systems (MEMS) has been a major failure mode ever since the advent of surface micromachining in the 80s of the last century due to large surface-area-to-volume ratio. Even now when solutions to this problem are emerging, such as self-assembled monolayer (SAM) and other measures, stiction remains one of the most catastrophic failure modes in MEMS. A review is presented in this paper on stiction and anti-stiction in MEMS and nanoelectromechanical systems (NEMS). First, some new experimental observations of stiction in radio frequency (RF) MEMS switch and micromachined accelerometers are presented. Second, some criteria for stiction of microstructures in MEMS and NEMS due to surface forces (such as capillary, electrostatic, van der Waals, Casimir forces, etc.) are reviewed. The influence of surface roughness and environmental conditions (relative humidity and temperature) on stiction are also discussed. As hydrophobic films, the self-assembled monolayers (SAMs) turn out able to prevent release-related stiction effectively. The anti-stiction of SAMs in MEMS is reviewed in the last part.

高功率光子晶体光纤激光器研究进展

光子晶体光纤的出现，为高功率光纤激光器的关键技术-大模区光纤的实现提供了新途径。基于铒镱共掺磷酸盐材料的包层掺杂新结构出现，为实现更加紧凑的光纤激光器提供了可能。常规高功率光纤激光器中的抽运技术，谐振腔技术和相干组束技术也在不断融入高功率光子晶体光纤激光器。高功率光子晶体光纤激光器的调Q和锁模输出也已经实现。

掺镱双包层光纤放大器的放大特性

从掺镱(Yb)光纤放大器的功率传输方程出发,利用有限差分法对小模场面积(SMA)和大模场面积(LMA)掺镱双包层光纤放大器的放大特性进行了分析比较。采用模场直径(MFD)6.5 μm和20 μm的双包层掺镱光纤作为放大器增益介质进行窄线宽连续信号的放大,在915 nm激光抽运下模拟计算了大、小模场面积输出功率随输入信号功率、抽运光功率和光纤长度的变化特性,特别是对于大模场面积光纤放大器,最优光纤长度的选择至关重要;讨论了模场直径不同时的最优抽运功率和光纤长度的选择,得出4 m光纤放大时的临界抽运功率为4