Ablation and ultrafast dynamics of zinc selenide under femtosecond laser irradiation

The ablation in zinc selenide (ZnSe) crystal is studied by using 150-fs, 800-nm laser system. The images of the ablation pit measured by scanning electronic microscope (SEM) show no thermal stress and melting dynamics. The threshold fluence is measured to be 0.7 J/cm2. The ultrafast ablation dynamics is studied by using pump and probe method. The result suggests that optical breakdown and ultrafast melting take place in ZnSe irradiated under femtosecond laser pulses.

Existence of the transverse relaxation time in optically excited bulk semiconductors

Two basic types of depolarization mechanisms, carrier-carrier (CC) and carrier-phonon (CP) scattering, are investigated in optically excited bulk semiconductors (3D), in which the existence of the transverse relaxation time is proven based on the vector property of the interband transition matrix elements. The dephasing rates for both CC and CP scattering are determined to be equal to one half of the total scattering-rate-integrals weighted by the factors (1 - cos chi), where chi are the scattering angles. Analytical expressions of the polarization dephasing due to CC scattering are established by using an uncertainty broadening approach, and analytical ones due to both the polar optical-phonon and non-polar deformation potential scattering (including inter-valley scattering) are also presented by using the sharp spectral functions in the dephasing rate calculations. These formulas, which reveal the trivial role of the Coulomb screening effect in the depolarization processes, are used to explain the experimental results at hand and provide a clear physical picture that is difficult to extract from numerical treatments.

A new type of boundary integral-equation for plane problems of elasticity including rotational forces

Based on the idea proposed by Hu [Scientia Sinica Series A XXX, 385-390 (1987)], a new type of boundary integral equation for plane problems of elasticity including rotational forces is derived and its boundary element formulation is presented. Numerical results for a rotating hollow disk are given to demonstrate the accuracy of the new type of boundary integral equation.

Magnetostatic relations including fluctuation fields - the local expansion

Using the approach of local expansion, we analyze the magnetostatic relations in the case of conventional turbulence. The turbulent relations are obtained consisten tly for themomentum equation and induction equation of both the average and fluctuation relations.In comparison with the magnetostatic relations as discussed usually, turbulent fluctuationfields produce forces, one of which 1/(4π)(α1×B0)×B0 may have parallel and perpendicular components in the direction of magnetic field, the other of which 1/(4π)K×B0 is introduced by the boundary value of turbulence and is perpendicular to the magnetic field. In the case of 2-dimensional configuration of magnetic field, the basic equation will be reduced into a second-order elliptic equation, which includes some linear and nonlinear terms introduced by turbulent fluctuation fields. Turbulent fields may change the configuration of magnetic field and even shear it non-uniformly. The study on the influence of turbulent fields is significant since they are observed in many astrophysical environments.

The magnetostatic relations including fluctuation fields

The influences of the fluctuation fields are important in many astrophysical environments as shown by the observations, and can not be neglected. On the basis of the first-order smoothing approximation, in the present paper, we demonstrate the magnetostatic equations for both the cases of the conventional turbulence aud the random waves, and discuss the consistent conditions of the equations. In the static problem, the fluctuation Lorentz force(▽×δB)×δB influences the large-scale configurations of magnetic field. To study this influence in detail is quite necessary for the explanations of the observation features, especially for the astrophysical environments where the magnetic fields, including the fluctuation fields, are the dominant factors in the equilibrium of momentum and energy.

Molecular phylogeny of the yuhinas (Sylviidae : Yuhina): a paraphyletic group of babblers including Zosterops and Philippine Stachyris

Mitochondrial sequences (2,379 bp) from cytochrome b, ND3, 12s and 16s rRNA were analyzed in order to reconstruct the phylogenetic relationships within the yuhinas (Yuhina), including the chestnut-faced babbler Stachyris whiteheadi which is endemic to the

Proposal for the direct optical detection of pure spin currents in semiconductors

We suggest a different practical scheme for the direct detection of pure spin current by using the two-color Faraday rotation of optical quantum interference process (QUIP) in a semiconductor system. We demonstrate theoretically that the Faraday rotation of QUIP depends sensitively on the spin orientation and wave vector of the carriers, and can be tuned by the relative phase and the polarization direction of the omega and 2 omega laser beams. By adjusting these parameters, the magnitude and direction of the spin current can be detected.

Mn-including InAs quantum dots fabricated by Mn implantation

Mn-including InAs quantum dots (QDs) were fabricated by Mn-ion implantation and subsequent annealing. The optical, compositional, and structural properties of the treated samples were analyzed by photoluminescence (PL) and microscopy. Energy dispersive X-ray (EDX) results indicate that Mn ions diffused from the bulk GaAs into the InAs QDs during annealing, and the diffusion appears to be driven by the strain in the InAs QDs. The temperature dependence of the PL of Mn-including InAs QD samples exhibits QDs PL characteristics. At the same time, the heavy Mn-including InAs QD samples have ferromagnetic properties and high T-c. (c) 2008 Elsevier B.V. All rights reserved.

Effects of coupling lens on optical refrigeration of semiconductors

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended.

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group IV, III-V, and II-VI semiconductor compounds, taking into account the deformation potential of the core states. This revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the "natural" unstrained offsets. Comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies.

Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

The origin of ferromagnetism in d(0) semiconductors is studied using first-principles methods with ZnO as a prototype material. We show that the presence of spontaneous magnetization in nitrides and oxides with sufficient holes is an intrinsic property of these first-row d(0) semiconductors and can be attributed to the localized nature of the 2p states of O and N. We find that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations. The quantum confinement effect also reduces the critical hole concentration to induce ferromagnetism in ZnO nanowires. The characteristic nonmonotonic spin couplings in these systems are explained in terms of the band coupling model.