A study on reduction behaviors of the supported platinum-iron catalysts

The reduction behaviors of the supported platinum-iron catalysts and their comparison with supported iron catalysts were studied by TPR (temperature-programmed reduction)-in situ Fe-57 MBS (Mossbauer spectroscopy). The results indicated that the TPR processes of all Fe-containing catalysts were different from that of bulk alpha-Fe2O3. There were interactions between Pt, Fe and the gamma-Al2O3 or SiO2 support for the Pt-Fe/gamma-Al2O3 and Pt-Fe/SiO2 catalysts. All the iron-containing catalysts show that Fe3+ was highly dispersed on the support (gamma-Al2O3 and SiO2) before reduction. No Fe-0 was found in the reduction processes. The Fe3+ was reduced to Fe2+ in tetrahedral vacancy first for the reduction of the Pt-Fe/gamma-Al2O3 catalyst. No Fe2+ in octahedral vacancy was found in the reduction of the Pt-Fe/SiO2 catalyst. Adding Pt to Fe/support (gamma-Al2O3 or SiO2) could promote the reduction of the Fe species. (C) 1999 Elsevier Science B.V. All rights reserved.

Mossbauer spectroscopy study of Fe-57 in R3Fe29-xTx (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)

Fe-57 Mossbauer spectra for the Fe atoms in the R3Fe29-xTx (R=Y, Ce, Nd, Sm, Gd, Tb, Dy; T=V, Cr) compounds were collected at 4.2 K. The analysis of Mossbauer spectra was based on the results of magnetization and neutron powder diffraction measurements. The average Fe magnetic moments at 4.2 K, deduced from our data, are in accord with magnetization measurements. The average hyperfine field of Tb3Fe29-xCrx (x=1.0, 1.5, 2.0, and 3.0) decreases with increasing Cr concentration, which is also in accordance with the variation of the average Fe magnetic moment in the Tb3Fe29-xCrx compounds.

Mossbauer spectroscopy study of Fe-57 in R3Fe29-xTx (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)

Fe-57 Mossbauer spectra for the Fe atoms in the R3Fe29-xTx (R=Y, Ce, Nd, Sm, Gd, Tb, Dy; T=V, Cr) compounds were collected at 4.2 K. The analysis of Mossbauer spectra was based on the results of magnetization and neutron powder diffraction measurements. The average Fe magnetic moments at 4.2 K, deduced from our data, are in accord with magnetization measurements. The average hyperfine field of Tb3Fe29-xCrx (x=1.0, 1.5, 2.0, and 3.0) decreases with increasing Cr concentration, which is also in accordance with the variation of the average Fe magnetic moment in the Tb3Fe29-xCrx compounds.

Adsorption and reaction of thiophene and H2S on Mo2C/Al2O3 catalyst studied by in situ FT-IR spectroscopy

The reactions of both thiophene and H2S onMo(2)C/Al2O3 catalyst have been studied by in situ FT-IR spectroscopy. CO adsorption was used to probe the surface sites of Mo2C/Al2O3 catalyst under the interaction and reaction of thiophene and H2S. When the fresh Mo2C/Al2O3 catalyst is treated with a thiophene/H-2 mixture above 473 K, hydrogenated species exhibiting IR bands in the regions 2800-3000 cm(-1) are produced on the surface, indicating that thiophene reacts with the fresh carbide catalyst at relatively low temperatures. IR spectra of adsorbed CO on fresh Mo2C/Al2O3 pretreated by thiophene/H-2 at different temperatures clearly reveal the gradual sulfidation of the carbide catalyst at temperatures higher than 473 K, while H2S/H-2 can sulfide the Mo2C/Al2O3 catalyst surface readily at room temperature (RT). The sulfidation of the carbide surface by the reaction with thiophene or H2S maybe the major cause of the deactivation of carbide catalysts in hydrotreating reactions. The surface of the sulfided carbide catalyst can be only partially regenerated by a recarburization using CH4/H-2 at 1033 K. When the catalyst is first oxidized and then recarburized, the carbide surface can be completely reproduced.

Mossbauer spectroscopy and chemical bonds in BaFe12O19 hexaferrite

Barium hexaferrite was synthesized by chemical co-precipitation. Its Mossbauer spectra were obtained. A semi-empirical model, based on the Phillips theory of bonding, has been developed for quantitative explanation of the Mossbauer isomer shifts of Fe ions in BaFe12O19 crystals. The results show that, using the relationship between isomer shifts and covalency, the site assignments in hexaferrites will be resolved easily. This paper provides a powerful tool for studying other members of the hexagonal ferrimagnetic oxides family.

Chemical bond properties and Mossbauer spectroscopy in (La1-xMx)(2)CuO4(M=Ba, Sr)

By using the average band-gap model, the chemical bond properties of (La1-x, M-x)(2)CuO4(M=Ba, Sr) were calculated. The calculated covalencies for Cu-O and La-O bond in the compounds are 0.3 and 0.03 respectively. Mossbauer isomer shifts of Fe-57 doped in La2CuO4 and Sn-119 doped in La2CuO4 were calculated by using the chemical surrounding factor defined by covalency and electronic polarizability. Four valence state tin and three valence iron sites were identified in Fe-57 and Sn-119 doped La2CuO4.

Chemical bond properties and Mossbauer spectroscopy in REBa2Cu3O7 (RE = Eu, Y)

By using the chemical bond theory of complex crystals, the chemical bond properties of REBa2Cu3O7 (RE = Eu, Y) were calculated. The calculated covalencies for Cu(1)-O and Cu(2)-O bond in REBa2Cu3O7 compounds are 0.41 and 0.28 respectively. Mossbauer isomer shifts of Fe-57 doped, and Sn-119 doped in REBa2Cu3O7-x were calculated by using the chemical environmental factor, h(e), defined by covalency and electronic polarizability. Four valence state tin ion and iron ion sites were identified in Fe-57 and Sn-119 doped REBa2Cu3O7-x superconductors.

The surface sites of sulfated zirconia studied in situ by laser-induced fluorescence spectroscopy

The surface sites of sulfated zirconia were investigated in situ by laser-induced fluorescence spectroscopy using aniline as the probe molecule. Different from the cases for many other oxides, the aniline adsorbed on the unique active sites of sulfated zirconia at r.t. is changed into another species, which emits a characteristic fluorescence band at 422 nm. The results illustrate that the sulfate groups in sulfated zirconia are favorable for the generation of these unique active sites, which also rarely exist on pure zirconia composed of tetragonal and monoclinic phases but do not exist on pure zirconia composed of monoclinic phase. (C) 2004 Elsevier B.V. All rights reserved.

Study on the thermal stability of InN by in-situ laser reflectance system

The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 degrees C in NH3 ambient. While in N-2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 degrees C, and the activation energy of InN decomposition was estimated to be 2.1 +/- 0.1 eV. Thermal stability of InN when annealing in NH3 ambient during temperature altering would be very sensitive to ramping rate and NH3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN. (c) 2005 Elsevier B.V. All rights reserved.

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.