337 resultados para hydrogen desorption

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1-xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)02109-X].

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The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.

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The discovery of the icosahedral phase (i-phase) in rapidly quenched Ti1.6V0.4Ni1-xCox (x=0.02-01) alloys is described herein. The i-phase occurs in a similar amount relative to the coexisting beta Ti phase. The electron diffraction patterns show the distinct spot anisotropy, indicating that the i-phase is metastable. The electrochemical hydrogen storage performance of these five alloy electrodes are also reported herein. The hydrogen desorption of nonelectrochemical recombination in the cyclic voltammetric (CV) response exhibits the demand for electrocatalytic activity improvement.

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Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.

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Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.

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Pt/AlGaN/AIN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and diode modes were compared. When the sensor was operated in the FET mode, the sensor can have larger current change of 8 mA, but its sensitivity is only about 0.2. In the diode mode, the current change was very small under the reverse bias but it increased greatly and gradually saturated at 0.8 mA under the forward bias. The sensor had much higher sensitivity when operated in the diode mode than in the FET mode. The oxygen in the air could accelerate the desorption of the hydrogen and the recovery of the sensor. (c) 2007 Elsevier Ltd. All rights reserved.

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Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300K is obtained at a fixed forward current after switching from N-2 to 10%H-2+N-2. The sensor responses under different concentrations from 50ppm H-2 to 10%H-2+N-2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N-2 and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated.

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A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process. (C) 2009 Elsevier B.V. All rights reserved.

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Cobalt boride precursors were synthesized via chemical reaction of aqueous sodium borohydride with cobalt chloride, and followed by heat-treating at various temperatures. The as-prepared Co-B catalysts were characterized and analyzed by X-ray diffraction (XRD), nitrogen adsorption-desorption and catalytic activity test; and were adopted to help accelerating hydrolysis reaction of NaBH4 alkaline solution. The Co-B catalyst treated at 500 degrees C exhibits the best catalytic activity, and achieves an average H, generation rate of 2970 ml/min/g, which may give a successive H, supply for a 481 W proton exchange membrane fuel cell (PEMFC) at 100% H-2 utilization. (c) 2005 Elsevier B.V. All rights reserved.

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Experimental investigations on the ignition and combustion stabilization of kerosene with pilot hydrogen in Mach 2.5 airflows were conducted using two test combustors, with cross sections of 30.5 x 30 and 51 x 70 mm, respectively. Various integrated modules, including the combinations of different pilot injection schemes and recessed cavity flameholders with different geometries, were designed and tested. The stagnation pressure of vitiated air varied within the range of 1.1-1.8 NiPa, while the stagnation temperature varied from 1500 to 1900 K. Specifically, effects of the pilot hydrogen injection scheme, cavity geometry, and combustor scaling on the minimally required pilot hydrogen equivalence ratio were systematically examined. Results indicated that the cavity depth and length had significant effects on the ignition and flameholding, whereas the slanted angle of the aft wall was relatively less important. Two cavities in tandem were shown to be a more effective flameholding mechanism than that with a single cavity. The minimally required pilot hydrogen equivalence ratio for kerosene ignition and stable combustion was found to be as low as 0.02. Furthermore, combustion efficiency of 80% was demonstrated to be achievable for kerosene with the simultaneous use of pilot hydrogen and a recessed cavity to promote the ignition and global burning.

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The interactive pair potential between Al and H is obtained based on the ab initio calculation and the Chen-Mobius 3D lattice inversion formula. By utilizing the pair potentials calculated, the effects of hydrogen on the dislocation emission from crack tip have been studied. The simulated result shows that hydrogen can reduce the cohesive strength for Al single crystal, and then the critical stress intensity factor for partial dislocation emission decreases from 0.11 MPa root m (C-H = 0) to 0.075 MPa root m (C-H=0.72%) and 0.06 MPa root m (C-H = 1.44%). This indicates thar hydrogen can enhance the dislocation emission. The simulation also shows that atoms of hydrogen can gather and turn into small bubbles, resulting in enhancement of the equilibrium vacancy concentration.

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Organised multilayers were formed from the controlled self-assembly of ferrocene alkyl thiols on Au(111) surfaces. The control was accomplished by increasing the concentration of the thiol solutions used for the assembly. Cyclic voltammetry, ellipsometry, scanning probe microscopy (STM and AFM) and in situ FTIR spectroscopy were used to probe the differences between mono- and multilayers of the same compounds. Electrochemical desorption studies confirmed that the multilayer structure is attached to the surface via one monolayer. The electrochemical behaviour of the multilayers indicated the presence of more than one controlling factor during the oxidation step, whereas the reduction was kinetically controlled which contrasts with the behaviour of monolayers, which exhibit kinetic control for the oxidation and reduction steps. Conventional and imaging ellipsometry confirmed that multilayers with well-defined increments in thickness could be produced. However, STM indicated that at the monolayer stage, the thiols used promote the mobility of Au atoms on the surface. It is very likely that the multilayer structure is held together through hydrogen bonding. To the best of out knowledge, this is the first example of a controlled one-step growth of multilayers of ferrocenyl alkyl thiols using self-assembly techniques.

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Self-ignition tests of a model scramjet combustor were conducted by using parallel sonic injection of gaseous hydrogen from the base of a blade-like strut into a supersonic vitiated airstream. The range of stagnation pressure and temperature studied varied from 1.0 to 4.5 MPa and from 1300 to 2200 K, respectively. Experimental results show that the self-ignition limit, in terms of either global or local quantities of pressure and temperature, exhibits a nonmonotonic behavior resembling the classical homogeneous explosion limit of the hydrogen-oxygen system. Specifically, for a given temperature, increasing pressure from a low value can render a nonignitable mixture to first become ignitable, then nonignitable again, This correspondence shows that, despite the globally supersonic nonpremixed configuration studied herein, ignition is strongly influenced by the intricate chemical reaction mechanism and thereby exhibits the homogeneous explosion character. Consequently, self-ignition criteria based on a global reaction rate approximating the complex chemistry are inadequate. An auxiliary computational study on counterflow ignition was also conducted to systematically investigate the contamination effects of vitiated air. Results indicate that the net contamination effects for the present experimental data are expected to be substantially smaller than contributions from the individual contamination species because of the counterbalancing influences of the H2O-inhibition and NO-promotion reactions in effecting ignition.