221 resultados para high charge state ion

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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A 320 kV high voltage (HV) platform has been constructed at Institute of Modern Physics (IMP) to satisfy the increasing requirements of experimental studies in some heavy ion associated directions. A high charge state all-permanent magnet ECRIS-LAPECR2 has been designed and fabricated to provide intense multiple charge state ion beams (such as 1000 e mu A O6+, 16.7 e mu A Ar14+, 24 e mu A Xe27+, etc.) for the HV platform. LAPECR2 has a dimension of 0 650 mm x 560 mm. The powerful 3D magnetic confinement to the ECR plasma and the optimum designed magnetic field for the operation at 14.5 GHz makes it possible to obtain very good performances from this source. After a brief introduction of the ECRIS and accelerator development at IMP, the conceptual design of LAPECR2 source is presented. The first test results of this all-permanent magnet ECRIS are given in this paper.

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Uranium ion beams were produced from electron cyclotron resonance (ECR) ion sources by sputtering method this year at the Institute of Modern Physics. At first, we chose the Lanzhou ECR No. 3 ion source to implement the production experiment of U ion beams. Finally, 11 e mu A of U28+, 5 e mu A of U32+, and 1.5 e mu A of U35+ were obtained. A U26+ ion beam produced by the LECR2 ion source was accelerated successfully by the cyclotron. This means that the Heavy Ion Research Facility in Lanzhou (HIRFL) has accomplished the acceleration of the ion beam of the heaviest element according to the designed parameters. The Lanzhou ECR ion source No. 2 (LECR2), which was built in 1997, has served the HIRFL for eight years and needed to be upgraded to provide more intense high charge state ion beams for HIRFL cooling storage ring. We started the upgrading project of LECR2 last year, and the modified design just has been finished. (c) 2006 American Institute of Physics.

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Electron Cyclotron Resonance (ECR) ion source is regarded as the most efficient machine to produce stable multiple charge state ion beams. Because of the special characteristics, all-permanent magnet ECR ion sources have been widely adopted around the world to produce stable ion beams of multiple charge state with good repetition have been widely adopted around the world to produce stable ion beams of multiple charge state with good repetition and high duty factor for compact research platforms and ion beam implanters. In this paper, all-permanent magnet ECR ion sources developed at IMP are presented, and typical parameters and performances are discussed. The high charge state source, LAPECR2, is mainly used to produce intense high charge state ion beams, and the LAPECR1 source is designed to produce intense ion beams of medium and low charge state. An improved LAPECR1-M is specially designed to produce heavy metal ion beams of low charge state. These ECR ion sources have been adopted by different experimental terminals at IMP and, with their nice performance, many experimental studies could be possible. 中文文摘:ECR(电子回旋共振)离子源是产生稳定的强流多电荷态离子束流最有效装置。全永磁ECR 离子源因其独特的特点为很多中小型多电荷态离子束流实验平台与离子注入机等系统所采用,为后者产生重复性好、稳定性强的多电荷态离子束流。本文着重论述了中国科学院近代物理研究所研制的几台全永磁多电荷态ECR 离子源及其特性与典型性能,如能产生强流高电荷态离子束流的高性能全永磁离子源LAPECR2,能产生强流中 低电荷态离子束流的LAPECR1,能产生多电荷态重金属离子束流的LAPECR1-M 等。这些性能稳定的离子源为提高近代物理研究所相关试验平台的性能提供了关键的束流品质保障。

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Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

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Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe2+, Fe3+ and Yb3+ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe3+ and Fe2+ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb3+ -> Yb2+ takes place in the process of gamma-irradiation. Oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe2+ -> Fe3+ and Yb2+ -> Yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 Elsevier B.V. All rights reserved.

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The Lanzhou All Permanent magnet ECR ion source NO. 1 (LAPECR1) is the first all permanent magnet multiple ECRIS made in IMP. This ECRIS is running at 14.5GHz and can provide intense low charge state ion beams (varying from several to hundreds of e mu A) or medium charge state ion beams (varying from several to tens of e mu A). The size of source body is circle divide 102mmx296mm, the compactness and economical features enable the source suitable to be put on a HV platform or equipped by a small laboratory. This article gives the main parameters of the ion source.

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The steady state ion acceleration at the front of a cold solid target by a circularly polarized flat-top laser pulse is studied with one-dimensional particle-in-cell (PIC) simulation. A model that ions are reflected by a steady laser-driven piston is used by comparing with the electrostatic shock acceleration. A stable profile with a double-flat-top structure in phase space forms after ions enter the undisturbed region of the target with a constant velocity. (C) 2007 Elsevier B.V. All rights reserved.

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Thermally stimulated redistribution and precipitation of excess arsenic in Ge0.5Si0.5 alloy has been studied by X-ray photoelectron spectroscopy (XPS), cross sectional transmission electron microscopy (XTEM) and X-ray energy disperse spectrometry (EDS). Samples were prepared by the implantation of 6 X 10(6) As+ cm(-2) and 100 keV with subsequent thermal processing at 800 degrees C and 1000 degrees C for 1 h. The XPS depth profiles from the implanted samples before and after the thermal annealing indicate that there is marked redistribution of the elements in heavily arsenic-implanted Ge0.5Si0.5 alloys during the annealing, including: (1) diffusion of As from the implanted region to the surface; (2) aggregation of Ge in the vicinity of the surface. A high density of precipitates was observed near the surface which were by XTEM and EDS identified as an arsenide. It is suggested that most of the implanted As in Ge0.5Si0.5 alloy exists in the form of GeAs.