Strain-Induced Grain Refinement of Cobalt During Surface Mechanical Attrition Treatment

The microstructural evolution during surface mechanical attrition treatment of cobalt (a mixture of hexagonal close packed (hep) and face-centered cubic (fcc) phases) was investigated. In order to reveal the mechanism of grain refinement and strain accommodation. The microstructure was systematically characterized by both cross-sectional and planar-view transmission electron microscopy. In the hcp phase, the process of grain refinement. Accompanied by an increase in strain imposed in the surface layer. Involved: (1) the onset of 110 111 deformation twinning, (2) the operation of (1 120) 110 1 0} prismatic and (1 120) (000 1) basal slip, leading to the formation of low-angle dislocation boundaries, and (3) the successive subdivision of grains to a finer and finer scale. Ressulting in the formation of highly misoriented nanocrystalline grains. Moreover. The formation of nanocrystalliies at the grain boundary and triple junction was also observed to occur concurrently with straining. By contrast. The fec phase accommodated strain in a sequence as follows: (1) slip of dislocations by forming intersecting planar arrays of dislocations, (2) {1 1 1} deformation twinning, and (3) the gamma(fcc) --> epsilon(hcp) martensitic phase transformation. The mechanism of grain refinement was interpreted in terms of the structural subdivision of grains together with dynamic recrystallization occurring in the hep phase and the gamma --> E: martensitic transformation in the fcc phase as well.

Dry sliding wear behavior of magnesium alloys

Dry sliding tests were performed on as-cast magnesium alloys Mg97Zn1Y2 and AZ91 using a pin-on-disc configuration. Coefficients of friction and wear rates were measured within a load range of 20-380 and 20-240 N at a sliding velocity of 0.785 m/s. X-ray differactometer, scanning electron microscopy, tensile testing machine were used to characterize the microstructures and mechanical properties of Mg97Zn1Y2 alloy and AZ91 alloy. Worn surface morphologies of Mg97Zn1Y2 and AZ91 were examined using scanning electron microscopy.

Extended application of edge-to-edge matching model to HCP/HCP (alpha-Mg/MgZn2) system in magnesium alloys

In the present work, the edge-to-edge matching model has been introduced to predict the orientation relationships (OR) between the MgZn2 phase which has hexagonal close packed (HCP) structure and the HCP a-Mg matrix. Based on the crystal structures and lattice parameters only, the model has predicted the two most preferred ORs and they are: (1) [1 1 2 3](alpha-Mg) vertical bar vertical bar]1 1 2 3](alpha-Mg), (0 0 0 1)(alpha-Mg) 0.27 degrees from (0 0 0 1)(MgZn2), (1 0 1 1)(alpha-Mg) 26.18 degrees from (1 1 2 2)(MgZn2), (2) [1 0 1 0](alpha-Mg),vertical bar vertical bar[1 1 2 0](MgZn2), (0 0 0 1)(alpha-Mg) vertical bar vertical bar(0 0 0 1)(MgZn2), (1 0 1 1)(alpha-Mg) 3.28 degrees from ( 1 1 2 2)(MgZn2). Four experimental ORs have been reported in the alpha-Mg/MgZn2 system, and the most frequently reported one is ideally the OR (2). The other three experimental ORs are near versions of the OR (2). The habit plane of the OR (2) has been predicted and it agrees well with the experimental results.

Grain Refinement at the Nanoscale Via Mechanical Twinning and Dislocation Interaction in a Nickel-Based Alloy

A nanostructured surface layer was formed on an Inconel 600 plate by subjecting it to surface mechanical attrition treatment at room temperature. Transmission electron microscopy and high-resolution transmission electron microscopy of the treated surface layer were carried out to reveal the underlying grain refinement mechanism. Experimental observations showed that the strain-induced nanocrystallization in the current sample occurred via formation of mechanical microtwins and subsequent interaction of the microtwins with dislocations in the surface layer. The development of high-density dislocation arrays inside the twin-matrix lamellae provides precursors for grain boundaries that subdivide the nanometer-thick lamellae into equiaxed, nanometer-sized grains with random orientations.

Refinement of edge-to-edge matching model and its application in the Mg17Al12/alpha-Mg and alpha-Y/alpha-Mg systems

A refined version of the edge-to-edge matching model is described here. In the original model, the matching directions were obtained from the planes with all the atomic centers that were exactly in the plane, or the distance from the atomic center to the plane which was less than the atomic radius. The direction-matching pairs were the match of straight rows-straight rows and zigzag rows-zigzag rows. In the refined model, the matching directions were obtained from the planes with all the atomic centers that were exactly in the plane.

The mechanical properties of magnesium matrix composites reinforced with 10 wt.% W14Al86 alloy particles

The Mg-based metal matrix composite reinforced by 10 wt.% W14Al86 alloy particles has been prepared by mechanical alloying and press-forming process. X-ray diffraction studies confirm the formation of the composite. Microstructure characterization of the samples reveals the uniform distribution of fine W14Al86 alloy. Mechanical properties characterization revealed that the reinforcement of W14Al86 alloy lead to a significant increase in hardness and tensile strength of Mg and AZ91.

Codoping of magnesium with oxygen in gallium nitride nanowires

Codoping of p-type GaN nanowires with Mg and oxygen was investigated using first-principles calculations. The Mg becomes a deep acceptor in GaN nanowires with high ionization energy due to the quantum confinement. The ionization energy of Mg doped GaN nanowires containing passivated Mg-O complex decreases with increasing the diameter, and reduces to 300 meV as the diameter of the GaN nanowire is larger than 2.01 nm, which indicates that Mg-O codoping is suitable for achieving p-type GaN nanowires with larger diameters. The codoping method to reduce the ionization energy can be effectively used in other semiconductor nanostructures. (C) 2010 American Institute of Physics.

Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition

The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that the ( 0002) peak of GaNP shifts to a smaller angle with increasing P content. From the GaNP photoluminescence (PL) spectra, the red shifts from the band-edge emission of GaN are determined to be 73, 78 and 100 meV, respectively, in the GaNP alloys with the P contents of 1.5%, 5.5% and 7.5%. No PL peak or XRD peak related to GaP is observed, indicating that phase separation induced by the short-range distribution of GaP-rich regions in the GaNP layer has been effectively suppressed. The phase-separation suppression in the GaNP layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of P atoms in the GaNP layer.

A study of the growth and optical properties of AlInGaN alloys

We have studied the growth and optical properties of AlInGaN alloys in this article. By the measurement of three samples, we found that the incorporation of In decreases with the increase of temperature, while there is nearly no change for the incorporation of Al. The sample grown at the lowest temperature had the best material and optical properties, which owes to the high In component, because the In component can reduce defects and improve the material quality. We also used the time-resolved photoluminescence(PL) to study the mechanism of recombination of carriers, and found that the time dependence of PL intensity was not in exponential decay, but in stretched-exponential decay. Through the study of the character of this decay, we come to the conclusion that the emission comes from the recombination of localized excitons. Once more, this localization exhibites the character of quantum dots, and the stretched, exponential decay results from the hopping of carriers between different localized states. In addition, we have used the relation of emission energy dependence of carrier's lifetime and the character of radiative recombination and non-radiative combination to confirm our conclusion.

Time-resolved photoluminescence studies of AlInGaN alloys

We study the two samples of AIInGaN, i.e., 1-mum GaN grown at 1030degreesC on the buffer and followed by a 0.6-mum-thick epilayer of AIInGaN under the low pressure of 76 Torr and the AIInGaN layer deposited directly on the buffer layer without the high-temperature GaN layer, by temperature-dependent photoluminescence (PL) spectroscopy and picosecond time-resolved photoluminescence (TRPL) spectroscopy. The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures, indicating significant disorder in the material. We attribute the disorder to nanoscale quantum dots or discs of high indium concentration. Temperature dependence of dispersive exponent beta shows that the stretched exponential decay of the two samples comes from different mechanisms. The different depths of the localization potential account for the difference, which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.

Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors

The GaNAs alloys have been grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHv) as the nitrogen precursor, triethylgallium (TEGa) and trimethylgallium (TMGa) as the gallium precursors, respectively. Both symmetric (004) and asymmetric (1 1 5) high-resolution X-ray diffraction (HRXRD) were used to determine the nitrogen content in GaNAs layers. Secondary ion mass spectrometry (SIMS) was used to obtain the impurity content. T e influence of different Ga precursors on GaNAs quality has been investigated. Phase separation is observed in the < 1 1 5 > direction when using TMGa as the Ga precursor but not observed when using TEGa. This phenomenon should originate from the parasitic reaction between the Ga and N precursors. Furthermore. samples grown with TEGa have better quality and less impurity contamination than those with TMGa. Nitrogen content of 5.742% has been achieved using TEGa and no phase separation observed in the sample. (C) 2002 Elsevier Science B.V. All rights reserved.

Formal specification and refinement of a safe train control function

Motivated by the design and development challenges of the BART case study, an approach for developing and analyzing a formal model for reactive systems is presented. The approach makes use of a domain specific language for specifying control algorithms able to satisfy competing properties such as safety and optimality. The domain language, called SPC, offers several key abstractions such as the state, the profile, and the constraint to facilitate problem specification. Using a high-level program transformation system such as HATS being developed at the University of Nebraska at Omaha, specifications in this modelling language can be transformed to ML code. The resulting executable specification can be further refined by applying generic transformations to the abstractions provided by the domain language. Problem dependent transformations utilizing the domain specific knowledge and properties may also be applied. The result is a significantly more efficient implementation which can be used for simulation and gaining deeper insight into design decisions and various control policies. The correctness of transformations can be established using a rewrite-rule based induction theorem prover Rewrite Rule Laboratory developed at the University of New Mexico.