CHARACTERIZATION OF HIGH FLUENCE NEUTRON-INDUCED DEFECT LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS USING A LASER DEEP-LEVEL TRANSIENT SPECTROSCOPY (L-DLTS)

Neutron irradiated high resistivity (4-6 kOMEGA-cm) silicon detectors in the neutron fluence (PHI(n)) range of 5 X 10(11) n/cm2 to 1 X 10(14) n/cm2 have been studied using a laser deep level transient spectroscopy (L-DLTS). It has been found that the A-center (oxygen-vacancy, E(c) = 0.17 eV) concentration increases with neutron fluence, reaching a maximum at PHI(n) almost-equal-to 5 X 10(12) n/cm2 before decreasing with PHI(n). A broad peak has been found between 200 K and 300 K, which is the result of the overlap of three single levels: the V-V- (E(c) = 0.38 eV), the E-center (P-V, E(c) = 0.44 eV), and a level at E(c) = 0.56 eV that is probably V-V0. At low neutron fluences (PHI(n) < 5 X 10(12) n/cm2), this broad peak is dominated by V-V- and the E-centers. However, as the fluence increases (PHI(n) greater-than-or-equal-to 5 X 10(12) n/cm2), the peak becomes dominated by the level of E(c) = 0.56 eV.

Anisotropic Deformation Of Polystyrene Particles By Mev Au Ion Irradiation

MeV An irradiation leads to a shape change of polystyrene (PS) and SiO2 particles from spherical to ellipsoidal, with an aspect ratio that can be precisely controlled by the ion fluence. Sub-micrometer PS and SiO2 particles were deposited on copper substrates and irradiated with Au ions at 230 K, using an ion energy and fluence ranging from 2 to 10 MeV and 1 x 10(14) ions/cm(2) to 1 x 10(15) ions/cm(2). The mechanisms of anisotropic deformation of PS and SiO2 particles are different because of their distinct physical and chemical properties. At the start of irradiation, the volume of PS particles decrease, then the aspect ratio increases with fluence, whereas for SiO2 particles the volume remains constant. (C) 2008 Elsevier B.V. All rights reserved.

Ablation and ultrafast dynamics of zinc selenide under femtosecond laser irradiation

The ablation in zinc selenide (ZnSe) crystal is studied by using 150-fs, 800-nm laser system. The images of the ablation pit measured by scanning electronic microscope (SEM) show no thermal stress and melting dynamics. The threshold fluence is measured to be 0.7 J/cm2. The ultrafast ablation dynamics is studied by using pump and probe method. The result suggests that optical breakdown and ultrafast melting take place in ZnSe irradiated under femtosecond laser pulses.

超短脉冲照射下氟化锂的烧蚀机理及其超快动力学研究

研究了超短脉冲激光照射下LiF晶体的破坏机理及其超快动力学过程，利用扫描电镜和原子力显微镜等测试手段，观测了飞秒激光照射下LiF晶体的烧蚀形貌。利用烧蚀面积与激光脉冲能量的对数关系确定了LiF晶体的破坏阈值，并利用非线性玻璃棒展宽脉宽，得到了800nm激光作用下LiF破坏阈值对激光脉宽（50～1000fs）的依赖关系；利用抽运一探针超快探测平台，探测了LiF烧蚀过程中反射率的变化。采用雪崩击穿模型，并根据晶体材料反射率与材料的介电常量的依赖关系，通过数值计算，模拟了材料烧蚀阈值与脉宽的依赖关系及材料激发过

Formation mechanism of self-organized voids in dielectrics induced by tightly focused femtosecond laser pulses

In this paper, we briefly summarize two typical morphology characteristics of the self-organized void array induced in bulk of fused silica glass by a tightly focused femtosecond laser beam, such as the key role of high numerical aperture in the void array formation and the concentric-circle-like structure indicated by the top view of the void array. By adopting a physical model which combines the nonlinear propagation of femtosecond laser pulses with the spherical aberration effect (SA) at the interface of two mediums of different refractive indices, reasonable agreements between the simulation results and the experimental results are obtained. By comparing the fluence distributions of the case with both SA and nonlinear effects included and the case with only consideration of SA, we suggest that spherical aberration, which results from the refractive index mismatch between air and fused silica glass, is the main reason for the formation of the self-organized void array. (c) 2008 American Institute of Physics.

Optical breakdown of 6H SiC induced by wavelength-tunable femtosecond laser pulses

The damage mechanisms and micromachining of 6H SiC are studied by using femtosecond laser pulses at wavelengths between near infrared (NIR) and near ultraviolet (NUV) delivered from an optical parametric amplifier (OPA). Our experimental results indicate that high quality microstructures can be fabricated in SiC crystals. On the basis of the dependence of the ablated area and the laser pulse energy, the threshold fluence of SiC is found to increase with the incident laser wavelength in the visible region, while it remains almost constant for the NIR laser. For the NIR laser pulses, both photoionization and impact ionization play important roles in electronic excitation, while for visible lasers, photoionization plays a more important role.

Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF2 crystals

The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength lambda in the region of 250-800 nm, while it is nearly a constant for 800

Enhancement of Kerr nonlinearity with vanishing absorption in a tripod scheme

The giant enhancement of Kerr nonlinearity in a four-level tripod type system is investigated theoretically. By tuning the value of the Rabi frequency of the coherent control field, owing to the double dark resonances, the giant-enhanced Kerr nonlinearity can be achieved within the right transparency window. The in fluence of Doppler broadening is also discussed.

Distribution of the microcrystallites generated in borate glass irradiated by femtosecond laser pulses

This paper deals with the distribution of generated microcrystallites in borate glass irradiated by 120 fs laser pulses at a central wavelength of 800 nm. Raman spectroscopy is used to investigate the distribution of the high and low temperature phases of barium metaborate crystals generated in the borate glass. In combination with a microexplosion model, bond-breaking induced by laser irradiation is served as the origin of the formation of BBO crystals. Depending on the laser fluence and cooling conditions, the distribution mechanisms have been discussed. (c) 2006 Elsevier B.V. All rights reserved.

激光脉冲放大器的增益通量曲线研究

提出利用放大器的增益通量曲线来全面描述放大器增益特性的方法．并对单台放大器的增益通量曲线进行了研究，从而进一步加深了对放大器的认识．为功率平衡研究提供有力工具．

Crystallization of amorphous Ge2Sb2Te5 films induced by a single femtosecond laser pulse

Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the ferntosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs. (C) 2004 Elsevier Ltd. All rights reserved.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Numerical and experimental analysis on green laser crystallization of amorphous silicon thin films

The effect of laser fluence on the crystallization of amorphous silicon irradiated by a frequency-doubled Nd:YAG laser is studied both theoretically and experimentally. An effective numerical model is set up to predict the melting threshold and the optimized laser fluence for the crystallization of 200-nm-thick amorphous silicon. The variation of the temperature distribution with time and the melt depth is analyzed. Besides the model, the Raman spectra of thin films treated with different fluences are measured to confirm the phase transition and to determine the optimized fluence. The calculating results accord well with those obtained from the experimental data in this research. (C) 2008 Elsevier Ltd. All rights reserved.

Laser conditioning of ZrO2 : Y2O3/SiO2 mirror coatings prepared by E-beam evaporation

Laser conditioning effects of the dielectric mirror coatings with different designs were investigated. Simple quarter-wave ZrO2:Y2O3/SiO2 mirrors and half-wave SiO2 over-coated ZrO2:Y2O3/SiO2 mirror coatings were fabricated by E-beam evaporation (EBE). The absorbance of the samples before and after laser conditioning was measured by surface thermal lensing (STL) technology and the defects density was detected under Nomarski microscope. The enhancement of the laser damage resistance was found after laser conditioning. The dependence of the laser conditioning on the coating design was also observed and the over-coated sample obtained greatest enhancement, whereas the absorbance of the samples did not change obviously. During the sub-threshold fluence raster scanning, the minor damage about defects size was found and the assumption of pre-damage mechanism, based on the functional damage concept, was put forward. The improvement of the laser induced damage threshold (LIDT) was attributed to the benign damage of the defects and the dependence on the coating design owed to the damage growth behavior of different coating designs. (C) 2004 Elsevier B.V. All rights reserved.