Effects of Graphitization on the Synthesis of Ultrafine Diamond by Explosive Detonation

金刚石的石墨化对于炸药爆轰过程中金刚石的产出率有重要的影响。对碳相图进行了讨论,提出采用金刚石2石墨的动力学平衡线来评价炸药爆轰过程中金刚石的石墨化。通过数值模拟,对炸药爆轰过程中金刚石的石墨化进行了分析和讨论。

Explosive consolidation of amorphous cobalt-based alloys

This paper addresses the explosive consolidation of amorphous cobalt-based alloys. Using the experimental setup introduced in the present paper, specimens with high compact density, excellent magnetic properties and great wearability have been made. In comparison with permalloy and ferrite, the present specimens exhibit superior magnetic properties. Therefore, the compact is deemed as being a promising material for magnetic recording heads.

Non-die explosive forming of spherical pressure-vessels

This paper presents a newly developed method of manufacturing spherical pressure vessels based on the technology of non-die explosive forming. Compared with the traditional method, this technology does not need any dies and pressing equipment, so that the cost of the production process can be greatly reduced, especially for vessels of less than 100 m3 capacity.

A study of the mechanism of consolidating metal-powder under explosive-implosive shock-waves

A study of the two-dimensional flow pattern of particles in consolidation process under explosive-implosive shock waves has been performed to further understand the mechanism of shock-wave consolidation of metal powder, in which bunched low-carbon steel wires were used instead of powder. Pressure in the compact ranges from 6 to 30 GPa. Some wires were electroplated with brass, some pickled. By this means, the flow pattern at particle surfaces was observed. The interparticle bonding and microstructure have been investigated systematically for the consolidated specimens by means of optical and electron microscopy, as well as by microhardness. The experimental results presented here are qualitatively consistent with Williamson's numerical simulation result when particle arrangement is close packed, but yield more extensive information. The effect of surface condition of particle on consolidation quality was also studied in order to explore ways of increasing the strength of the compacts. Based on these experiments, a physical model for metal powder shock consolidation has been established.

Failure process analysis of cement under explosive loading with a generalized driven nonlinear threshold model

The microstructural heterogeneity and stress fluctuation play important roles in the failure process of brittle materials. In this paper, a generalized driven nonlinear threshold model with stress fluctuation is presented to study the effects of microstructural heterogeneity on continuum damage evolution. As an illustration, the failure process of cement material under explosive loading is analyzed using the model. The result agrees well with the experimental one, which proves the efficiency of the model.

Influence of phosphate precursors on the structures of sodium aluminophosphate sols, gels and glasses

Transparent and homogeneous aluminophosphate gels and glasses have been widely synthesized through an aqueous sol-gel route, extending significantly the glass-forming range compared to that accessible via the melt-cooling route. Different phosphorus precursors, sodium polyphosphate (NaPO3) and orthophosphate species (NaH2PO4 and/or H3PO4) were compared with regard to the macroscopic properties and the microscopic structure of the resultant gels and glasses as characterized by extensive high-resolution liquid- and solid-state NMR. Sodium polyphosphate solution results in a substantially wider composition range of homogenous gel formation than orthophosphate solutions, and the two routes produce significant structural differences in the sol and xerogel states. Nevertheless, the structures of the glasses obtained upon gel annealing above 400 degrees C are independent of the P-precursors used. (c) 2007 Elsevier B.V. All rights reserved.

A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors

Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors

The GaNAs alloys have been grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHv) as the nitrogen precursor, triethylgallium (TEGa) and trimethylgallium (TMGa) as the gallium precursors, respectively. Both symmetric (004) and asymmetric (1 1 5) high-resolution X-ray diffraction (HRXRD) were used to determine the nitrogen content in GaNAs layers. Secondary ion mass spectrometry (SIMS) was used to obtain the impurity content. T e influence of different Ga precursors on GaNAs quality has been investigated. Phase separation is observed in the < 1 1 5 > direction when using TMGa as the Ga precursor but not observed when using TEGa. This phenomenon should originate from the parasitic reaction between the Ga and N precursors. Furthermore. samples grown with TEGa have better quality and less impurity contamination than those with TMGa. Nitrogen content of 5.742% has been achieved using TEGa and no phase separation observed in the sample. (C) 2002 Elsevier Science B.V. All rights reserved.

CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS

The growth of high quality AlGaAs by CBE bas been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1-xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.