Fast evolution of growth hormone receptor in primates and ruminants

Pituitary growth hormone (GH) evolves very slowly in most of mammals, but the evolutionary rates appear to have increased markedly on two occasions during the evolution of primates and ruminants. To investigate the evolutionary pattern of growth hormone receptor (GHR), we sequenced the extracellular domain of GHR genes from four primate species. Our results suggested that GHR in mammal also shows an episodic evolutionary pattern, which is consistent with that observed in pituitary growth hormone. Further analysis suggested that this pattern of rapid evolution observed in primates and ruminants is likely the result of coevolution between pituitary growth hormone and its receptor.

Molecular evolution of growth hormone gene family in old world monkeys and hominoids

Growth hormone is a classic molecule in the study of the molecular clock hypothesis as it exhibits a relatively constant rate of evolution in most mammalian orders except primates and artiodactyls, where dramatically enhanced rate of evolution (25-50-fold) has been reported. The rapid evolution of primate growth hormone occurred after the divergence of tarsiers and simians, but before the separation of old world monkeys (OWM) from new world monkeys (NWM). Interestingly, this event of rapid sequence evolution coincided with multiple duplications of the growth hormone gene, suggesting gene duplication as a possible cause of the accelerated sequence evolution. Here we determined 21 different GH-like sequences from four species of OWM and hominoids. Combining with published sequences from OWM and hominoids, our analysis demonstrates that multiple gene duplications and several gene conversion events both occurred in the evolutionary history of this gene family in OWM/hominoids. The episode of recent duplications of CSH-like genes in gibbon is accompanied with rapid sequence evolution likely resulting from relaxation of purifying selection. GHN genes in both hominoids and OWM are under strong purifying selection. In contrast, CSH genes in both lineages are probably not. GHV genes in OWM and hominoids evolved at different evolutionary rates and underwent different selective constraints. Our results disclosed the complex history of the primate growth hormone gene family and raised intriguing questions on the consequences of these evolutionary events. © 2005 Elsevier B.V. All rights reserved.

Statistical formulation and experimental determination of growth rate of micrometre cracks under impact loading

A new statistical formulation and a relevant experimental approach to determine the growth rate of microcracks were proposed. The method consists of experimental measurements and a statistical analysis' on the basis of the conservation law of number density of microcracks in phase space. As a practical example of the method, the growth rate of microcracks appearing in an aluminium alloy subjected to planar impact loading was determined to be ca. 10 mu m/mu s under a tensile stress of 1470 MPa and load duration between 0.26 mu s and 0.80 mu s.

Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on alpha-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Epitaxial growth of InN on GaN(0001) by plasma-assisted molecular-beam epitaxy is investigated over a range of growth parameters including source flux and substrate temperature. Combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM), we establish a relationship between film growth mode and the deposition condition. Both two-dimensional (2D) and three-dimensional (3D) growth modes of the film are observed. For 2D growth, sustained RHEED intensity oscillations are recorded while STM reveals 2D nucleation islands. For 3D growth, less than three oscillation periods are observed indicating the Stranski-Krastanov (SK) growth mode of the film. Simultaneous measurements of (reciprocal) lattice constant by RHEED suggest a gradual relaxation of the strain in film, which commences during the first bilayer (BL) deposition and almost completes after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations, so the islands are likely strain free. (C) 2002 American Institute of Physics.

Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

The effects of gravity and crystal orientation on the dissolution of GaSb into InSb melt and the recrystallization of InGaSb were investigated under microgravity condition using a Chinese recoverable satellite and under normal gravity condition on earth. To investigate the effect of gravity on the solid/liquid interface and compositional profiles. a numerical simulation was carried out. The InSb crystal melted at 525 degrees C and then a part of GaSb dissolved into the InSb melt during heating to 706 degrees C and this process led to the formation of InGaSb solution. InGaSb solidified during the cooling process. The experimental and calculation results clearly show that the shape of the solid/liquid interface and compositional profiles in the solution were significantly affected by gravity. Under microgravity, as the Ga compositional profiles were uniform in the radial direction. the interfaces were almost parallel. On the contrary, for normal gravity condition, as large amounts of Ga moved up in the upper region due to buoyancy, the dissolved zone broadened towards gravitational direction. Also. during the cooling process, needle crystals of InGaSb started appearing and the value of x of InxGa1-xSb crystals increased with the decrease of temperature. The GaSb with the (111)B plane dissolved into the InSb melt much more than that of the (111)A plane. (C) 2000 Elsevier Science B.V. All rights reserved.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

Effect of growth interruption on the optical properties of InAs/GaAs quantum dots

The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was investigated by cw and time-resolved photoluminescence (PL). It is found that this effect depends very much on the growth conditions, in particular, the growth rate. In the case of low growth rate, we have found that the GI may introduce either red-shift or blue-shift in PL with increase of the interruption lime, depending on the InAs thickness. The observed red shift in our 1.7 monolayer (ML) sample is attributed to the evolution of the InAs islands during the growth interruption. While the blue-shift in the 3 ML sample is suggested to be mainly caused by the strain effect. In addition, nearly zero shift was observed for the sample with thickness around 2.5 ML, (C) 1999 Elsevier Science Ltd. All rights reserved.

In Situ Observation of Tensile Deformation Processes of Soft Colloidal Crystalline Latex Fibers

The deformation mechanism or styrene/n-butyl acrylate copolymer latex films with fiber symmetric crystalline structure subjected to uniaxial stretching was studied using synchrotron small-angle X-ray scattering technique. The fibers were drawn at angles or 0, 35, and 55 degrees with respect to the Fiber axis. In all cases, the microscopic deformation within the crystallites was Found to deviate from affine deformation behavior with respect to the macroscopic deformation ratio. Moreover, the extent of this deviation is different in the three cases. This peculiar behavior can be attributed to the relative orientation of the (111) plane of the crystals, the plane of densest packing, with respect to the stretching direction in each case. When the stretching direction coincides with the crystallographic (111) plane, which is the case for stretching directions of 0 and 55 degrees with respect to the fiber axis, the microscopic deformation deviates less from affine behavior than when the stretching direction is arbitrarily oriented with respect to the crystallographic (111) plan.

Study of beta-alpha recrystallization of the polypropylene

The crystalline modifications alpha and beta of polypropylene (PP) were studied by using polarized light microscopy (PLM), wide-angle X-ray diffraction (WAXD), and differential scanning calorimetry (DSC). Typically beta crystals surrounded by alpha spherulites were observed at low temperature. With increasing temperature the beta crystals melted and a new crystal appeared. More interestingly, the melting temperature of the new crystal was about 5degrees higher than that of alpha spherulites originally present in the sample formed isothermally. It was assumed that this new crystal was the recrystalline alpha crystal. This assumption was supported by the DSC results. Furthermore, the crystallization kinetics of the PP used was studied on the basis of the traditional Avrami analysis. As a result, the Avrami exponents of crystallization temperature from 120 to 130degreesC ranged between 4.21 and 3.60, indicating that the crystallization mechanism of PP order melt was spherulitic growth and random nucleation.

Surface plasmon resonance studies on the electrochemical doping/dedoping processes of anions on polyaniline-modified electrode

The combination of in situ surface plasmon resonance (SPR) with electrochemistry was used to investigate the electrochemical doping/dedoping processes of anions on a polyaniline (PAn)-modified electrode. Electrochemical SPR characteristics of the PAn film before and after doping/dedoping were revealed. The redox transformation between the insulating leucoemeraldine, and the conductive emeraldine, corresponding to the doping/dedoping of anion, can lead to very distinct changes in both the resonance minimum angle and the shape of SPR curve. This is ascribed to the swelling/shrinking effect, and the change of the PAn film in the imaginary part of the dielectric constant resulted from the transition of the film conductivity. In situ recording the time evolution of reflectance change at a fixed angle permits the continuous monitoring of the kinetic processes of doping/dedoping anions. The size and the charge of anions, the film thickness, as well as the concentration of anions are shown to strongly influence the rate of ingress/egress of anions. The time differential of SPR kinetic curves can be well applied in the detecting electroinactive anion by flow injection analysis. The approach has higher sensitivity and reproducibility compared with other kinetic measurements, such as those obtained by amperometry.

Mixed ion transfer analysis in redox processes of electroactive thin films

Electrochemical quartz crystal microbalance (EQCM) technique was used to measure the ion transfer in redox processes in electroactive organic thin films, such as self-assembled monolayer (SAM) (4-pyridyl hydroquinone, abbr. 4PHQ), multilayer based on SAM and conducting polymer film (here poly-(3,4-ethylenedioxythiophene), abbr. PEDOT). A mechanism of mixed ion transfer is developed and presented. Analysis of mixed ion transfer during redox processes successfully elucidates the deviation of oscillation frequency of the quartz crystal from theoretical expectation.

Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure

The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed.

Study of Growth Mechanism of Lysozyme Crystal by Batch Crystallization Method

The lysozyme crystals were made by batch crystallization method and the distribution of aggregate in solution were measured by dynamic light scattering. The results showed that the dimension of aggregate increased with the increase of the concentration of lysozyme and NaCl, lysozyme molecules aggregated gradually in solution and finally arrived at balance each other. The higher the concentrations of lysozyme and NaCl were, the faster the growth rate of (I 10) face was. The growth rates of lysozyme crystal were obtained by a Zeiss microscope, and the effective surface energy (a) of growing steps were calculated about 4.01 X 10(-8) J.cm(-2) according to the model of multiple two-dimensional nucleation mechanism.

Threshold diversity and trans-scales sensitivity in a finite nonlinear evolution model of materials failure

We present a slice-sampling method and study the ensemble evolution of a large finite nonlinear system in order to model materials failure. There is a transitional region of failure probability. Its size effect is expressed by a slowly decaying scaling law. In a meso-macroscopic range (similar to 10(5)) in realistic failure, the diversity cannot be ignored. Sensitivity to mesoscopic details governs the phenomena. (C) 1997 Published by Elsevier Science B.V.