27 resultados para elliptic curve

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Following the idea of Xing et al., we investigate a general method for constructing families of pseudorandom sequences with low correlation and large linear complexity from elliptic curves over finite fields in this correspondence. With the help of the tool of exponential sums on elliptic curves, we study their periods, linear complexities, linear complexity profiles, distributions of r-patterns, periodic correlation, partial period distributions, and aperiodic correlation in detail. The results show that they have nice randomness.

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在一个安全的代理签名方案中,只有指定的代理签名人能够代表原始签名人生成代理签名.基于椭圆曲线离散对数问题,纪家慧和李大兴提出了一个代理签名方案和一个代理多签名方案,陈泽雄等人给出了另外两个代理多签名方案.但是,在他们的方案中,原始签名人能够伪造代理签名私钥.为了抵抗原始签名人的伪造攻击,改进了代理签名密钥的生成过程,并对改进的方案进行了安全性分析.

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椭圆曲线密码算法作为高安全性的公钥密码;ECC算法的优化和软硬件实现是当前的研究热点;采用硬件实现椭圆曲线密码算法具有速度快、安全性高的特点,随着功耗分析、旁路攻击等新型分析方法的发展,密码算法硬件实现中的低功耗设计越来越重要;针对椭圆曲线密码算法的特点,主要对该算法芯片设计中的低功耗设计方法进行探讨。

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本文通过形状约束方程(组)与一般主动轮廓模型结合,将目标形状与主动轮廓模型融合到统一能量泛函模型中,提出了一种形状保持主动轮廓模型即曲线在演化过程中保持为某一类特定形状。模型通过参数化水平集函数的零水平集控制演化曲线形状,不仅达到了分割即目标的目的,而且能够给出特定目标的定量描述。根据形状保持主动轮廓模型,建立了一个用于椭圆状目标检测的统一能量泛函模型,导出了相应的Euler-Lagrange常微分方程并用水平集方法实现了椭圆状目标检测。此模型可以应用于眼底乳头分割,虹膜检测及相机标定。实验结果表明,此模型不仅能够准确的检测出给定图像中的椭圆状目标,而且有很强的抗噪、抗变形及遮挡性能。

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Four types of the fundamental complex potential in antiplane elasticity are introduced: (a) a point dislocation, (b) a concentrated force, (c) a dislocation doublet and (d) a concentrated force doublet. It is proven that if the axis of the concentrated force doublet is perpendicular to the direction of the dislocation doublet, the relevant complex potentials are equivalent. Using the obtained complex potentials, a singular integral equation for the curve crack problem is introduced. Some particular features of the obtained singular integral equation are discussed, and numerical solutions and examples are given.

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The two-dimensional problem of a thermopiezoelectric material containing an elliptic inclusion or a hole subjected to a remote uniform heat flow is studied. Based on the extended Lekhnitskii formulation for thermopiezoelectricity, conformal mapping and Laurent series expansion, the explicit and closed-form solutions are obtained both inside and outside the inclusion (or hole). For a hole problem, the exact electric boundary conditions on the hole surface are used. The results show that the electroelastic fields inside the inclusion or the electric field inside the hole are linear functions of the coordinates. When the elliptic hole degenerates into a slit crack, the electroelastic fields and the intensity factors are obtained. The effect of the heat how direction and the dielectric constant of air inside the crack on the thermal electroelastic fields are discussed. Comparison is made with two special cases of which the closed solutions exist and it is shown that our results are valid.

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This paper presents a method for the calculation of two-dimensional elastic fields in a solid containing any number of inhomogeneities under arbitrary far field loadings. The method called 'pseudo-dislocations method', is illustrated for the solution of interacting elliptic inhomogeneities. It reduces the interacting inhomogeneities problem to a set of linear algebraic equations. Numerical results are presented for a variety of elliptic inhomogeneity arrangements, including the special cases of elliptic holes, cracks and circular inhomogeneities. All these complicated problems can be solved with high accuracy and efficiency.

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It is demonstrated that the primary instability of the wake of a two-dimensional circular cylinder rotating with constant angular velocity can be qualitatively well described by the Landau equation. The coefficients of the Landau equation are determined by means of numerical simulations for the Navier-Stokes equations. The critical Reynolds numbers, which depend on the angular velocity of the cylinder, are evaluated correctly by linear regression. (C) 2004 American Institute of Physics.

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Resonant cavity modes in a torus with elliptical cross section are studied by means of a direct variational method. The nonlinear effects of toroidicity and ellipticity on the frequency of the basic mode are analyzed simply and systematically without the restriction of linear theory. It is shown that the toroidicity effect on the m = 0 transverse magnetic mode is less-than-or-equal-to 11%. The frequency of the mode shifts approximately 11-29% when the elongation of the cross section changes from 1 to 2. The effects of toroidicity and ellipticity differ for each resonant mode.

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A variational principle is applied to the problem of magnetohydrodynamics (MHD) equilibrium of a self-contained elliptical plasma ball, such as elliptical ball lightning. The principle is appropriate for an approximate solution of partial differential equations with arbitrary boundary shape. The method reduces the partial differential equation to a series of ordinary differential equations and is especially valuable for treating boundaries with nonlinear deformations. The calculations conclude that the pressure distribution and the poloidal current are more uniform in an oblate self-confined plasma ball than that of an elongated plasma ball. The ellipticity of the plasma ball is obviously restricted by its internal pressure, magnetic field, and ambient pressure. Qualitative evidence is presented for the absence of sighting of elongated ball lightning.

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The hypersonic waverider forebody is designed in this paper. For the present waverider, the undersurface is carved out as a stream surface of a hypersonic inviscid flow field around wedge-elliptic cone, and the upper surface is assumed to be a freestream surface. A finite-volume code is used to generate the three-dimensional flow field. The leading edge is determined by satisfying the condition that the lip is situated at the intersection line of shocks.

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A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.