3 resultados para electronics sector

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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For efficiently cooling electronic components with high heat flux, experiments were conducted to study the flow boiling heat transfer performance of FC-72 over square silicon chips with the dimensions of 10 × 10 × 0.5 mm3. Four kinds of micro-pin-fins with the dimensions of 30 × 60, 30 × 120, 50 × 60, 50 × 120 μm2 (thickness, t × height, h) were fabricated on the chip surfaces by the dry etching technique for enhancing boiling heat transfer. A smooth surface was also tested for comparison. The experiments were made at three different fluid velocities (0.5, 1 and 2 m/s) and three different liquid subcoolings (15, 25 and 35 K). The results were compared with the previous published data of pool boiling. All micro-pin-fined surfaces show a considerable heat transfer enhancement compared with a smooth surface. Flow boiling can remarkably decrease wall superheat compared with pool boiling. At the velocities lower than 1 m/s, the micro-pin-finned surfaces show a sharp increase in heat flux with increasing wall superheat. For all surfaces, the maximum allowable heat flux, qmax, for the normal operation of LSI chips increases with fluid velocity and subcooling. For all micro-pin-finned surfaces, the wall temperature at the critical heat flux (CHF) is less than the upper limit for the reliable operation of LSI chips, 85◦C. The largest value of qmax can reach nearly 148 W/cm2 for micro-pin-finned chips with the fin height of 120 μm at the fluid velocity of 2 m/s and the liquid subcooling of 35 K. The perspectives for the boiling heat transfer experiment of the prospective micro-pin-finned sur- faces, which has been planned to be made in the Drop Tower Beijing/NMLC in the future, are also presented.

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设计了一种应用于兰州重离子加速器注入器的电源控制器,该控制器基于微处理器AT-mega128,结合MAX7000系列的复杂可编程器件和RTL8019AS网关芯片来实现对电源系统的控制,并通过RS-232总线实现与上位机的串口通信。应用结果表明,该控制器具有良好的通用性、灵活性、可远程控制及性能稳定等特点,实现了注入器磁铁电源10-4量级的幅度稳定性,使注入器引出的束流强度、束流品质、束流稳定性和供束效率等得到很大的提高。

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以9.7MeV/u的238U36+,5.62MeV/u的70Zn10+为典型离子,分析并模拟了分离扇回旋加速器(SSC)的注入、加速和引出,得到了SSC在理论等时场下横向和纵向的接受度。为了研究SSC在实际情况下的接受度,在实测场的基础上采用Kr-Kb方法以及Lagrange插值方法建立了与实际比较符合的等时场,计算了该等时场下SSC横向和纵向的接受度,发现了导致SSC实际接受度和传输效率低的主要原因在于注入系统中的MSI3元件和引出系统中的MSE3元件设计存在缺陷。模拟结果显示,通过改变MSI3和MSE3的曲率或者垫铁改变元件内部的场分布可以改善SSC的实际接受度和传输效率。