Optical properties of dye-doped zirconia films by spectroscopic ellipsometry

The optical properties of zirconia films doped with rhodamine 6G and oxazine 725 by the sol-gel process were investigated using spectroscopic ellipsometry (SE). Accurate refractive index n and the extinction coefficient k were determined using a three-oscillator classical Lorentz model in the wavelength range of 300-800 nm. The derived refractive index of dye-doped films exhibited anomalous dispersion in the absorption region. Wavelength tunable output lasing action yellow and near-infrared wavelength region was achieved by DFB configuration using zirconia films doped with R6G and oxazine 725. (c) 2006 Elsevier B.V. All rights reserved.

Absorbance kinetics of dye-doped systems with photochemical first order kinetics

Often it is assumed that absorbance decays in photochromic materials with the time dependence of the photochemical kinetics, i.e. exponentially for first order kinetics. Although this may hold in the limiting case of vanishing absorbance, deviations are to be expected for realistic samples, because the local photochemical kinetics slows down with increasing initial absorption and penetration depth of the radiation. We discuss the theory of the kinetics of initially homogeneous photochromic samples and derive analytical solutions. In extension of Tomlinson's theory we find an analytical solution that holds with good approximation even for samples that exhibit a small residual absorption in the saturation limit. The theoretical time dependence of the absorbance originating from photochemical first order kinetics of dye-doped systems is compared with experimental data published by Lafond et al. for fulgides doped in different polymer matrices. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al.

ZnO Nanorods as Scatterers for Random Lasing Emission from Dye Doped Polymer Films

A random lasing emission from 4-(dicy-anomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polystyrene (PS) thin films was realized by the scattering role of ZnO nanorods. The device was fabricated by spin-coating DCJTB doped PS on ZnO nanorods. The ZnO nanorods were grown on indium-tin-oxide (ITO) glass substrate by hydrothermal synthesis method. It can be seen that the device emits a resonance multimode peak at center wavelength of 630 nm with a mode line-width of less than 0.23 nm and exhibits threshold excitation intensity as low as 0.375 mJ pulse(-1) cm(-2). The agreement of the dependence of threshold pumped intensity on the excitation area with the random laser theory indicates that the lasing emission realized here is random laser. Our results demonstrate that the nanostructured ZnO nanorods are promising candidate as alternative sources of coherent light emission to realize organic lasers.

Improvement of amplified spontaneous emission performance by doping tris(8-hydroxyquinoline) aluminum (Alq3) in dye-doped polymer thin films

A well-known red fluorescent dye 4-(dicy-anomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB) was codoped with an electron transport organic molecule tris(8-hydroxyquinohne) aluminum (Alq3) in a host matrix of polystyrene (PS), and the amplified spontaneous emission (ASE) was studied by optically pumping. It was found that the ASE performance was significantly improved by the introduction of Alq3. The Alq3:DCJTB:PS blending thin films showed a low threshold (2.4 mu J/pulse) and a high net gain coefficient (109.95 cm(-1)) compared with the pure DCJTB:PS system (threshold of 15.2 mu J/pulse and gain of 35.94 cm(-1)). The improvement of the ASE performance was considered to be attributable to the effective Foster energy transfer from Alq(3) to DCJTB. Our results demonstrate that the Alq(3):DCJTB could be a promising candidate as gain medium for red organic diode lasers.

Random lasing emission from a red fluorescent dye doped polystyrene film containing dispersed polystyrene nanoparticles

The authors report a random lasing emission from 4-(dicy-anomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran doped polystyrene thin films by introducing polystyrene nanoparticles. The aspects of concentration and diameter of polystyrene nanoparticles have been intensively investigated and found that the lasing occurs due to the scattering role of polystyrene nanoparticles. The devices emit a resonance multimode peak centered at a wavelength of 630 nm with a mode linewidth of less than 0.35 nm and exhibit threshold excitation intensity of as low as 0.06 mJ pulse(-1) cm(-2). The microscopic laser cavities formed by multiple scattering have been captured. The demonstration of random laser opens up the possibility of using organic scattering as alternative sources of coherent light emission.

Amplified spontaneous emission and gain from optically pumped films of dye-doped polymers

The amplified spontaneous emission and gain characteristics of various fluorescent dyes, 2-(1,1-dimethylethyl)-6(2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo[ij] quinolizin-9-1)ethenyl)-4H-pyran-4-ylidene) propanedinitrile (DCJTB) and 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM), doped in polystyrene (PS) matrices were studied and compared. It was found that DCJTB has a larger net gain, 40.72 cm(-1), a lower loss, 2.49 cm(-1), and a lower threshold, 0.16 (mJ/pulse)/cm(2), than DCM, which has a net gain of 11.95 cm(-1), a loss of 9.25 cm(-1), and a threshold of 4(mJ/pulse)/cm(2). The improvement of performance in DCJTB PS films is attributed to the larger free volume of DCJTB caused by the introduction of steric spacer groups into the DCJTB molecule.

Effect of dye-doped concentration on the charge carrier recombination in molecularly doped organic light-emitting devices

The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl- 9-enyl)-4H-pyran(DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq(3)) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient (gamma) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

Photoluminescent properties of dye-doped poly(N-vinyleabzole) (PVK) in microcavity

A surface emitting microcavity was formed by sandwiching a polymer film containing poly(N-vinyleabzole) (PVK). 8-hydroxyquinoline aluminium (Alq(3)) and 4-(Dicyanome thylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-Pyran(DCM) between a distributed Bragg reflector (DBR) with a reflectivity of 99% and a silver film. The sample was optically pumped with 250 ps pulses at 2 Hz repetition rate by a 355 nm line of the third harmonic of a mode-lock Nd:YAG laser. The lasing phenomenon was observed in DCM-doped PVK microcavity. The full width at half maximum (FWHM) was 3 nm with the peak wavelength at 602 nm. The threshold energy for lasing was estimated to be about 3 mu J. (C) 2000 Elsevier Science S.A. All rights reserved.

Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass for waveguide amplifier application

Tungsten-tellurite glass with molar composition of 60TeO(2)-30WO(3)-10Na(2)O has been investigated for developing planar broadband waveguide amplifier application. Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass have been discussed. The results show that the introduction Of WO3 increases significantly the glass transition temperature and the maximum phonon energy. Er3+-doped tungsten-tellurite glass exhibits high glass transition temperature (377 degrees C), large emission cross-section (0.91 x 10(-20) cm(2)) at 1532 nm and broad full width at half maximum (FWHM), which make it preferable for broadband Er3+-doped waveguide amplifier application. (c) 2005 Elsevier B.V. All rights reserved.

用于波导放大器的Er^3＋／Yb^3＋共掺磷酸盐玻璃的性能研究

通过优化熔融条件和玻璃组份，成功开发出一种新的Er^3+／Yb^3+共掺磷酸盐玻璃，其在沸水和熔盐中均表现出很好的化学稳定性。通过分析室温下Er^3+／Yb^3+共掺磷酸盐玻璃的吸收光谱，计算得到了Er^3+离子在波长1533nm处的峰值发射截面和杜得-奥菲而特强度参数；其中Er^3+离子在波长1533nm处的峰值发射截面为0．72×10^20cm^2，大于Schott的IOG1玻璃中Er^3+离子的峰值发射截面0．67×10^-20cm^2。通过改变离子交换的条件，获得了1．55μm单模光波导的制作条件

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED