Magnetic field modulated direct overwrite with pulsed laser irradiation for TbFeCo magneto-optical disks

WE have designed a dual-beam magneto-optical (MO) storage system to test the dynamic storage properties of MO disks. The characteristics of this dual-beam system are demonstrated. Magnetic field modulated direct overwrite, which is a promising technique for highspeed MO storage, is realized on TbFeCo MO disks with this dual-beam MO system. The effect of light intensity, magnetic field intensity, and linear velocity of the disk and the modulating frequency variation on carrier-to-noise ratio is investigated. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

一种协同训练系统中的安全设计

文章根据一种协同训练系统中的特殊安全需求,分析了要解决的安全问题,并对用户登录验证、用户权限管理以及远程资源访问验证协议等方面提出了的设计方案以及部分实现.

Transient state of chiral recognition in a binary mixture of cyclodextrins in capillary electrophoresis

The transient state (as the defined point where no enantioseparation is obtained in a dual chiral selector system) of chiral recognition of aminoglutethimide in a binary mixture of neutral cyclodextrins (CDs) was studied by capillary electrophoresis (CE). The following three dual selector systems were used: alpha-cyclodextrin (alpha-CD) and beta-cyclodextrin (beta-CD); alpha-CD and heptakis(di-O-methyl-beta-cyclodextrin) (DM-beta-CD); alpha-CD and heptakis(tri-O-methyl-beta-cyclodextrin) (TM-beta-CD). The S-(-) enantiomer of the analyte was more strongly retained in the presence of either alpha-CD or TM-beta-CD at pH 2.5, 100 mM phosphate buffer, while the R-(+) enantiomer was more strongly retained in the presence of either P-CD or DM-P-CD. In the more simple case, the elution order is invariably kept if the enantiomers have the same elution order in either one of the two hosts of the binary mixture. In contrast, the elution order may be switched by varying the concentration ratio of two hosts that produce opposite elution order for this particular analyte. In such a dual selector system, the enantioselectivity will disappear at the transient state at a certain ratio of host,:host, Moreover, the migration times of the two enantiomers with host, alone (diluted in buffer) is approximately equal to the migration times at the corresponding concentration of host, alone (diluted in buffer), where the ratio of concentrations of host,:host, is the same as in the binary mixture at the transient state. As found by nuclear magnetic resonance experiments, the analyte is forming a 1:1 complex with either one of the CDs applied. From this finding, a theoretical model based on the mobility difference of the two enantiomers was derived that was used to simulate the transient state. (C) 2000 Elsevier Science B.V. All rights reserved.

Interactions of three dual-dressing effects of four-wave mixing in a five-level atomic system

We study the four-wave mixing (FWM) in an opening five-level system with two dressing fields. There are three kinds of doubly dressing mechanisms (parallel cascade, sequential cascade, and nested cascade) in the system for doubly dressed four-wave mixing. These mechanisms reflect different correlations between two dressing fields and different effects of two dressing fields to the FWM. Investigation of these mechanisms is helpful to understand the generated high-order nonlinear optical signal dressed by multi-fields.

A DUAL ION-BEAM EPITAXY SYSTEM

The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.

CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.

A new dual injection system for AMS facility

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