10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth

In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator( EAM ) monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure ( 22 x 10(2) Pa ) selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.

Optical microwave generation based on DFB lasers

A new device of two parallel distributed feedback ( DFB) laser integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB lasers in parallel, which had a small difference in frequency. Continuous rapidly tunable optical microwave signals from 13 GHz to 42 GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.

Narrow-Linewidth Microwave Generation Using a Self-Injected DBR Laser Diode

A novel technique for generating narrow-linewidth microwave or millimeter-wave signals is proposed. In this scheme, a delayed self-injected distributed Bragg reflector laser diode, which is tuned by a low-frequency square-wave voltage, is used to generate two correlated lightwaves simultaneously. Experiments show that the 10-dB linewidth of generated microwave signals is reduced from 147 MHz to 68 kHz utilizing the proposed self-injection technique.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source. (C) 2009 Optical Society of America

Optical microwave generation using two parallel DFB lasers integrated with Y-branch waveguide coupler

A new device of two parallel distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB laser in parallel, which had a small difference in frequency. Continuous rapid tuning of optical microwave signal from 13 to 42 GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.

Low-threshold conjugated polymer distributed feedback lasers on InP substrate

We demonstrate a low threshold polymer solid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure. The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) doped polystyrene (PS) and formed by drop-coating method. The second order Bragg scattering region on the InP substrate gave rise to strong feedback, thus a lasing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd: YAG pulsed laser. The devices show a laser threshold as low as 7 nJ/pulse.