一种步进扫描投影光刻机承片台不平度检测新技术

提出一种步进扫描投影光刻机承片台不平度检测新技术。在晶圆与承片台存在不同偏移量时,利用线性差分传感器在线测量晶圆上不同点的局部高度;通过建立临时边界条件,以递推法消除晶圆面形影响,并逐行计算出承片台的相对不平度;通过逐行计算的结果递推相邻行之间的高度差,并将该高度差叠加到每一行,以消除临时边界条件的限制,得到处于同一高度上的承片台不平度;将计算的结果作为初始值,根据最小二乘原理,以邻近的四个测量点作为参考,逐步逼近得到承片台的真实不平度。计算机仿真结果验证了该检测方法的正确性,计算结果逐步收敛并逼近真实值

Frog skins keep redox homeostasis by antioxidant peptides with rapid radical scavenging ability

The question of how amphibians can protect themselves from reactive oxygen species when exposed to the sun in an oxygen-rich atmosphere is important and interesting, not only from an evolutionary viewpoint, but also as a primer for researchers interested in mammalian skin biology, in which such peptide systems for antioxidant defense are not well studied. The identification of an antioxidant peptide named antioxidin-RL from frog (Odorrana livida) skin in this report supports the idea that a peptide antioxidant system may be a widespread antioxidant strategy among amphibian skins. Its ability to eliminate most of the 2,2'-azino-bis(3-ethylbenzthiazoline-6-sulfonic acid) radical tested within 2 s, which is much faster than the commercial antioxidant factor butylated hydroxytoluene, suggests that it has a potentially large impact on redox homeostasis in amphibian skins. Cys10 is proven to be responsible for its rapid radical scavenging function and tyrosines take part in the binding of antioxidin-RL to radicals according to our nuclear magnetic resonance assay. (C) 2010 Elsevier Inc. All rights reserved.

Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X

The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the IN curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.