Using wavelet transform to study the Lipschitz local singular exponent in wall turbulence

In this paper, wavelet,transform is introduced to study the Lipschitz local singular exponent for characterising the local singularity behavior of fluctuating velocity in wall turbulence. I, is found that the local singular exponent is negative when the ejections and sweeps of coherent structures occur in a turbulent boundary layer.

Collapsed isoparametric element as a singular element for a crack normal to the bi-material interface

It is shown that the variable power singularity of the strain field at the crack tip can be obtained by the simple technique of collapsing quadrilateral isoparametric elements into triangular elements around the crack tip and adequately shifting the side-nodes adjacent to this crack tip. The collapsed isoparametric elements have the desired singularity at crack tip along any ray. The strain expressions for a single element have been derived and in addition to the desired power singularity, additional singularities are revealed. Numerical examples have shown that triangular elements formed by collapsing one side lead to excellent results.

用子波变换研究壁湍流Lipschitz奇异性指数

本文用子波变换研究了描述壁湍流脉动速度局部奇异性行为的Ｌｉｐｓｃｈｉｔｚ奇异性指数，发现在湍流边界层中，猝发和扫掠发生时脉动速度信号的Ｌｉｐｓｃｈｉｔｚ局部奇异性指数为负值·

A delay model for noise-induced bi-directional switching

Many biological systems can switch between two distinct states. Once switched, the system remains stable for a period of time and may switch back to its original state. A gene network with bistability is usually required for the switching and stochastic effect in the gene expression may induce such switching. A typical bistable system allows one-directional switching, in which the switch from the low state to the high state or from the high state to the low state occurs under different conditions. It is usually difficult to enable bi-directional switching such that the two switches can occur under the same condition. Here, we present a model consisting of standard positive feedback loops and an extra negative feedback loop with a time delay to study its capability to produce bi-directional switching induced by noise. We find that the time delay in the negative feedback is critical for robust bi-directional switching and the length of delay affects its switching frequency.

Bi-doped BaF2 crystal for broadband near-infrared light source

Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America

Upconversion and fluorescence spectral studies of Er3+/Yb3+-codoped Bi(2)Q(3)-GeO2-Ga(2)Q(3)-Na2O glasses

The absorption spectra and upconversion fluorescence spectra of Er3+/-Yb3+-codoped natrium-gallium-germanium-bismuth glasses are measured and investigated. The intense green (533 and 549 nm) and red (672 nm) emission bands were simultaneously observed at room temperature. The quadratic dependence of the green and red emission on excitation power indicates that the two-photon absorption processes occur. The influence of Ga2C3 on upconversion intensity is investigated. The intensity of green emissions increases slowly with increasing Ga2O3 content, while the intensity of red emission increases significantly. The possible upconversion mechanisms for these glasses have also been discussed. The maximum phonon energy of the glasses determined based on the infrared (IR) spectral analysis is as low as 740 cm(-1). The studies indicate that Bi2O3-GeO2-Ga2O3-Na2O glasses may be potential materials for developing upconversion optical devices (c) 2006 Published by Elsevier B.V.

Effects of melting temperature on the broadband infrared luminescence of bi-doped and Bi/Dy co-doped chalcohalide glasses

Bismuth (Bi)-doped and Bi/Dy co-doped chalcohalide glasses are investigated as promising materials for amplifiers in optical communication. The samples synthesized at lower melting temperatures (MTs) are characterized by more intensified infrared emissions. With respect to the redox process of a liquid mixture at different MTs, we attribute an emission at 1230 nm to low-valent Bi ions. The lower MT favors the formation of LVB ions, i.e. Bi+ or Bi2+, while the higher MT promotes the production of higher-valent Bi ions Bi3+. An enhanced broadband infrared luminescence with the full-width at half-maximum over 200 nm is achieved from the present Bi/Dy co-doped chalcohalide glasses.