掺镱双包层光纤放大器高功率脉冲放大特性

从放大器速率方程出发，分析了掺镱双包层光纤放大器的放大特性。模拟计算了无信号输入时放大器上能级粒子数、泵浦功率和放大自发辐射（ASE）在放大器中的稳态分布。分析了前向和后向泵浦时，高功率高斯脉冲放大时的脉冲波形畸变、上能级粒子数的时间特性、放大器存储能量和脉冲能量演化等动态特性。讨论了掺镱双包层光纤放大器输出脉冲能量随不同输入脉冲峰值功率和泵浦功率的关系。该模型和结论对高功率脉冲放大器的设计和优化具有一定的理论指导意义。

不同腔结构下的声光调Q双包层光纤激光器特性研究

报道了半导体激光器端面抽运不同结构的声光调Q的双包层光纤激光器的脉冲输出特性.对前向、后向不同抽运方式的掺镱调Q双包层光纤激光器在输出平均功率,调Q脉冲宽度及脉冲稳定性进行了对比及讨论;其中后向抽运的光纤激光器,在10kHz重复频率调制下,获得了斜效率为60%的平均功率输出,其脉冲宽度为52ns,单脉冲能量为0·3mJ.最后利用不同抽运方式下的速率方程,理论分析调Q脉冲的特性,分析结果与实验相符.

Characteristics of Gas Flow Within a Micro Diffuser/Nozzle Pump

英文摘要: The gas flow characteristics for various shapes of micro diffuser/nozzles have been experimentally investigated. The micro diffuser/nozzles with the lengths of 70 mu m, 90 mu m, 125 mu m and the taper angles of 7 degrees, 10 degrees, 14 degrees are designed and fabricated based on silicon micromachining technology for optimizing and comparing. The flat-wall diffuser/nozzle is 40 mu m x 5 mu m in depth and width. An experimental setup is designed to measure the gas flow rates under controlled temperature and pressure condition. Optimized values for the taper angle and the length of the diffuser/nozzle are experimentally obtained.

Optimization of optical parametric chirped pulse amplification with different pump wavelengths

Optical parametric chirped pulse amplification with different pump wavelengths was investigated using LBO crystal, at signal central wavelength of 800 nm. According to our theoretical simulation, when pump wavelength is 492.5 nm, there is a maximal gain bandwidth of 190 nm. centered at 805 nm in optimal noncollinear angle using LBO. Presently, pump wavelength of 492.5 nm can be obtained from second harmonic generation of a Yb:Sr-5(PO4)(3)F laser. The broad gain bandwidth can completely support similar to 6 fs with a spectral centre of seed pulse at 800 nm. The deviation from optimal noncollinear angle can be compensated by accurately tuning crystal angle for phase matching. The gain spectrum with pump wavelength of 492.5 nm is much better than those with pump wavelengths of 400, 526.5 and 532 nm, at signal centre of 800 nm. (c) 2005 Elsevier B.V. All rights reserved.

Red shift and broadening of backward harmonic radiation from electron oscillations driven by femtosecond laser pulse

The characteristics of backward harmonic radiation due to electron oscillations driven by a linearly polarized fs laser pulse are analysed considering a single electron model. The spectral distributions of the electron's backward harmonic radiation are investigated in detail for different parameters of the driver laser pulse. Higher order harmonic radiations are possible for a sufficiently intense driving laser pulse. We have shown that for a realistic pulsed photon beam, the spectrum of the radiation is red shifted as well as broadened because of changes in the longitudinal velocity of the electrons during the laser pulse. These effects are more pronounced at higher laser intensities giving rise to higher order harmonics that eventually leads to a continuous spectrum. Numerical simulations have further shown that by increasing the laser pulse width the broadening of the high harmonic radiations can be controlled.

Efficient diode-pumped Tm : YALO(3) laser with a pump recycling scheme

By using a pump recycling configuration, the maximum power of 8.1 W in the wavelength range 1.935-1.938 mu m is generated by a 5-mm long Tm:YAlO3 (4 at. %) laser operating at 18 degrees C with a pump power of 24 W. The highest slope efficiency of 42% is attained, and the pump quantum efficiency is up to 100%. The Tm:YAlO3 laser is employed as a pumping source of singly-doped Ho(l%):GdVO4 laser operating at room temperature, in which continuous wave output power of greater than 0.2 W at 2.05 mu m is achieved with a slope efficiency of 9%.

Diode-pumped Q-switched Tm:YAP laser with a pump recycling scheme

We reported on a diode end-pumped AO Q-switched Tm:YAP laser at 1937 nm. The average output power was 3.9 W, with a slope efficiency of 29.4% and optical-optical conversion efficiency of 21.6% at a 5-kHz repetition rate. The temperature dependency of the output power and the pulse width at different repetition rates were investigated in details.

脉冲参量下转换纠缠双光子的横向光学效应研究及超快简并pump-probe探测InAs/GaAs量子点理论分析

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements

We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs/GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (C) 2008 American Institute of Physics.