10 resultados para analytical approach

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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从波动理论出发,对锥形光纤的纵向传播常数进行泰勒(Taylor)级数展开,经近似得到了锥形光纤功率分布的解。基于此理论,对锥形光纤的功率分布特性进行了讨论,并分析了锥形光纤的长度、锥度和光纤折射率等参数对锥形光纤不同模式功率分布的影响。为了减小功率泄漏,当光从锥形光纤大端入射时,应当减小锥长,减小锥度,增大纤芯包层折射率差;当光从锥形光纤小端入射时,应当增加锥长,增加锥度,增大纤芯包层折射率差。在长锥长、大锥度情况下,光纤折射率分布的影响相对较小。

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The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

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By the semi-inverse method, a variational principle is obtained for the Thomas-Fermi equation, then the Ritz method is applied to solve an analytical solution, which is a much simpler and more efficient method.

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The Reynolds-averaged Navier-Stokes equations for describing the turbulent flow in a straight square duct are formulated with two different turbulence models. The governing equations are then expanded as a multi-deck structure in a plane perpendicular to the streamwise direction, with each deck characterized by its dominant physical forces as commonly carried out in analytical work using triple-deck expansion. The resulting equations are numerically integrated using higher polynomial (H-P) finite element technique for each cross-sectional plane to be followed by finite difference representation in the streamwise direction until a fully developed state is reached. The computed results using the two different turbulence models show fair agreement with each other, and concur with the vast body of available experimental data. There is also general agreement between our results and the recent numerical works anisotropic k-epsilon turbulence model.

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Quantum measurement of a solid-state qubit by a mesoscopic detector is of fundamental interest in quantum physics and an essential issue in quantum computing. In this work, by employing a unified quantum master equation approach constructed in our recent publications, we study the measurement-induced relaxation and dephasing of the coupled-quantum-dot states measured by a quantum-point contact. Our treatment pays particular attention on the detailed-balance relation, which is a consequence of properly accounting for the energy exchange between the qubit and detector during the measurement process. As a result, our theory is applicable to measurement at arbitrary voltage and temperature. Both numerical and analytical results for the qubit relaxation and dephasing are carried out, and important features are highlighted in concern with their possible relevance to future experiments.

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Based on the Buttiker dephasing model, we propose an analytical scattering matrix approach to the long-range electron transfer phenomena. The present efficient scheme smoothly interpolates between the superexchange and the sequential hopping mechanisms. Various properties such as the drastic dephasing-assisted enhancement and turnover behaviors are demonstrated in good agreement with those obtained via the dynamical reduced density-matrix methods. These properties are further elucidated as results of the interplay among the dephasing strength, the tunneling parameter, and the bridge length of the electron transfer system. (C) 2001 American Institute of Physics.

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An arch-shaped beam with different configurations under electrostatic loading experiences either the direct pull-in instability or the snap-through first and then the pull-in instability. When the pull-in instability occurs, the system collides with the electrode and adheres to it, which usually causes the system failure. When the snap-through instability occurs, the system experiences a discontinuous displacement to flip over without colliding with the electrode. The snap-through instability is an ideal actuation mechanism because of the following reasons: (1) after snap-through the system regains the stability and capability of withstanding further loading; (2) the system flips back when the loading is reduced, i.e. the system can be used repetitively; and (3) when approaching snap-through instability the system effective stiffness reduces toward zero, which leads to a fast flipping-over response. To differentiate these two types of instability responses for an arch-shaped beam is vital for the actuator design. For an arch-shaped beam under electrostatic loading, the nonlinear terms of the mid-plane stretching and the electrostatic loading make the analytical solution extremely difficult if not impossible and the related numerical solution is rather complex. Using the one mode expansion approximation and the truncation of the higher-order terms of the Taylor series, we present an analytical solution here. However, the one mode approximation and the truncation error of the Taylor series can cause serious error in the solution. Therefore, an error-compensating mechanism is also proposed. The analytical results are compared with both the experimental data and the numerical multi-mode analysis. The analytical method presented here offers a simple yet efficient solution approach by retaining good accuracy to analyze the instability of an arch-shaped beam under electrostatic loading.

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Nine cases of standard addition methods in instrumental analysis, including linear instruments, a non-linear response, the electrochemical Nernst equation, and radiochemical techniques.

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A novel "bottom-up" approach to highly controllable nanoelectrode ensembles (NEEs) has been developed using colloidal nanoparticle self-assembly techniques. Ibis solution-based strategy allows flexible control over nanoelectrode size, shape, and interspacing of the as-prepared NEEs. Atomic force microscopy (AFM) was proved to be a powerful tool to monitor the NEE topography, which yields parameters that can be used to calculate the fractional nanoelectrode area of the NEEs. AFM, ac impedance, and cyclic voltammetry studies demonstrate that most of nanoelectrodes on the NEEs (at least by 9-min self-assembly) are not diffusionally isolated under conventional ac frequency range and scan rates. As a result, the NEEs behave as "nanoelectrode-patch" assemblies. Besides, the as-prepared NEEs by different self-assembling times show an adjustable sensitivity to heterogeneous electron-transfer kinetics, which may be helpful to sensor applications. Like these NEEs constructed by other techniques, the present NEEs prepared by chemical self-assembly also exhibit the enhancement of electroanalytical detection limit consistent with NEE theory prediction.