157 resultados para ammonium glufosinate

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Growth, nitrogen and carbohydrate metabolism in relation to eutrophication were studied for a submerged plant Potamogeton maackianus, a species common in East Asian shallow lakes. The plants were grown in six NH4+-N concentrations (0.05, 0.50, 1.00, 3.50, 5.00 and 10.00 mg/L) for six days. NH4+-N levels in excess of 0.50 mg/L inhibited the plant growth. The relationships between external NH4+-N availability and total nitrogen (TN), protein-N, free amino acid-N (FAA-N) and NH4+-N in plant tissues, respectively, conformed to a logarithmic model suggesting that a feedback inhibition mechanism may exist for ammonium uptake. The response of starch to NH4+-N was fitted with a negative, logarithmic curve. Detailed analysis revealed that the influx NH4+-N had been efficiently incorporated into organic-N and eventually stored as protein at the expense of starch accumulation. These data suggest that this species may be able to tolerate high levels of ammonium when dissolved oxygen is sufficient.

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Acute biochemical responses of Potamogeton crispus L. to high external ammonium were investigated in an aquarium experiment. Shoots of P. crispus were incubated in aquaria for 24 h or 48 h at five treatments of ammonium-0, 1, 5, 10 and 20 mg/L NH4-N. Soluble sugar content of the shoots declined markedly with increasing ammonium levels, whereas soluble amino acid content increased dramatically. Responses of two antioxidant enzymes as well as soluble protein content fit a lognormal distribution with increasing ammonium levels. High ammonium levels (NH4-N greater than or equal to 5 mg/L) caused significant acute biochemical changes in P. crispus, which potentially could lead to significant biochemical damage.

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An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)(2)S2O8, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1 mu m(.)min(-1) and 0.5 nm(.)min(-1), respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.

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Hydrate equilibrium data of the CH4 + tetra-n-butyl ammonium bromide (TBAB) + water have been measured by using the isothermal pressure search method for four components of TBAB aqueous solutions. The three-phase equilibrium lines obtained in the present study are shifted to the low-temperature or high-pressure side from that of the stoichiometric TBAB solution. Moreover, methane uptake into semi-clathrates is confirmed by a shift in the clathrate regions when methane is present. The experiments are carried out in the pressure range of (0.5 to 11) MPa and in the temperature range of (281.15 to 295.15) K.