自然界中ZnS-CdS完全类质同象系列的发现和初步研究

过去认为在自然界中的Cd只能有限替代ZnS中的Zn。但是，近几年笔者在研究贵州牛角塘镉锌矿床时，经电子探针、扫描电镜和透射电镜等多种方法的研究，发现锌硫化物中的Cd主要以类质同象存在，其含量可从0．8％增至37．93％；镉硫化物中的Zn同样主要以类质同象存在，其含量为2．43％～38．64％。锌硫化物与镉硫化物成渐变的过渡关系，并且Zn与Cd成很好的负相关关系，相关系数达0．99以上，形成ZnS-CdS的完全类质同象系列。这一发现无论在矿物学，还是在地球化学和矿床学上都具有重要的理论意义和实用价值。

Synthesis and luminescence of CdS/ZnS core/shell nanocrystals

CdS/ZnS core/shell nanocrystals were prepared from an aqueous/alcohol medium. A red shift of the absorption spectrum and an increase of the room temperature photoluminescence intensity accompanied shell growth.

Synthesis and luminescence of CdS/ZnS core/shell nanocrystals

CdS/ZnS core/shell nanocrystals were prepared from an aqueous/alcohol medium. A red shift of the absorption spectrum and an increase of the room temperature photoluminescence intensity accompanied shell growth.

Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices

High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0x10(16)-3.0x10(17))/cm(3) and 100-350 cm(2)/V s, respectively. An on-off ratio greater than 10(8) and a subthreshold swing as small as 65 mV/decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB/p(+)-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions. (c) 2006 American Institute of Physics.

Pressure dependence of Mn2+ fluorescence in ZnS : Mn2+ nanoparticles

The photoluminescence of Mn2+ in ZnS:Mn2+ nanoparticles with an average size of 4.5 nm has been measured under hydrostatic pressure from 0 to 6 GPa. The emission position is red-shifted at a rate of -33.3+/-0.6meV/GPa, which is in good agreement with the calculated value of -30.4meV/GPa using the crystal field theory. (C) 2000 Elsevier Science B.V. All rights reserved.

Photoluminescence of ZnS clusters in zeolite-Y

Two obvious emissions are observed from the ZnS clusters encapsulated in zeolite-Y. The emission around 355 nm is sharp and weak, locating at the onset of the absorption edge. The band around 535 nm is broad, strong and Stokes-shifted. Both the two emissions shift to blue and their intensities firstly increase then decrease as the loading of ZnS in zeolite-Y or clusters size decreases. Through investigation, the former is attributed to the excitonic fluorescence, and the latter to the trapped luminescence from surface states. The cluster size-dependence of the luminescence may be explained qualitatively by considering both the carrier recombination and the nonradiative recombination rates. Four peaks appearing in the excitation spectra are assigned to the transitions of 1S-1S, 1S-1P, 1S-1D and surface state, respectively. The excitation spectra of the clusters do not coincide with their absorption spectra. The states splitted by quantum-size confinement are detected in the excitation spectra, but could not be differentiated in the optical absorption spectra due to inhomogeneous broadening. The size-dependence of the excitation spectra is similar to that of the absorption spectra. Both the excitation spectra of excitonic and of trapped emissions are similar, but change in relative intensity and shift in position are observed.

Absorption and luminescence of the surface states in ZnS nanoparticles

A broad absorption band around 500 nm is observed in ZnS nanoparticles. The absorption becomes more intensive and shifts to the blue as the particle size is decreased. The absorption energy is lower than the band gap of the particles and is considered to be caused by the surface states. This assignment is supported by the results of the fluorescence and of the thermoluminescence of the surface states. Both the absorption and the fluorescence reveal that the surface states are size dependent. The glow peak of the semiconductor particles is not varied as much upon decreasing size, indicating the trap depth of the surface states is not sensitive to the particle size. Considering these results, a new model on the size dependence of the surface states is proposed, which may explain our observations reasonably. (C) 1997 American Institute of Physics.

Thermoluminescence of ZnS nanoparticles

The thermoluminescence (TL) of ZnS nanoparticles is reported. The TL intensity increases as the particle size is decreased. The consistency of the size dependence of the TL with that of the surface fluorescence indicates that the TL may be related to the surface states. TL may be caused by the recombination of carriers released from the surface states or defect sites by heating. Smaller particles have higher surface/volume ratio and more surface states, therefore contain more accessible carriers for TL. Besides, the carrier recombination rate increases upon decreasing size due to the increase of the overlap between the electron and hole wave functions. These two effects may make the TL increase upon decreasing size of the particles. The appearance of TL prior to any radiation reveals that trapped carriers have pre-existed. The investigation of TL may provide some useful information about the surface states that may explain the size dependence of the surface fluorescence. (C) 1997 American Institute of Physics.

Multilayer assemblies of colloidal ZnS doped with silver and polyelectrolytes based on electrostatic interaction

Multilayer assemblies of silver doped ZnS colloid and polycation were fabricated by a self-assembly technique exploiting electrostatic interaction. UV/Vis spectra showed the uniform deposition process and X-ray photoemission spectroscopy (XPS) confirmed the coexistence of silver. It was found that the emission spectra of the silver doped ZnS colloid red-shifted to 528 nm comparing with undoped ZnS colloid. However, the most important finding was that the luminescence intensity of doped ZnS assembled in films was much stronger than that of undoped ZnS in films and that of doped ZnS in the spin-casting film. The mechanism of the enhancement luminescence was discussed. (C) 1998 Elsevier Science S.A. All rights reserved.

单束、多束飞秒激光在CdS,SiC和GaN表面诱导一维和二维纳米周期结构

报道了单光束、双光束和三光束飞秒激光在CdS,GaN,SiC样品上诱导形成周期远小于激光波长的纳米周期结构.研究表明,其形成机制不同于入射光与表面散射光干涉的经典机制,二次谐波的产生可能在其中起着重要作用;双光束激光干涉在SiC晶体表面诱导形成二维微米-纳米复合周期结构,干涉花样决定微米长周期结构,长周期结构的烧蚀斑上形成了短周期的自组织纳米结构.在上述研究基础上,初步探索三光束干涉形成二维、三维微米-纳米复合周期结构.

Synthesis and characterization of photorefractive polymer based on chemically hybridized CdS-PVK nanocomposite with a new azo chromophore

We report an organic/inorganic polymer composite based on the chemically hybridized photoconductor CdS-PVK nanocomposite doped with a new second-order optically nonlinear chromophore 1-n-butoxy-2-methyl-(4-p-nitrophenylazo)benzene (BMNPAB) and plasticizer 9-ethyl-carbazole (ECZ) to manifest a photorefractive (PR) effect. A detailed description of the synthesis and characterization of BMNPAB is presented. The poled film including PVK-10-CdS nanocomposite and BMNPAB exhibits a high second harmonic generation (SHG) coefficient of 31 pm/V The photoconductivity of PVK-CdS nanocomposite also was studied here. Two-beam coupling experiment clearly indicated an asymmetric optical energy exchange between two beams on the polymer composite at zero electrical field, and the two-beam coupling gain of 50.0 cm(-1) and diffraction efficiencv of 4.2% were obtained at 647.1 nm wavelength. (C) 2007 Elsevier Ltd. All rights reserved.

Photorefractive performance of a novel multifunctional inorganic-organic hybridized nanocomposite sensitized by CdS nanoparticles

A novel multifunctional inorganic-organic photorefractive (PR) poly(N-vinyl)-3-[p-nitrophenylazolcarbazolyl-CdS nanocomposites with different molar ratios of US to poly(N-vinyl)-3-[p-nitrophenylazo]carbazolyl (PVNPAK) were synthesized via a postazo-coupling reaction and chemically hybridized approach, respectively. The nanocomposites are highly soluble and could be obtained as film-forming materials with appreciably high molecular weights and low glass transition temperature (T,) due to the flexible spacers. The PVNPAK matrix possesses a highest-occupied molecular orbital value of about -5.36 eV determined from cyclic voltammetry. Second harmonic generation (SHG) could be observed in PVNPAK film without any poling procedure and 4.7 pm/V of effective second-order nonlinear optical susceptibility is obtained. The US particles as photosensitizers had a nanoscale size in PVNPAK adopting transmission electron microscopy. The improvement of interface quality between US and polymer matrix is responsible for efficient photoinduced charge generation efficiency in the nanocomposites. An asymmetric optical energy exchange between two beams on the polymer composites PVNPAK-CdS/ECZ has been found even without an external field in two-beam coupling (TBC) experiment, and the TBC gain and diffraction efficiency of 14.26 cm(-1) and 3.4% for PVNPAK-5-CdS/ECZ, 16.43 cm(-1) and 4.4% for PVNPAK-15-CdS/ECZ were measured at a 647.1 nm wavelength, respectively.

Optical transmission larger than 1 (T > 1) through ZnS-SiO2/AgOx/ZnS-SiO2 sandwiched thin films

Optical transmission through flat media should be smaller than 1. However, we have observed optical transmission up to T=1.18. The samples were ZnS-SiO2/AgOx/ZnS-SiO2 sandwiched thin films on glass substrate. The supertransmission could only be observed in the near field. We attribute the supertransmission to the lateral propagation relayed by the laser activated and decomposed Ag nanoparticles. (c) 2006 American Institute of Physics.

倾斜角沉积技术制备ZnS双折射雕塑薄膜

使用倾斜角沉积（GLAD）的电子束蒸发技术，制备了倾斜角度在60°～85°之间的ZnS双折射雕塑薄膜（STF）。使用X射线衍射（XRD）和扫描电镜（SEM）检测了ZnS薄膜的结晶状态和断面形貌，使用Lamda-900分光光度计测量了薄膜在不同的偏振光入射时的透过率。研究发现，室温下倾斜沉积ZnS薄膜断面为倾斜柱状结构，且薄膜的结晶程度不高。在相同的监控厚度时，随倾斜角度增大，沉积到基片上的薄膜厚度逐渐变小，但仍然大于余弦曲线显示的理论厚度。根据偏振光垂直入射时薄膜的透过光谱计算了不同角度沉积的薄膜的折射率