Increasing Critical Sensitivity of the Load/Unload Response Ratio before Large Earthquakes with Identified Stress Acclumulation Pattern

The Load/Unload Response Ratio (LURR) method is proposed for short-to-intermediate-term earthquake prediction [Yin, X.C., Chen, X.Z., Song, Z.P., Yin, C., 1995. A New Approach to Earthquake Prediction — The Load/Unload Response Ratio (LURR) Theory, Pure Appl. Geophys., 145, 701–715]. This method is based on measuring the ratio between Benioff strains released during the time periods of loading and unloading, corresponding to the Coulomb Failure Stress change induced by Earth tides on optimally oriented faults. According to the method, the LURR time series usually climb to an anomalously high peak prior to occurrence of a large earthquake. Previous studies have indicated that the size of critical seismogenic region selected for LURR measurements has great influence on the evaluation of LURR. In this study, we replace the circular region usually adopted in LURR practice with an area within which the tectonic stress change would mostly affect the Coulomb stress on a potential seismogenic fault of a future event. The Coulomb stress change before a hypothetical earthquake is calculated based on a simple back-slip dislocation model of the event. This new algorithm, by combining the LURR method with our choice of identified area with increased Coulomb stress, is devised to improve the sensitivity of LURR to measure criticality of stress accumulation before a large earthquake. Retrospective tests of this algorithm on four large earthquakes occurred in California over the last two decades show remarkable enhancement of the LURR precursory anomalies. For some strong events of lesser magnitudes occurred in the same neighborhoods and during the same time periods, significant anomalies are found if circular areas are used, and are not found if increased Coulomb stress areas are used for LURR data selection. The unique feature of this algorithm may provide stronger constraints on forecasts of the size and location of future large events.

Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy

A series of 1-mu m-thick undoped In0.53Ga0.47As with different substrate growth temperature (T-g) or different beam flux pressure (BFP) of As were grown on lattice-matched semi-insulating InP (001) substrates by molecular beam epitaxy (MBE). Van der Pauw Hall measurements were carried out for these In0.53Ga0.47As samples. The residual electron concentration decreased with increasing temperature from 77 to 140 K, but increased with increasing temperature from 140 to 300 K. Rapid thermal annealing (RTA) can reduce the residual electron concentration. The residual electron mobility increased with increasing temperature from 77 to 300 K. All these electrical properties are associated with As antisite defects. (c) 2006 Elsevier B.V. All rights reserved.

Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

4.2 K photoluminescence (PL) and 77 K standard Hall-effect measurements were performed for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor (HEMT) structures grown on GaAs substrates with different indium contents in the InxGa1-xAs well or different Si delta-doping concentrations. It was found that electron concentrations increased with increasing PL intensity ratio of the "forbidden" transition (the second electron subband to the first heavy-hole subband) to the sum of the "allowed" transition (the first electron subband to the first heavy-hole subband) and the forbidden transition. And electron mobilities decreased with increasing product of the average full width at half maximum of allowed and forbidden transitions and the electron effective mass in the InxGa1-xAs quantum well. These results show that PL measurements are a good supplemental tool to Hall-effect measurements in optimization of the HEMT layer structure. (c) 2006 American Institute of Physics.

Evolution of the Ordos Plateau and environmental effects

IEECAS SKLLQG

The effects of the last glacial paleo-aeolian sands on desertification in northern China

IEECAS SKLLQG

Slow highly charged ions induced electron emission from clean Si surfaces

The electron emission yields from the interaction of slow highly charged ions (SHCI) He2+, O2+ and Ne2+ with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E-p/M-p, ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O2+ and Ne2+) than for light ion (He2+). For O2+ and Ne2+, gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O2+ and Ne2+ between lower and higher projectile kinetic energy.

Crystallization and melting behavior of nylon 66 poly(ether imide) blends

Isothermal crystallization and melting behavior of nylon 66 and its blends with poly(ether imide) (PEI) were investigated by differential scanning calorimetry. Crystallization kinetics such as overall rate constant Z and index n were calculated according to Avrami approach. Crystallization in the blend was retarded with respect to that of pure nylon 66 by incorporation of PEI with high glass transition temperature (T-g). The lowest growth rate of the spherulites was observed in the blends containing 10 and 15 wt% fraction of PEI. A transition temperature where positively birefringent spherulites disappear and negative birefringent spherulites develop was measured by thermal analysis. The transition temperature increased with content of PEI in the blends. A suitable range of isothermally crystallization temperatures, 238.5-246 degrees C, is suggested For determining the equilibrium melting points by means of Hoffman-Weeks approach.