Comparison of laser performances of 5at.% Yb : Gd2xY2(1-x)SiO5 crystals between different cutting directions

We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x = 0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9 W. In contrast, the sample cut parallel reaches only 1.65 W at 1044 nm with a slope elLiciency of 33.76% with absorbed pump power of 7.99 W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68 nm to 1084.82 nm.

激光二极管抽运的国产Yb:YAG陶瓷激光器

研究了国产Yb:YAG陶瓷的激光输出特性。激光器采用激光二极管(LD)纵向同轴抽运Yb:YAG陶瓷样品,样品的掺杂原子数分数为1%,一端面镀940 nm和1030 nm双增透膜,另一端面镀1030 nm增透膜,激光器在1031 nm处获得了近红外激光输出。实验中分别测试了Yb:YAG陶瓷在不同输出透射率(T=4%,8%,10%)条件下的激光输出特性。整个实验过程中,激光器维持基横模运转。当输出透射率为10%,吸收的抽运功率为9 W时,激光器获得最大的激光输出功率为1.63 W,相应的斜率效率为23.2%。

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Gamma-ray induced color centers in Yb : YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe3+ and Yb3+ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe3+ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe3+, Fe2+, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe2+ ions and F-type color centers. The transition Yb3+ Yb2+ takes place as an effect of recharging of one of the Yb3+ ions from a pair in the process of gamma irradiation. (C) 2006 Elsevier Ltd. All rights reserved.

单纵模相移DFB掺Yb3+光纤激光器运行特性的研究

对我们所制作的λ/4相移DFB掺Yb3+光纤激光器的运行特性进行了研究。研究表明：光纤端面菲涅尔反射会破坏激光器的单纵模运行,因此为获得稳定的羊纵模运行须使用隔离器或甘油清除光纤端面菲涅尔反射；机械扰动则会使沿光纤传输的单偏振激光的偏振面发生变化；温度的涨落则会引起激光输出功率的不稳定涨落。所研制à/4相移DFB单纵模、单偏振激光器具有如下特性：阈值为38mW,当泵浦功率为140 mW时,获得了25mW的1053 nm单 纵模、羊偏振激光.偏振消光比约30 dB,单纵模激光功率涨落小于2%,边模抑制比约6

调Q及连续掺Yb光纤激光器中的自锁模研究

在用半导体激光器抽运的单包层掺Yb调Q光纤激光器中观察到了清晰稳定的自锁模脉冲序列。脉冲包络形状为调Q脉冲。每个锁模脉冲的幅值由其在调Q脉冲中的相应位置决定。经过分析，认为自相位调制是调Q光纤激光器中产生锁模的主要原因。自相位调制的存在使得光脉冲的频谱被展宽，当这种展宽和腔的模式间隔相差不多时，腔内的模式便能相互作用，直到它们之间产生一个固定的相位关系。也即形成锁模。在此基础上。去掉声光晶体，并用两个光栅作为腔镜，实现了全光纤法布里-珀罗(F-P)腔锁模光纤激光器。改变腔结构，分别采用光栅和光纤反射圈作为

一种制作掺Yb相移光纤光栅激光器的实验方案

采用遮挡法引入相移制作了掺Yb相移光纤光栅(PS-FBG)。在制作光栅的过程中,将其作为激光器的谐振腔,通过监测激光器的输出功率来确定相移大小。当激光器的输出功率开始下降时,停止曝光,此时引入的相移为π/2。为了使光栅的特性尽快稳定下来需要对光栅进行退火,这将导致引入的相移小于π/2。为了弥补退火过程中引起的相移降低,需要对退火后的光栅进行二次曝光,以使光栅的相移恢复π/2。利用该方法制作了一只光纤光栅激光器。当抽运功率为100 mW时,获得了25 mW的输出功率,信噪比(SNR)为60 dB。在1 h内