γ-辐照对纯Y2SiO5和Eu^3＋：Y2SiO5晶体光谱性能的影响

研究了γ-辐照前后纯Y2SiO5和Eu^3＋掺杂的Y2SiO5晶体吸收光谱的变化，辐照后，未退火和氢气退火的纯Y2SiO5晶体在260-270nm和320nm波段产生了附加吸收峰，分别是由F心和O^-心的吸收引起的；经过空气退火的纯YSO晶体中，由于消除了氧空位，因此辐照后没有出现色心吸收峰。在Eu^3＋；Y2SiO5晶体中，不但有相同的F心和O心吸收峰，而且还有Eu^2＋离子在300nm和390nm的吸收峰。随着辐照剂量的增加，色心附加吸收峰增强。空气退火能减少Eu^3＋：Y2SiO5晶体中的色心，而氢

Study on the growth, etch morphology and spectra of Y2SiO5 crystal

Undoped Y2SiO5 single crystal was grown by the Czochralski method. The samples were optically polished after orienting and cutting. The rhombus and quadrangular dislocation etching pits, the low-angle grain boundaries and the inclusions in the samples were observed using optical microscope and scanning electron microscope. The absorption spectra were measured before and after H-2 annealing or air annealing. The absorption edge of Y2SiO5 crystal was determined to be about 202 nm. The absorption coefficient of Y2SiO5 crystal decreased after H-2 annealing and obviously increased after air annealing. (C) 2005 Elsevier B.V. All rights reserved.

Effect of annealing and gamma irradiation on undoped and Eu3+-doped Y2SiO5 single crystals

The absorption spectra of the undoped Y2SiO5 and Eu3+-doped Y2SiO5 crystals grown by the Czochralski technique were compared before and after annealing and, similarly, the unannealed and annealed crystals after gamma-ray irradiation. The absorption bands of Eu2+ ions with peaks at 300 and 390 nm were observed in the as-grown Y2SiO5:Eu3+ crystal. These peaks were more intense in H-2-annealed and irradiated Y2SiO5:Eu3+ crystals. The additional absorption peaks at 260 and 320-330 nm which were attributed to F color centers and O- hole centers were observed in irradiated undoped Y2SiO5 and Y2SiO5:Eu3+ crystals, respectively. (c) 2005 Elsevier B.V. All rights reserved.

Effect of gamma-irradiation on spectral properties of undoped Y2SiO5 crystals

The absorption spectra of undoped Y2SiO5 crystals were studied before and after gamma-irradiation. After gamma-irradiation, the additional absorption peaks at 260-270 and 320nm were observed in as-grown and H,annealed Y2SiO5 crystal, but it did not occur in air-annealed Y2SiO5 crystal. These absorption peaks were attributed to F color centers and O- hole centers, respectively. Owing to more oxygen vacancies and color centers in H-2-annealed Y2SiO5 crystal than that in as-grown Y2SiO5 crystal after gamma-irradiation, the additional absorption peaks were more intense in the former than that in the latter. With the irradiation dose increasing from 20 to 220kGy, the intensity of additional absorption peaks increased.

Spectral hole-burning of Eu3+: Y2SiO5 crystal at 579.62 mm

By using an Ar+ ion laser, a tunable Rh 6G dye laser(Linewidth : 0.5 cm(-1)) and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu3+ : Y2SiO5 crystal were detected. Persistent spectral hole burning (PSHB) were also observed in (5)Do-(7)Fo transition in the crystal at the temperature of 16 K. For 15 mW dye laser (Wavelength : 579.62 nm) burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.

579．62nm波长处Y2SiO5：Eu^3＋晶体永久性光谱烧孔

分别利用氩离子激光，二倍频YAG：Nd激光泵浦的诺明6G可调谐窄线宽（0．5cm^-1）染料激光和899-21可调谐染料激光作为光源，以单色仪-锁相放大器-光电倍增管-计算机数据采集系统记录光谱，对Y2SiO5：Eu^3＋晶体进行了光谱和光谱烧孔研究。在常温和液氮温度下测量了晶体的激发光谱、荧光光谱等。在16K温度下对晶体进行了光谱烧孔研究，得到了孔宽约80MHz并能保存10h的永久性光谱孔。

One-Dimensional Ce3+- and/or Tb3+-Doped X-1-Y2SiO5 Nanofibers and Microbelts: Electrospinning Preparation and Luminescent Properties

One-dimensional X-1-Y2SiO5:Ce3+ and -Tb3+ nanofibers and quasi-one-dimensional X-1-Y2SiO5:Ce3+ and -Tb3+ microbelts have been prepared by a simple and cost-effective electrospinning process. X-ray powder diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry, transmission electron microscopy, high-resolution transmission electron microscopy, photoluminescence (PL), and cathodoluminescence spectra were used to characterize the samples. SEM results indicate that the as-prepared fibers and belts are smooth and uniform with a length of several tens to hundreds of micrometers, whose diameters decrease after being annealed at 1000 degrees C for 3 h. Under ultraviolet excitation and low-voltage electron beam excitation, the doped rare earth ions show their characteristic emission, that is, Ce3+ 5d-4f and Tb3+ D-5(4)-F-7(J) (J = 6, 5 4, 3) transitions, respectively.

Fabrication, patterning and luminescence properties of X-2-Y2SiO5 : A (A = Eu3+, Tb3+, Ce3+) phosphor films via sol-gel soft lithography

X-2-y(2)SiO(5):A (A = Eu3+, Tb3+, Ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with a soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM), scanning electron microscopy (SEM) optical microscopy and photoluminescence (PL) were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 900 degreesC with X-1-Y2SiO5, which transformed completely to X-2-Y2SiO5 at 1250 degreesC. Patterned thin films with different band widths (5 pin spaced by 5 pm and 16 pm spaced by 24 pm) were obtained by a soft lithography technique (micromoulding in capillaries, MIMIC). The SEM and AFM study revealed that the nonpattemed phosphor films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 350 run. The doped rare earth ions (A) showed their characteristic emissions in X-2-Y2SiO5 phosphor films, i.e., D-5(0)-F-7(J) (J = 0, 1, 2,3,4) for Eu3+, D-5(3), (4)-F-7(J) (J = 6, 5, 4, 3) for Tb3+ and 5d (D-2)-4f (F-2(2/5),(2/7)) for Ce3+, respectively. The optimum doping concentrations for EU3+, Tb3+ were determined to be 13 and 8 mol% of Y3+ in X-2-Y2SiO5 films, respectively.

Silica supported submicron SiO2@Y2SiO5 : Eu3+ and SiO2@Y2SiO5 : Ce3+/Tb3+ spherical particles with a core-shell structure: Sol-gel synthesis and characterization

X-1-y(2)SiO(5):Eu3+ and X-1-Y2SiO5:Ce3+ and/or Tb3+ phosphor layers have been coated on nonaggregated, monodisperse, submicron spherical SiO2 particles by a sol-gel process, followed by surface reaction at high temperature (1000 degrees C), to give core/shell structured SiO2@Y2SiO5:Eu3+ and SiO2@Y2SiO5:Ce3+/Tb3+ particles. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), TEM, photoluminescence (PL), low voltage cathodoluminescence (CL), and time-resolved PL spectra and lifetimes are used to characterize these materials. The XRD results indicate that X-1-Y2SiO5 layers have been successfully coated on the sur- face Of SiO2 particles, as further verified by the FESEM and TEM images. The PL and CL studies suggest that SiO2@Y2SiO5:Eu3+, SiO2@Y2SiO5:Tb3+ (or Ce3+/Tb3+), and SiO2@Y2SiO5:Ce3+ core/shell particles exhibit red (Eu3+, 613 rim: D-5(0)-F-7(2)), green (Tb3+, 542nm: D-5(4)-F-7(5)), or blue (Ce3+, 450nm: 5d-4f) luminescence, respectively. Pl, excitation, emission, and time-resolved spectra demonstrate that there is an energy transfer from Ce3+ to Tb3+ in the SiO2@Y2SiO5:Ce3+,Tb3+ core/shell particles.

Influence of crystal structure on the luminescence properties of bismuth(III), europium(III) and dysprosium(III) in Y2SiO5

The luminescence properties of Bi3+, EU(3+), Dy3+ and energy transfer from Bi3+ to Dy3+ and EU(3+) have been studied in two modifications of Y2SiO5 (low-temperature X(1) type and high-temperature X(2) type) and discussed in relation to their crystal structures. The Bi3+ ion luminesces in the blue region of the spectrum in X(1)-Y2SiO5 but in the UV region in X(2)-Y2SiO5. Two obviously different luminescent centres have been observed for Bi3+ and Eu3+ ill X(1)-Y2SiO5, but only one has been seen in X(2)-Y2SiO5. The Stokes shift (9200 cm(-1)) for Bi3+ in X(1)-Y2SiO5 is much larger than that (5000 cm(-1)) in X(2)-Y2SiO5. This suggests that the host lattice is more rigid in X(2)-Y2SiO5 than in X(1)-Y2SiO5. As a result, the Bi3+, EU(3+) and Dy3+ ions show higher emission intensity in the former than in the latter type. X(1)-Y2SiO5 is more suitable for Bi3+ --> EU(3+) energy transfer and X(2)-Y2SiO5 is more suitable for Bi3+ --> Dy3+ energy transfer.

Crystal structure dependence of the luminescence of rare earth ions (Ce3+, Tb3+, Sm3+) in Y2SiO5

The luminescence properties of Ce3+, Tb3+, Sm3+ and energy transfer from Ce3+ to Tb3+ were studied in two modifications of Y2SiO5 (low temperature X(1) type and high temperature X(2) type). The Ce3+ cation shows lower emission energy and larger Stokes shift in X(1)-Y2SiO5 than in X(2)-Y2SiO5, and the emission intensities of Ce3+, Tb3+, Sm3+ in the former are weaker than those in the latter. There exists an energy transfer from Ce3+ to Tb3+ in both types of Y2SiO5, and the transfer efficiency in X(2) type is higher than that in X(1) type. All of these results are discussed in relation to the crystal structure of Y2SiO5.

用半导体激光器对 Yb3+:LYSO 晶体的高效率激光特性的研究

本文报导了采用半导体激光器泵浦的高效连续可调谐Yb:LYSO激光器的输出特性。LYSO晶体同时具有LSO晶体良好的激光性能和YSO晶体易于生长且成本低廉的优点，实验中我们采用5at%掺杂的Yb:LYSO晶体进行研究，获得了最大输出功率2.84W、输出波长1085nm、光-光转换效率54.5%的高效输出。并且得到了1030-1111nm，一共81nm的波长调谐范围，这是目前我们所知道的从Yb:LYSO激光器获得的最宽的调谐输出。

Simultaneous three-photon absorption induced ultraviolet upconversion in Pr3+:Y2SiO5 crystal by femtosecond laser irradiation

Near-infrared to ultraviolet upconversion luminescence was observed in the Pr3+ :Y2SiO5 crystal with 120 fs, 800 mn infrared laser irradiation. The observed emissions at around 270 nm and 305 nm could be assigned to 5d -> 4f transitions of Pr3+ ions. The relationship between the upconversion luminescence intensity and the pump power of the femtosecond laser reveals that the UV emission belongs to simultaneous three-photon absorption induced upconversion luminescence. (c) 2007 Elsevier B.V. All rights reserved.

Tunable and efficient diode-pumped Yb3+: GYSO laser

Effective diode-pumped cw tunable laser action of a new alloyed crystal Yb:Gd(2(1-)x) Y2xSiO5 (Yb:GYSO, x = 0.5) is demonstrated for the first time. The alloyed crystal retains excellent laser properties of Gd2SiO5 (GSO), as well as the favorable growth properties and the desirable physical of Y2SiO5 (YSO). With a 5-at.% Yb: GYSO sample, we achieved 2.44 W output power at 1081.5 nm and a slope efficiency of 57%. And its laser wavelength could be tuned from 1030nm to 1089 nm. (c) 2006 Optical Society of America.

硅酸钇晶体的生长、腐蚀形貌和光谱性能研究

本文采用中频感应提拉法成功生长了未掺杂的Y2SiO5(YSO)晶体，经过定向、切割、抛光后得到样品。经过腐蚀后，利用大视场显微镜和扫描电镜在样品表面上观察到了菱形和四边形的位错蚀坑、小角晶界和包裹物等缺陷；测试了经过氢气、空气退火前后，辐照前后YSO晶体的透过谱，结果表明：YSO晶体的吸收边大约在202nm，氢气退火后在200～300nm波段透过率增加，空气退火后透过率显著降低；辐照后，氢气退火的样品在200～500nm波段透过率显著降低。