Study of GaN epilayers growth on freestanding Si cantilevers

Five-micron thick freestanding Si cantilevers were fabricated on bulk Si (1 1 1) substrates with surface/bulk micromachining (SBM) process. Then 1-mu m thick GaN layers were deposited on the Si cantilevers by metal-organic chemical vapor deposition (MOCVD). Epilayers on cantilever areas were obtained crack-free, and the photoluminescence (PL) spectra verified the stress reduction and better material quality in these suspended parts of GaN. Back sides of the cantilevers were also covered with GaN layers, which prevented the composite beams from bending dramatically. This paper had proved the feasibility of integrating high-quality GaN epilayers with Si micromechanical structures to realize GaN-based micro electro-mechanical system (MEMS). (C) 2009 Elsevier Ltd. All rights reserved.

Experimental relaxation behavior of chopped-strand mat glass-fiber reinforced polyester beams in 3 point bending

A dimensionless relation of the form for collating fatigue crack starting growth data is proposed in which Δkth represents the stress intensity factor range at the threshold. Based on experimental results, this relation attains the value of 0.6 for a fatigue crack to start growth in the Austenitic stainless steel investigated in this work. Metallurgical examinations were also carried out to show a transgranular shear mode of cyclic cleavage and plastic shear.