Bubble Dynamics In Nucleate Pool Boiling On Thin Wires In Microgravity

A temperature-controlled pool boiling (TCPB) device has been developed to study the bubble behavior and heat transfer in pool boiling phenomenon both in normal gravity and in microgravity. A thin platinum wire of 60 mu m in diameter and 30 mm in length is simultaneously used as heater and thermometer. The fluid is R113 at 0.1 MPa and subcooled by 26 degrees C nominally for all cases. Three modes of heat transfer, namely single-phase natural convection, nucleate boiling, and two-mode transition boiling, are observed in the experiment both in microgravity aboard the 22nd Chinese recoverable satellite and in normal gravity on the ground before and after the space flight. Dynamic behaviors of vapor bubbles observed in these experiments are reported and analyzed in the present paper. In the regime of fully developed nucleate boiling, the interface oscillation due to coalescence of adjacent tiny bubbles is the primary reason of the departure of bubbles in microgravity. On the contrary, in the discrete bubble regime, it's observed that there exist three critical bubble diameters in microgravity, dividing the whole range of the observed bubbles into four regimes. Firstly, tiny bubbles are continually forming and growing on the heating surface before departing slowly from the wire when their sizes exceed some value of the order of 10(-1) mm. The bigger bubbles with about several millimeters in diameter stay on the wire, oscillate along the wire, and coalesce with adjacent bubbles. The biggest bubble with diameter of the order of 10 mm, which was formed immediately after the onset of boiling, stays continuously

Torsion fracture behavior of drawn pearlitic steel wires with different heat treatments

In this paper, torsion fracture behavior of drawn pearlitic steel wires with different heat treatments was investigated. Samples with different heat treatments was investigated. Samples with different heat treatment conditions were subjected to torsion and tensile tests. The shear strain along the torsion sample after fracture was measured. Fracture surface of wires was examined by Scanning Electron Microscopy. In addition, the method of Differential Scanning Calorimetry was used to characterize the thermodynamic process in the heat treatment. A numerical simulation via finite element method on temperature field evolution for the wire during heat treatment process was performed. The results show that both strain aging and recovery process occur in the material within the temperature range between room temperature and 435 degrees C. It was shown that the ductility measured by the number of twists drops at short heating times and recovers after further heating in the lead bath of 435 degrees C. On the other hand, the strenght of the wire increases at short heating times and decreases after further heating. The microstructure inhomogeneity due to short period of heat treatment, coupled with the gradient characteristics of shear deformation during torsion results in localized shear deformation of the wire. In this situation, shear cracks nucleate between lamella and the wire breaks with low number of twists.

Lateral motion and departure of vapor bubbles in nucleate pool boiling on thin wires in microgravity

A space experiment on bubble behavior and heat transfer in subcooled pool boiling phenomenon has been performed utilizing the temperature-controlled pool boiling (TCPB) device both in normal gravity in the laboratory and in microgravity aboard the 22(nd) Chinese recoverable satellite. The fluid is R113 at 0.1 MPa and subcooled by 26 degrees C nominally. A thin platinum wire of 60 mu m in diameter and 30mm in length is simultaneously used as heater and thermometer. Only the lateral motion and the departure of discrete vapor bubbles in nucleate pool boiling are reported and analyzed in the present paper. A scale analysis on the Marangoni convection surrounding a bubble in the process of subcooled nucleate pool boiling leads to formulas of the characteristic velocity of the lateral motion and its observability. The predictions consist with the experimental observations. Considering the Marangoni effect, a new qualitative model is proposed to reveal the mechanism underlying the bubble departure processes and a quantitative agreement can also be acquired.

Dynamics of discrete bubble in nucleate pool boiling on thin wires in microgravity

A space experiment on bubble behavior and heat transfer in subcooled pool boiling phenomenon has been performed utilizing the temperature-controlled pool boiling (TCPB) device both in normal gravity in the laboratory and in microgravity aboard the 22(nd) Chinese recoverable satellite. The fluid is degassed R113 at 0.1 MPa and subcooled by 26 degrees C nominally. A thin platinum wire of 60 mu m in diameter and 30 mm in length is simultaneously used as heater and thermometer. Only the dynamics of the vapor bubbles, particularly the lateral motion and the departure of discrete vapor bubbles in nucleate pool boiling are reported and analyzed in the present paper. It's found that these distinct behaviors can be explained by the Marangoni convection in the liquid surrounding vapor bubbles. The origin of the Marangoni effect is also discussed.

Guiding neutral atoms with two current-carrying wires and a vertical bias field on the atom chip

We demonstrate the guiding of neutral atoms with two parallel microfabricated current-carrying wires on the atom chip and a vertical magnetic bias field. The atoms are guided along a magnetic field minimum parallel to the current-carrying wires and confined in the other two directions. We describe in detail how the precooled atoms are efficiently loaded into the two-wire guide. We present a detailed experimental study of the motional properties of the atoms in the guide and the relationship between the location of the guide and the vertical bias field. This two-wire guide with vertical bias field can be used to realize large area atom interferometer.

Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots

On the basis of the density functional theory (DFT) within local density approximations (LDA) approach, we calculate the band gaps for different size SnO2 quantum wire (QWs) and quantum dots (QDs). A model is proposed to passivate the surface atoms of SnO2 QWs and QDs. We find that the band gap increases between QWs and bulk evolve as Delta E-g(wire) = 1.74/d(1.20) as the effective diameter d decreases, while being Delta E-g(dot) = 2.84/d(1.26) for the QDs. Though the similar to d(1.2) scale is significantly different from similar to d(2) of the effective mass result, the ratio of band gap increases between SnO2 QWs and QDs is 0.609, very close to the effective mass prediction. We also confirm, although the LDS calculations underestimate the band gap, that they give the trend of band gap shift as much as that obtained by the hybrid functional (PBE0) with a rational mixing of 25% Fock exchange and 75% of the conventional Perdew-Burke-Ernzerhof (PBE) exchange functional for the SnO2 QWs and QDs. The relative deviation of the LDA calculated band gap difference Lambda E-g compared with the corresponding PBE0 results is only within 5%. Additionally, it is found the states of valence band maximum (VBM) and conduction band minimum (CBM) of SnO2 QWs or QDs have a mostly p- and s-like envelope function symmetry, respectively, from both LDA and PBE0 calculations.

Electrically controllable RKKY interaction in semiconductor quantum wires

We demonstrate in theory that it is possible to all-electrically manipulate the RKKY interaction in a quasi-one-dimensional electron gas embedded in a semiconductor heterostructure, in the presence of Rashba and Dresselhaus spin-orbit interaction. In an undoped semiconductor quantum wire where intermediate excitations are gapped, the interaction becomes the short-ranged Bloembergen-Rowland superexchange interaction. Owing to the interplay of different types of spin-orbit interaction, the interaction can be controlled to realize various spin models, e.g., isotropic and anisotropic Heisenberg-like models, Ising-like models with additional Dzyaloshinsky-Moriya terms, by tuning the external electric field and designing the crystallographic directions. Such controllable interaction forms a basis for quantum computing with localized spins and quantum matters in spin lattices.

Interference in transport through double barriers in interacting quantum wires

We investigate interference effects of the backscattering current through a double-barrier structure in an interacting quantum wire attached to noninteracting leads. Depending on the interaction strength and the location of the barriers, the backscattering current exhibits different oscillation and scaling characteristics with the applied voltage in the strong and weak interaction cases. However, in both cases, the oscillation behaviors of the backscattering current are mainly determined by the quantum mechanical interference due to the existence of the double barriers.

Epitaxial Semiconductor Quantum Wires

The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires

We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.

Variational calculations of neutral bound excitons in GaAs quantum-well wires

The binding energy of an exciton bound to a neutral donor (D-0,X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.

Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)

Six-stacked InAs/In0.52Al0.48As self-assembled quantum wires (QWRs) on InP(001) by molecular-beam epitaxy (MBE) have been studied by high-resolution transmission electron microscopy (HRTEM) and polarized PL measurements. We obtained the chemical lattice fringe (CLF) image of InAs self-assembled QWRs embedded in the In0.52Al0.48As matrix by the interference between the (002)-diffracted beam and the transmitted beam in the image plane of the objective lens. The results show that the InAs QWRs were bounded by (113), (001) and (114) facets. Both the size and strain distribution in QWRs were determined. It was found that with the growth of successive periods, the height and height fluctuation of InAs QWRs decreased from the bottom period to the upper one. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs. (c) 2005 Elsevier B.V. All rights reserved.

Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

We have studied the effect of the post-growth rapid thermal annealing on optical and electrical properties of InAs/InAlAs/InP quantum wires with various InAs deposited thickness. Quite different annealing behaviors in photoluminescence and dark resistance are observed, which can be attributed to dislocations in samples. After annealing at 800 degrees C, quantum wires still exist in the sample with two monolayer InAs deposited thickness, but the temperature-dependent PL properties are changed greatly due to the intermixing of In/Al atoms. (c) 2005 Elsevier B.V. All rights reserved.

Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires

The phonons of self-assembled InAs/InAlAs/InP quantum wires (QWRs) have been studied by Raman scattering. The QWR LO phonons show an unusual frequency shift with the increase of the InAs deposited thickness due to dislocations. The QWR LO phonons are found to follow the selection rule of the LO phonons in bulk zinc-blende semiconductors. Because of the intermixing of In/Al atoms and the multiplication of dislocations, the post-growth thermal annealing treatment leads to a shift of the QWR LO phonons to lower frequency.

Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices

Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAs superlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge of AlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching. By just growing 2.0 ML InAs without high temperature degassing, site-controlled InAs quantum wires were fabricated on the cleaved edge. Furthermore, atomic force microscopy demonstrates the diffusion of In atoms is strong toward the [00 (1) over bar] direction on the (110) surface.