Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.

贵州水银洞卡林型金矿床含金硫化物地球化学与金的赋存状态研究

　　以沉积岩为主要容矿岩石的卡林型金矿，是目前世界上储量最大的金矿类型之一，金“不可见”或其颗粒极细（纳米级）是该类型金矿最重要的特点之一。国内外大量研究已经证实，金主要赋存在含砷黄铁矿中，但金的赋存形式仍然是目前争论的焦点和研究的热点。贵州水银洞金矿床位于灰家堡背斜Au-Hg-Tl矿田的东段，是黔西南地区发现较晚、品位较富（6～18 g/t）的大型（55 t）隐伏卡林型金矿床，并已大规模开采利用，结束了我国卡林型金矿原生矿石不能开发利用的历史。 　　本次研究在系统显微岩相学研究的基础上，采用电子探针（EMPA）背散射电子图像（BSE）、波谱（WDS）和能谱（EDS）分析技术，对水银洞卡林型金矿床原生富矿石中不同类型含砷黄铁矿和毒砂的矿物学、地球化学以及金的赋存状态等进行了较系统的研究，取得的主要认识如下： 1. 水银洞金矿床原生矿石具有去碳酸盐化（Decarbonation）、硅化、硫化物化（Sulfidation）等典型卡林型金矿的热液蚀变特征。原生矿石中的主要载金矿物为含砷黄铁矿，其次为毒砂。 2. 根据含砷黄铁矿和毒砂的形态和结构特征，将含砷黄铁矿分为生物碎屑状含砷黄铁矿、细粒含砷黄铁矿、环带状含砷黄铁矿和细脉状含砷黄铁矿四种类型；毒砂分为板状毒砂和针状毒砂两种类型。毒砂晚于含砷黄铁矿的形成。 3. 电子探针分析表明，含砷黄铁矿中含有较高的Au，一般为300×10-6～3800×10-6，含有As 0.65～14.11 wt%、Sb 0.03～0.12 wt%、Co 0.03～0.08 wt%等元素。毒砂含Au较低，一般为300×10-6～1500 ×10-6。 4. 研究表明，含砷黄铁矿中的As与S含量具有明显的负相关关系，认为As替代S进入含砷黄铁矿和毒砂的结构；Au与As之间不是一种简单的线形正相关关系，而是分布在一个的楔形空间。结合前人的研究结果，认为含砷黄铁矿中的“不可见金”，可能主要以化学结合态金（Au1+）的形式进入含砷黄铁矿和毒砂结构。 5. 金的赋存状态研究表明，水银洞卡林型金矿床发现有两种金的赋存形式：（1）“不可见金”，主要赋存在黄铁矿的含砷环带之中；（2）次显微—显微自然金颗粒（0.1～6μm），主要见于含砷黄铁矿细脉或其集合体。这些自然金颗粒也有两种赋存形式：① 粗粒自然金颗粒（1～6μm），主要分布于早世代粗粒含砷黄铁矿颗粒的表面或晚世代细粒含砷黄铁矿颗粒的边缘，偶见于含Fe碳酸盐矿物的溶蚀空洞中，被解释为热液中的Au局部过饱和的产物；②细粒自然金颗粒（0.1～0.2μm），偶见于早世代粗粒含砷黄铁矿的含砷环带或其溶蚀空洞的边缘，被解释为黄铁矿含砷环带中的Au再溶解过饱和沉淀的产物。 6. 根据原生矿石显微岩相学结构、含砷黄铁矿矿物学与地球化学特征，探讨了含金—砷黄铁矿的形成过程，认为含砷黄铁矿中的Fe，可能主要来源于赋矿围岩中的含Fe碳酸盐矿物（方解石和白云石）溶解而释放的Fe，溶解Fe的硫化物化过程是水银洞卡林型金矿富集成矿的重要机制之一。 7. 结合野外地质观察，认为含Fe碳酸盐赋矿围岩是形成高品位、大型卡林型金矿床最有利的岩性，并提出了与去碳酸盐化有关的碳酸盐脉，是寻找深部隐伏卡林型金矿体的重要找矿标志之一。