A new method of Laminaria japonica strain selection and sporeling raising by the use of gametophyte clones

One-celled female and male gametophytes of three Laminaria japonica strains were isolated, cultured and gametophyte clones were formed. A technique combining strain selection with sporeling raising by the use of these female and male gametophyte clones was studied. Experiments on 9 different crossing combinations was conducted in November of 1997 in Qingdao, P. R. China. The main economic characteristics, frond length and fresh weight, of sporophytes of different crossing combinations were measured. F-1 sporophytes of No. 2 showed a higher fresh weight and longer length, therefore, No. 2 (Wh860 + x Lid) was selected as a good combination. Its parental female and male gametophyte clones are being mass cultured for sporeling production. By this method, the time needed for strain selection was shortened from 5-6 to 2 years. As compared with the routine method of sporeling raising by the collection of zoospores, the time of sporeling raising of this method decrease by 50%, and the production cost is also reduced by 50%. It is believed that this method will be labour and time saving and a more economic way for strain selection and sporeling raising in L. japonica cultivation industry.

A pseudo-plastic engagement effect on the toughening of discontinuous fiber-reinforced brittle composites

In brittle composites, such as whisker reinforced ceramics, the sliding of reinforcing fibers against the frictional resistance of matrix is of a pseudo-plastic deformation mechanism. High aspect-ratio whiskers possess larger pseudo-plastic deformation ability but are usually sparse, while, low aspect-ratio ones were distributed widely in the matrix and show low pseudo-plastic deformation ability (engagement effect), also. A comparative investigation was carried out in present study based on a multi-scale network model. The results indicate that the effect of low aspect-ratio whiskers is of most importance. Improving the engagement coefficient by raising the compactness of material seems a more practical way for optimization of discontinuous fiber-reinforced brittle composites in the present technological condition.

A generalized wave action conservative equation for the dissipative dynamical system in the nearshore region

To describe the various complex mechanisms of the dissipative dynamical system between waves, currents, and bottoms in the nearshore region that induce typically the wave motion on large-scale variation of ambient currents, a generalized wave action equation for the dissipative dynamical system in the nearshore region is developed by using the mean-flow equations based on the Navier-Stokes equations of viscous fluid, thus raising two new concepts: the vertical velocity wave action and the dissipative wave action, extending the classical concept, wave action, from the ideal averaged flow conservative system into the real averaged flow dissipative system (that is, the generalized conservative system). It will have more applications.

Dynamical symmetry of screened Coulomb potential and isotropic harmonic oscillator

It is shown that for the screened Coulomb potential and isotropic harmonic oscillator, there exists an infinite number of closed orbits for suitable angular momentum values. At the aphelion (perihelion) points of classical orbits, an extended Runge-Lenz vector for the screened Coulomb potential and an extended quadrupole tensor for the screened isotropic harmonic oscillator are still conserved. For the screened two-dimensional (2D) Coulomb potential and isotropic harmonic oscillator, the dynamical symmetries SO3 and SU(2) are still preserved at the aphelion (perihelion) points of classical orbits, respectively. For the screened 3D Coulomb potential, the dynamical symmetry SO4 is also preserved at the aphelion (perihelion) points of classical orbits. But for the screened 3D isotropic harmonic oscillator, the dynamical symmetry SU(2) is only preserved at the aphelion (perihelion) points of classical orbits in the eigencoordinate system. For the screened Coulomb potential and isotropic harmonic oscillator, only the energy (but not angular momentum) raising and lowering operators can be constructed from a factorization of the radial Schrodinger equation.

Phosphorus in interstitial water induced by redox potential in sediment of Dianchi Lake, China

The sediment redox potential was raised in the laboratory to estimate reduction of internal available phosphorus loads, such as soluble reactive phosphorus (SRP) and total phosphorus (TP), as well as the main elements of sediment extracts in Dianchi Lake. Several strongly reducing substances in sediments, which mainly originated from anaerobic decomposition of primary producer residues, were responsible for the lower redox potential. In a range of -400 to 200 mV raising the redox potential of sediments decreased TP and SRP in interstitial water. Redox potentials exceeding 320 mV caused increases in TP, whereas SRP maintained a relatively constant minimum level. The concentrations of Al, Fe, Ca2+, Mg2+, K+, Na+ and S in interstitial water were also related to the redox potential of sediments, suggesting that the mechanism for redox potential to regulate the concentration of phosphorus in interstitial water was complex.

Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al2O3 substrate at room temperature (RT) and 400degreesC. Both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin filius were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction. (C) 2004 Elsevier B.V. All rights reserved.

Improving the optical profile of electroabsorption modulator using single-sided large optical cavity structure

An electroabsorption modulator with large optical cavity was designed and fabricated successfully. Both the simulated and experimental results show that, the larger optical cavity structure introduced could obviously improve the optical profile of EA modulator, the traditional elliptical near-field spot becomes more rounded, so it will match better with the optical fiber and is beneficial for raising the coupling efficiency.

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

干旱胁迫下本氏针茅光合特性和水分利用效率日动态研究

采用盆栽和人工控制土壤水分的方法,使用Li-6400便携式光合测定系统观测本氏针茅(Stipa bungeana)光合生理生态特征的日变化。结果表明:在不同土壤水分状况下,本氏针茅净光合速率日变化曲线均呈"双峰"型,并有不同程度的"午休"现象,且上午的净光合速率明显高于下午,随着土壤水分的升高而增加;蒸腾速率日变化曲线也呈"双峰"型,表现为较高土壤水分处理针茅具有较高的蒸腾速率;气孔导度受水分和光热胁迫的影响,日变化曲线呈凹型;胞间CO2浓度受空气CO2浓度和气孔导度的双重影响,呈现早晚高,正午低的日变化进程;水分利用效率最高值出现在上午较早的时段,随着土壤水分的增加,水分利用效率却降低。

中国畜牧业现状与可持续发展措施的研究

畜牧业是否成长为农村经济的支柱产业,是衡量一个国家农业发达程度的主要标志。现阶段.我国畜牧业的增长方式、发展路径、动力、市场和地位都发生了重大变化,给畜牧业的可持续发展提出了许多新问题和新挑战。近年来.我国畜牧业的发展取得了举世嘱目的成就,促进了国民经济的快速发展,丰富了城乡人民物质和文化生活的需要。随着经济的发展和人们生活水平的逐步提高.对畜牧产品的需求将有较大增长,大力加强和发展畜牧业将是我国农业的最终方向。依据现有统计资料,结合我国畜牧业的实际情况,根据"十一五"规划和建设社会主义新农村的要求,文章分析了畜牧业发展的地位,探讨了畜牧业存在的问题.并提出了相应的对策和建议。

日光温室豇豆产量和品质对水分和氮素水平的响应

依据在日光温室条件下的田间试验,研究了水分和氮素水平对豇豆产量和品质的影响,以期筛选较佳水分和氮素控制指标,为豇豆优质高产提供依据。结果表明:同一氮肥处理下,豇豆产量随土壤水分含量增加而显著增加,达到土壤相对含水量(RH)75%~85%时产量最高,豇豆高产较佳的水分和养分组合为:氮肥120 kg/hm2,壤RH为60%~85%。水分对豇豆鲜菜可溶性糖含量影响不明显;在水分充足条件下氮肥能提高豇豆的可溶性糖含量;水分有助于提高豇豆的Vc含量,水分、氮肥适宜豇豆可获得较高的Vc含量。豇豆硝酸盐含随施氮量增加显著增大。在氮素水平为60~120 kg/hm2条件下,水分对豇豆硝酸盐含量影响不明显,在氮素水平为180kg/hm2条件下,水分明显增加豇豆硝酸盐含量。按照蔬菜中硝酸盐含量安全标准,在氮水平为60~120 kg/hm2条件下豇豆的硝酸盐含量均在250 mg/kg以下,达到一级安全标准。氮水平120 kg/hm2是较佳的豇豆安全施肥量。综合考虑水分和氮肥对豇豆安全品质、营养品质以及产量的效应,建议豇豆生产中氮肥用量为120 kg/hm2左右,田间持水量保持在60%~85%。

ELECTRONIC AND MAGNETIC-STRUCTURE OF THE TERNARY COMPOUND ND2FE17N

The electronic and the magnetic structure of the Nd2Fe17N1 phase in the family of Nd-Fe-N ternary compounds have been calculated using the first-principles, spin-polarized orthogonalized linear-combination-of-atomic-orbitals method. Results are presented in the form of site-decomposed and spin-projected partial density of states. The occupation sites of the three N atoms are determined by an average radial distribution of all possible N site configurations. Both cases of N occupying the 3b and the 18g sites are studied. The results indicate that the 6c Fe sites have the maximum and the 18h Fe sites have the minimum local moments. This is in good agreement with experiment. It is concluded that the influence on the local moment due to lattice expansion is less important compared to that due to interatomic interaction between the N atom and its neighbors. The results also show the important role of N atoms in raising the Curie temperature of this compound.

Current oscillations and stable electric field domains in doped GaAs/AlAs superlattices

The crossover between two regimes has been observed in the vertical electric transport of weakly coupled GaAs/AlAs superlattices (SLs). At fixed d.c. bias, the SLs can be triggered by illumination to switch from a regime of temporal current oscillation to the formation of a stable electric field domain. The conversion can be reversed by raising the sample temperature to about 200 K. An effective carrier injection model is proposed to explain the conversion processes, taking into account the contact resistance originating from DX centres in the n(+)-Al0.5Ga0.5As contact layers which is sensitive to light illumination and temperature. In addition, quasiperiodic oscillations have been observed at a particular d.c. bias voltage.