Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors

A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.

High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter

We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq(3)/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes.

An organic-inorganic vanadium oxide with one-dimensional ladder-type structure: hydrothermal synthesis, structure and characterization of [V4O10(o-phen)(2)]

A novel organic-inorganic hybrid vanadium oxide [V4O10(o-phen)(2)], involving all vanadium atoms present in +5 oxidation, has been hydrothermally synthesized and characterized by elemental analysis, IR, UV-vis, ESR, XPS spectra and TG-DTA thermal analysis. The single-crystal X-ray diffraction shows that the red-brown crystal is formed in the triclinic system, space group P (1) over bar, a = 9.782(2), b = 6.5124(14), c = 19.765(4) Angstrom, alpha = 89.94(2)degrees, beta = 100.66(2)degrees, gamma = 89.86(2)degrees. The title compound exhibits an infinite one-dimensional ladder-type tetravanadate skeleton with organonitrogen donors of o-phenanthroline ligands coordinated directly to the vanadium oxide framework.

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

The synthesis and crystal structure of vanadium complexes: [(VO2)-O-IV(phen)(2)]center dot 6H(2)O and [2,2 '-(bipy)(2)(VO2)-O-V](H2BO3)center dot 3H(2)O

The organic-inorganic hybrid materials vanadium oxide [(VO2)-O-IV(phen)(2)](.)6H(2)O (1) and [(2,2'-bipy)(2)(VO2)-O-V](H2BO3)(.)3H(2)O (2) have been conventional and hydrothermal synthesized and characterized by single crystal X-ray diffraction, elemental analyses, respectively. Although the method and the ligand had been used in the syntheses of the compounds (1) and (2) are different, they almost possess similar structure. They all exhibit the distorted octahedral [VO2N4] unit with organonitrogen donors of the phen and 2,2'-bipy ligands, respectively, which coordinated directly to the vanadium oxide framework. And they are both non-mixed-valence complexes. But the compound (1) is isolated, and the compound (2) consists of a cation of [(2,2'-bipy)(2)(VO2)-O-V](+) and an anion of (H2BO3)(-). So the valence of vanadium of (1) and (2) are tetravalence and pentavalence, respectively. Meanwhile it is noteworthy that pi-pi stacking interaction between adjacent phen and 2,2'-bipy groups in compounds I and 2 also play a significant role in stabilization of the structure. Thus, the structure Of [(VO2)-O-IV(phen)(2)](.)6H(2)O and [(2,2'-bipy)(2)(VO2)-O-V](H2BO3)(.)3H(2)O are both further extended into interesting three-dimensional supramolecular.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage.

Nanotubes of mixed-valence, transition metal compounds synthesized by solution phase approach

A solution-phase approach to synthesize four kinds of mixed-valence, transition metal compounds nanotube is described. The approach is based on the self-assembly of siloxane sol. The resulted production of mixed-valence, transition metal compounds share a common structural characteristic of tubular geometrical morphology, at least for the ones we studied. The results demonstrate that the synthesis strategy can be a general route for preparation of compound nanotubes. In addition, the size control of nanotubular materials can be easily achieved through varying the ionic strength of solution. Based on the strategy, the diameters of ultrathin Ru-Fe nanotubes can be easily tuned between 100 nm and 800 nm.

Efficient top-emitting organic light-emitting diodes with a V2O5 modified silver anode

We fabricated efficient top-emitting organic light-emitting diodes (OLEDs) with silver (Ag) as an anode and samarium (Sm) as a semi-transparent cathode. The hole-injection barrier at the Ag anode/hole transporter interface is reduced by inserting a buffer layer of vanadium oxide (V2O5) between them. The ultraviolet photoelectron spectroscopy analysis shows that the hole-injection barrier is reduced by 0.5 eV. Both the V2O5 thickness and the organic layer thickness are optimized. The optimized device achieves a maximum current efficiency of 5.46 cd A(-1) and a power efficiency of 3.90 lm W-1, respectively.

Hydrothermal syntheses and crystal structures of bimetallic cluster complexes [{Cd(phen)(2)}(2)V4O12]center dot 5H(2)O and [Ni(phen)(3)](2)[V4O12]center dot 17.5H(2)O

The hydrothermal reactions of vanadium oxide starting materials with divalent transition metal cations in the presence of nitrogen donor chelating ligands yield the bimetallic cluster complexes with the formulae [{Cd(phen(2))(2)V4O12].5H(2)O (1) and [Ni(phen)(3)](2)[V4O12] . 17.5H(2)O (2). Crystal data: C48H52Cd2N8O22V4 (1), triclinic. P (1) over bar, a = 10.3366(10), b = 11.320(3), c = 13.268(3) Angstrom, alpha = 103.888(17)degrees, beta = 92.256(15)degrees, gamma = 107.444(14)degrees, Z = 1; C72H131N12Ni2O29.5V4 (2), triclinic. P (1) over bar, a = 12.305(3), b = 13.172(6), c = 15.133(4), alpha = 79.05(3)degrees, beta = 76.09(2)degrees, gamma = 74.66(3)degrees, Z = 1. Data were collected on a Siemens P4 four-circle diffractometer at 293 K in the range 1.59degrees < theta < 26.02degrees and 2.01degrees < 0 < 25.01degrees using the omega-scan technique, respectively. The structure of 1 consists of a [V4O12](4-) cluster covalently attached to two {Cd(phen)(2)}(2+) fragments, in which the [V4O12](4-) cluster adopts a chair-like configuration. In the structure of 2, the [V4O12](4-) cluster is isolated. And the complex formed a layer structure via hydrogen bonds between the V4O12](4-) unit and crystallization water molecules.

Hydrothermal syntheses and crystal structures of new cage-like mixed-valent polyoxovanadates

Three new cage-like mixed-valent polyoxovanadates [Ni(1,10'-phen)(3)](2)[V10O26] 1, [Zn(2,2'-biPY)(3)](3)[V15O36Cl](.)3H(2)O (2) and [Co(2,2'-biPY)(3)](3)[V15O36Cl](.)3H(2)O (3) have been hydrothermally synthesized for the first time and characterized by elemental analyses, IR, EPR spectra, TG analyses and single crystal X-ray diffraction. The polyoxoanion of I exhibits an interesting empty ellipsoidal [V-2(IV) V-8(V) O-26](4-) 'host' shell, while the oxo vanadium clusters of 2 and 3 possess a spherical [V-8(IV) V-7(V) O36Cl](6-) cage with a Cl- ion encapsulated. The structure-directing role of organic templates (1,10'-phen and 2,2'-bipy) on the formation of the polyoxoanion structures is discussed.

Hydrothermal synthesis and structure of [Ni(en)(2)V6O14](n)

A new complex [Ni (en)(2)V6O14](n) was hydrothermally synthesized and characterized by 2-dimensional vanadium oxide framework pillared by Ni(en)(2)group. Single crystal X-ray analysis indicates that this compound crystallizes in monoclinic system, space group P2(1)/c with a=0. 892 17(18) nm, b = 1. 711 1(3) nm, c=0. 662 73(13) nm, beta=111. 58(3)degrees, V=0.940 8(3) nm(3), Z=2, D-c=2.501 g/cm(3), R=0. 042 3, omegaR=0. 060 9, S=1. 006.