Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

他克莫司对UVA照射后HaCaT细胞增殖的影响

　目的　探讨不同浓度他克莫司(TM)对不同强度长波紫外线(UVA)照射HaCaT细胞24h和48h后细胞 增殖活性的影响。方法将培养的HaCaT细胞分别行2, 4 和8J / cm2 的UVA 照射,且照射前1h 分别加入50, 500 和 5 000pg/mL的TM,对照组分别加入50, 500和5 000pg/mL的TM,但不行UVA照射。各剂量组分别照射24h和48h后在 倒置相差显微镜下观察细胞的形态变化,MTT法检测细胞的增殖活性。结果　HaCaT细胞经UVA照射24h后,细胞连接 松散,细胞折光性较未照射组差,部分细胞死亡、脱壁;与未经UVA照射组相比,细胞增殖受到抑制( P < 0. 05) ,加入TM 组无明显变化( P > 0. 05) ;照射48h后细胞虽有大量增殖,但体积较小;与未经UVA 照射组相比,细胞增殖明显( P < 0. 05) ,加入TM组细胞增殖受到抑制(P < 0. 05) 。结论　TM可抑制UVA照射HaCaT细胞引起的过度增殖,对UVA照射 后的HaCaT细胞有保护作用。

THEORETICAL CALCULATION FOR SHUBNIKOV-DEHAAS OSCILLATIONS IN DEEP MESA STRUCTURES

We have used the rectangular confinement potential to describe Shubnikov-deHaas oscillations produced by one-dimensional electrons confined in deep mesa structures. The edge distortion of the confinement potential caused by electrostatic image forces is taken into account. The model contains no fitting parameters and relates well with experimental data. The comparison with earlier reported parabolic model is presented,

Effect of Mesa Size on Thermal Characteristics of Vertical-cavity Surface-emitting Lasers

The effect of mesa size on the thermal characteristics of etched mesa vertical-cavity surfaceemitting lasers(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa VCSEL. Under a certain driving voltage, with decreasing mesa size, the location of the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characteristics of the etched mesa VCSELs will deteriorate.

不同光源下TiO_2膜对MC-RR光催化降解的比较研究

通过溶胶-凝胶法制备了纳米级的锐钛矿型TiO2膜,利用纯化的MC-RR分别研究了该膜在太阳光、UVA和UVC三种光源下对MC-RR的催化降解行为。结果表明,太阳光下TiO2膜对MC-RR的催化降解反应符合一级反应动力学,而在UVA和UVC下符合二级反应。不同光源下TiO2膜的催化效果差别较大,在太阳光下催化效果最为明显,反应速率常数由5.12×10-5·min-1增加到5.49×10-3·min-1,增加了两个数量级;UVA次之,由6.0×10-4L·mg-1·min-1增加到1.55×10-3L·mg-

静止和充气培养条件下短期紫外辐射对钝顶螺旋藻光化学效率的影响

为了研究短期太阳紫外辐射对钝顶螺旋藻的影响,作者将静止和充气培养的藻体,暴露在全波长太阳辐射PAB(PAR+UVA+UVB),去除UVB辐射PA(PAR+UVA)及切断所有紫外辐射的光合有效辐射P(PAR)三种光处理条件下,测定了其光化学效率的变化。结果表明,紫外辐射(UVP)及光合有效辐射(PAR)均能导致钝顶螺旋藻的光化学效率降低,表现出了明显的光抑制,但是,UVR可导致更大程度的光抑制。充气培养条件下,与早晨(07:00)初始值相比,PAR导致了11%~20%的光抑制,而UVR(PAB-P)所产生的

不同波段紫外光对微囊藻毒素光降解的影响

为优化光降解法去除饮用水中的微囊藻毒素,分别用UVA(l=300~400nm)和UVC(l=253.7nm)2种紫外光源研究了紫外光波长对MC-RR降解效率的影响.结果表明,不同波段的紫外光具有不同的催化效率和降解中间产物.在UVA下照射12h后,MC-RR仍有30%~50%残余,同时产生2种几何异构体4(Z)-Adda-MC-RR和6(Z)-Adda-MC-RR,且二者在整个反应过程中保持恒定的比例.而在UVC下,MC-RR除生成2种异构体外,还生成中间产物[三环-Adda]MC-RR,在0.850mW

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 mu m. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.

Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer

The influences of a high-temperature (HT) AlN interlayer (IL) on the phase separation in crack-free AlGaN grown on GaN have been studied. The depth-dependent cathodoluminescence (CL) spectra indicate a relatively uniform Al distribution in the growth direction, but the monochromatic CL images and the CL spectra obtained by line scan measurements reveal a lateral phase separation in AlGaN grown on relatively thick HT-AlN ILs. Moreover, when increasing the thickness of HT-AlN IL, the domain-like distribution of the AlN mole fraction in AlGaN layers is significantly enhanced through a great reduction of the domain size. The morphology of mesa-like small islands separated by V trenches in the HT-AlN IL, and the grain template formed by the coalescence of these islands during the subsequent AlGaN lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the AlGaN layer. (c) 2005 American Institute of Physics.

Thermally tunable optical filter with crystalline silicon as cavity

A novel method to fabricate a thermally tunable filter with a tuning range of 26 nm from 1.504 to 1.530 mum is reported. The high-reffectivity bottom mirror is deposited in the hole formed by anisotropically etching in the basic solution from the backside of the slice with the buried SiO2 layer in silicon-on-insulator substrate as the etching-stop layer. Because of the formation of the mesa and the removing of the substrate of the hole, the power from the metal heater can be more effectively consumed in the crystalline silicon cavity. So it lowers the power consumption and the filter has a higher tuning range. (C) 2004 Elsevier B.V. All rights reserved.

Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

A novel butt-joint coupling scheme is proposed to improve the coupling efficiency for the integration of a GalnAsP MQW distributed feedback (DFB) laser with an MQW electro-absorption modulator (EAM). The proposed method gives more than 90% coupling efficiency, being much higher than the 26% coupling efficiency of the common MQW-MQW coupling technique. The differential quantum efficiency of the MQW-bulk-MQW coupled device is also much higher than that of the MQW-MQW device, 0.106 mW/mA versus 0.02 mW/mA. The EAM-DFB devices fabricated by the proposed method exhibit a very high modulation efficiency (12 dB/V) from 0 to I V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.28 pF. The experimental results demonstrate that the method can replace the conventional MQW-MQW coupling technique to fabricate high-quality integrated photonic devices. (C) 2007 Elsevier B.V. All rights reserved.

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.