Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

流程企业综合集成柔性体系结构研究

本文首先论述了体系结构研究的重要性 ,简要综述了体系结构研究的 4个发展阶段 ,并提出了研究体系结构的谱系概念 .在空间结构的研究中 ,提出了 5个视图与 9种过程流的描述方法和以扁平化递阶 -分散混合集成为特征的柔性体系结构 .本文还提出了体系结构中时间结构的概念及其应用 .