A novel ultra low power temperature sensor for UHF RFID tag chip

A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

A Novel Low-Power Digital Baseband Circuit for UHF RFID Tag with Sensors

A novel low-power digital baseband circuit for UHF RFID tag with sensors is presented in this paper. It proposes a novel baseband architecture and a new operating scheme to fulfill the sensor functions and to reduce power consumption. It is also compatible with the EPC C1G2 UHF RFID protocol. It adopts some advanced low power techniques for system design and circuit design: adaptive clock-gating, multi-clock domain and asynchronous circuit. The baseband circuit is implemented in 0.18um 1P3M standard CMOS process. ne chip area is 0.28 mm(2) excluding test pads. Its power consumption is 25uW under 1.1V power supply.

High efficiency RFID UHF power converter

The paper proposes a high efficiency RFID UHF power converter unit to overcome the low efficiency problem. This power converter is mainly composed of an RF-DC converter and a DC-DC converter. In order to overcome the low efficiency problem in low current consuming condition, a DC-DC converter is added to conventional single RF-DC converter rectifier to increase the rectifying efficiency of the RFDC rectifier. The power converter is implemented in a 0.18 um mixed signal, 1p6m CMOS technology. Simulation shows the power converter has an average improvement of 5% and can achieve efficiency as high as 30% with 900MHz, 16uW RF input power and 1.3 V 3.6uA DC output.

UHF RFID 射频前端及其编解码设计

射频识别（Radio Frequency Identification，RFID）技术，是一种利用射频通信实现的非接触式的数据采集和自动识别技术（以下通称RFID技术）。而超高频射频识别技术（Ultra High Frequency RFID，UHF RFID）具有识别距离远、识别准确率高、识别速度快、抗干扰能力强等特点而成为当前研发的热点。UHF RFID读写器的难点就在于射频前端电路和基带编解码的设计，它们设计的好坏直接决定了读写器的性能好坏。 本文首先通过介绍UHF RFID读写器射频前端设计的基本原理，采用射频通用收发模块进行射频前端设计的方法，给出了以ADF7020收发芯片为核心的UHF RFID读写器的射频前端的整体设计和具体的实现电路，设计了包括射频收发电路、射频前端匹配电路、滤波电路、环行器电路、功率放大电路等。 其次根据EPC Gen-2的协议标准进行了UHF RFID读写器的基带编码解码的仿真设计，然后开发了以FPGA为核心的完整的数字基带硬件电路，实际调试表明整个基带编解码软件在硬件基带PCB板上运行状况良好，并能对EPC Gen-2的协议标准的命令进行正确的编码解码。 最后通过研究学习软件无线电的理论和开发方法，把UHF　RFID读写器的射频前端分成射频模拟前端和射频数字前端，给出了一种基于软件无线电思想的UHF RFID射频数字前端设计模型，并借助于SIMULINK中的信号处理工具箱对构建的数字前端的进行仿真验证，仿真结果验证了用软件无线电实现UHF RFID数字前端的可行性。

A novel DC-DC charge pump circuit for passive RFID transponder

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.

CMOS超高频整流器

提出了一个适用于无源UHF RFID标签芯片的全CMOS整流器.整流器包括射频-直流转换电路、偏置电路、直流-直流转换电路和振荡器电路.整流器的工作频率范围是860～960 MHz.基于0.18μm,1p6m的标准数字CMOS工艺,设计并实现了无源UHF RFID标签芯片的整流器.该设计采用开关电容电路技术动态地消除了CMOS管开启电压的问题,在标准数字CMOS工艺下实现了高效率的超高频整流器.整流器的面积为180μm×140μm.当输入900MHz,-16dBm的射频信号时,整流器的输出电压为1.2V,启动时间为980μs.

Theoretical study on the ClO/ClO- system electron-transfer reactivity by the golden-rule

The structures, properties and electron transfer reactivity of the ClO/ClO- coupling system are studied in this paper at ab initio (UHF and UMP2) levels and the Density Functional Theory (DFT: UB3LYP, UB3P86, UB3PW91) levels employing 6311 + G(3df) basis set and on the basis of the Golden-rule of the time-dependent perturbation theory. Investigations indicate that the results obtained using the UB3LYP method employing 6-311 + G(3df) basis set is in excellent agreement with the experiment. For this coupling system, six stable coupling modes have been found which correspond to six different encounter complexes and denote six different electron transfer mechanism: four O-O directly linked structures (one collinear: D-h, one anti-parallel: C-s, two twist: C-2) and two Cl-O linked structures (cis- and anti- C-s structures). The activation energies, the stabilization energies and the electronic coupling matrix elements have also been calculated for the electron transfer reactions via these six different mechanism at the UB3LYP/6-311 + G(3df) level, and then the electron transfer rates are determined at the same level. The most favorable coupling mode to the electron transfer is the anti-parallel mechanism. The averaged electron transfer rate is about 5.58 X 10(11) M-1 s(-1). It is also implied that the B3LYP method can give more reasonable results for the electron transfer reactivity of this system. (C) 2003 Elsevier B.V. All rights reserved.

THEORETICAL-STUDIES ON THE CYCLIZATION PROCESS OF A NEW ORGANOSULFUR REACTION

The cyclization process of a new organosulfur reaction was studied by the MNDO (UHF) method. The first reaction path was assumed to be via the organosulfur radical intermediate, the second via the ionic (cationic and anionic) intermediates. The dehydroxylation process was assumed to occur with the synergistic cyclization. The results obtained indicate that the potential energy barrier of the first reaction path was about 102 kcal mol(-1), and although the formation of the ionic intermediate is comparatively difficult, the potential energy barrier of the second path is comparable to the first. The sequential reaction path via the radical intermediate, i.e. first cyclization, then dehydroxylation, was investigated for comparison. The cyclization reaction was found to be the thermodynamically favored process, while the ensuing dehydroxylation process was found to have a potential energy barrier of about 62 kcal mol(-1).