34 resultados para Twinning

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Deformation twins and stacking faults have been observed in nanocrystal line Ni, for the first time under uniaxial tensile test conditions. These partial dislocation mediated deformation mechanisms are enhanced at cryogenic test temperatures. Our observations highlight the effects of deformation conditions, temperature in particular, on deformation mechanisms in nanograins.

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A nanostructured surface layer was formed on an Inconel 600 plate by subjecting it to surface mechanical attrition treatment at room temperature. Transmission electron microscopy and high-resolution transmission electron microscopy of the treated surface layer were carried out to reveal the underlying grain refinement mechanism. Experimental observations showed that the strain-induced nanocrystallization in the current sample occurred via formation of mechanical microtwins and subsequent interaction of the microtwins with dislocations in the surface layer. The development of high-density dislocation arrays inside the twin-matrix lamellae provides precursors for grain boundaries that subdivide the nanometer-thick lamellae into equiaxed, nanometer-sized grains with random orientations.

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Deformation twinning near a crack tip is observed in b.c.c. metal Mo based on molecular dynamics simulation at temperature T = 50 K and loading rate (K) over dot(II) = 0.0706 MPa m(1/2)/ps. The defor mation twinning is closely controlled by both the crystal geometry orientation and the stress distribution. The width of the deformation twin band is affected by the distance between the upper and lower crack surfaces. The twin plane and twin direction are (<1(1)over bar>2) and [(1) over bar 11], respectively. The initial crack extension occurs in the deformation twin region near the crack tip. The simulation shows that the extension direction of the crack is changed as the crack propagates over the twinning boundary.

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Extensive transmission electron microscopy examinations confirm that twinning does occur upon large plastic deformation in nanocrystalline Ni, for which no sign of deformation twinning was found in previous tensile tests. Compelling evidence has been obtained for several twinning mechanisms that operate in nanocrystalline grains, with the grain boundary emission of partial dislocations determined as the most proficient. (c) 2006 American Institute of Physics.

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The deformation microstructure of face-centered cubic cobalt subjected to surface mechanical attrition treatment was studied as a function of strain levels. Strain-induced gamma --> epsilon transformation and twinning deformation were evidenced by transmission electron microscopy and were found to progress continuously in ultrafine and nanocrystalline grains as the strain increased.

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Deformation twins have been observed in nanocrystalline (nc) fcc metals with medium-to-high stacking fault energies such as aluminum, copper, and nickel. These metals in their coarse-grained states rarely deform by twining at room temperature and low strain rates. Several twinning mechanisms have been reported that are unique to nc metals. This paper reviews experimental evidences on deformation twinning and partial dislocation. emissions from grain boundaries, twinning mechanisms, and twins with zero-macro-strain. Factors that affect the twinning propensity and recent analytical models on the critical grain sizes for twinning are also discussed. The current issues on deformation twinning in nanocrystalline metals are listed.

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A long-standing controversy exists between molecular dynamics simulations and experiments on the twinning propensity of nanocrystalline (NC) face-centered-cubic metals. For example, three-dimensional molecular dynamics simulations rarely observed twins in NC Ni, whereas experiments readily observed them. Here this discrepancy is resolved by experimental observation of an inverse grain-size effect on twinning. Specifically, decreasing the grain size first promotes twinning in NC Ni and then hinders twinning due to the inverse grain-size effect. Interestingly, no inverse grain-size effect exists on stacking fault formation. These observations are explained by generalized planar fault energies and grain-size effect on partial emissions.

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Macroscopic strain was hitherto considered a necessary corollary of deformation twinning in coarse-grained metals. Recently, twinning has been found to be a preeminent deformation mechanism in nanocrystalline face-centered-cubic (fcc) metals with medium-to-high stacking fault energies. Here we report a surprising discovery that the vast majority of deformation twins in nanocrystalline Al, Ni, and Cu, contrary to popular belief, yield zero net macroscopic strain. We propose a new twinning mechanism, random activation of partials, to explain this unusual phenomenon. The random activation of partials mechanism appears to be the most plausible mechanism and may be unique to nanocrystalline fcc metals with implications for their deformation behavior and mechanical properties.

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Deformation twinning is observed upon large plastic deformation in nanocrystalline (nc) Ni by transmission electron microscopy examinations. New and compelling evidence has been obtained for several twinning mechanisms that operate in nc grains, with the gain boundary emission of partial dislocations determined as the most proficient. Deformation twinning in nc Ni is discussed in comparison with molecular dynamics simulation results, based on generalized planar fault energy curves.

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Most deformation twins in nanocrystalline face-centered cubic fcc metals have been observed to form from grain boundaries. The growth of such twins requires the emission of Shockley partials from the grain boundary on successive slip planes. However, it is statistically improbable for a partial to exist on every slip plane. Here we propose a dislocation reaction and cross-slip mechanism on the grain boundary that would supply a partial on every successive slip plane for twin growth.This mechanism can also produce a twin with macrostrain smaller than that caused by a conventional twin.

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GaN buffer layers (thickness ~60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

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alpha-titanium and its alloys with a dual-phase structure (alpha+beta) were deformed dynamically under strain rate of about 10(4) s(-1). The formation and microstructural evolution of the localized shear bands were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results reveal that both the strain and strain rate should be considered simultaneously as the mechanical conditions for shear band formation, and twinning is an important mode of deformation. Both experimental and calculation show that the materials within the bands underwent a superhigh strain rate (9 x 10(5) s(-1)) deformation, which is two magnitudes of that of average strain rate required for shear band formation; the dislocations in the bands can be constricted and developed into cell structures; the phase transformation from alpha to alpha(2) within the bands was observed, and the transformation products (alpha(2)) had a certain crystallographic orientation relationship with their parent; the equiaxed grains with an average size of 10 mu m in diameter observed within the bands are proposed to be the results of recrystallization.

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The partial-dislocation-mediated processes have so far eluded high-resolution transmission electron microscopy studies in nanocrystalline nc Ni with nonequilibrium grain boundaries. It is revealed that the nc Ni deformed largely by twinning instead of extended partials. The underlying mechanisms including dissociated dislocations, high residual stresses, and stress concentrations near stacking faults are demonstrated and discussed.