Tuning The Geometrical Parameters Of Biomimetic Fibrillar Structures To Enhance Adhesion

Fibrillar structures are common features on the feet of many animals, such as geckos, spiders and flies. Theoretical analyses often use periodical array to simulate the assembly, and each fibril is assumed to be of equal load sharing (ELS). On the other hand, studies on a single fibril show that the adhesive interface is flaw insensitive when the size of the fibril is not larger than a critical one. In this paper, the Dugdale Barenblatt model has been used to study the conditions of ELS and how to enhance adhesion by tuning the geometrical parameters in fibrillar structures. Different configurations in an array of fibres are considered, such as line array, square and hexagonal patterns. It is found that in order to satisfy flaw-insensitivity and ELS conditions, the number of fibrils and the pull-off force of the fibrillar interface depend significantly on the fibre separation, the interface interacting energy, the effective range of cohesive interaction and the radius of fibrils. Proper tuning of the geometrical parameters will enhance the pull-off force of the fibrillar structures. This study may suggest possible methods to design strong adhesion devices for engineering applications.

Electron quantum path tuning and isolated attosecond pulse emission driven by a waveform-controlled multi-cycle laser field

We investigate high-order harmonic emission and isolated attosecond pulse (IAP) generation in atoms driven by a two-colour multi-cycle laser field consisting of an 800 nm pulse and an infrared laser pulse at an arbitrary wavelength. With moderate laser intensity, an IAP of similar to 220 as can be generated in helium atoms by using two-colour laser pulses of 35 fs/800 nm and 46 fs/1150 nm. The discussion based on the three-step semiclassical model, and time-frequency analysis shows a clear picture of the high-order harmonic generation in the waveform-controlled laser field which is of benefit to the generation of XUV IAP and attosecond electron pulses. When the propagation effect is included, the duration of the IAP can be shorter than 200 as, when the driving laser pulses are focused 1 mm before the gas medium with a length between 1.5 mm and 2 mm.

Temperature and stress tuning characteristics of long-period gratings imprinted in Panda fiber

Temperature and stress tunabilities of long-period Bragg gratings imprinted in Panda fiber are presented in this letter. It is shown that the temperature and strain response of the resonance peaks for fast and slow axes are different not only in their magnitudes but also in the signs of the slope. Furthermore, the characteristics for different order modes are different both in magnitudes and signs. The complicated phenomena are discussed by using a simplified model.

Optical properties of zirconia-titania-ORMOSIL films for temperature tuning distributed feedback waveguide lasers

The zirconia-titania-ORMOSIL waveguide thin films with considerable optical quality were prepared by the sol-gel process. The refractive index (n) and the extinction coefficient (k) were determined by a scanning ellipsometer. Wavelength tunable output of distributed feedback waveguide lasing was demonstrated in Rhodamine 6G doped ZrO2 TiO2-ORMOSIL thin films by varying the temperature, and about 5.5 nm wavelength tuning range was achieved around the emission wavelength of 599 nm. The thermal-optic coefficient (dn/dT) of the active ZrO2-TiO2-ORMOSIL films was deduced. (c) 2005 Elsevier B.V. All rights reserved.

Tuning the Eu luminescence in glass materials synthesized in air by adjusting glass compositions

The doped Eu3+ ions can be partly reduced to Eu2+ in a series of MO-B2O3: Eu (M=Ba, Sr, Ca) glasses synthesized in air atmosphere, but not in the 12CaO-7Al(2)O(3): Eu glass. The different redox-behavior of Eu ions in these two glass systems is attributed to the different host optical basicity. It is found that a lower valence state of Eu2+ is more favorable in acidic glasses, which have lower optical basicities. A notion of the critical value of optical basicity is introduced empirically, which can be used as a guide for the selection of glass composition suitable to incorporate Eu2+ for luminescence. (C) 2006 Elsevier B.V. All rights reserved.

Tuning photoluminescence of single InAs quantum dot by electric field

By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-1-n structure have been studied under an applied electric field With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.

Tuning of the two electron states in quantum rings through the spin-orbit interaction

The effect of the Coulomb interaction on the energy spectrum and anisotropic distribution of two electron states in a quantum ring in the presence of Rashba spin-orbit interaction (RSOI) and Dresselhaus SOI (DSOI) is investigated in the presence of a perpendicular magnetic field. We find that the interplay between the RSOI and DSOI makes the single quantum ring behaves like a laterally coupled quantum dot and the interdot coupling can be tuned by changing the strengths of the SOIs. The interplay can lead to singlet-triplet state mixing and anticrossing behavior when the singlet and triplet states meet with increasing magnetic field. The two electron ground state displays a bar-bell-like spatial anisotropic distribution in a quantum ring at a specific crystallographic direction, i.e., [110] or [1 (1) over bar0], which can be switched by reversing the direction of the perpendicular electric field. The ground state exhibits a singlet-triplet state transition with increasing magnetic field and strengths of RSOI and DSOI. An anisotropic electron distribution is predicted which can be detected through the measurement of its optical properties.

Tuning of energy levels and optical properties of graphene quantum dots

We investigate theoretically the magnetic levels and optical properties of zigzag- and armchair-edged hexagonal graphene quantum dots (GQDs) utilizing the tight-binding method. A bound edge state at zero energy appears for the zigzag GQDs in the absence of a magnetic field. The magnetic levels of GQDs exhibit a Hofstadter-butterfly spectrum and approach the Landau levels of two-dimensional graphene as the magnetic field increases. The optical properties are tuned by the size, the type of the edge, and the external magnetic field.

Electric-field tuning s-d exchange interaction in quantum dots

We investigate theoretically the electron-hole pair states in CdTe quantum dot (QD) containing a single Mn2+ ion by the magneto-optical spectrum tuned by the electric field. It is shown that the electric field does not only tune the spin splitting via the sp-d exchange interaction but also affect significantly the anticrossing behavior in the photoluminescence spectrum. This anticrossing is caused by the s-d exchange interaction and/or the hole mixing effect, which depends sensitively on the shape of the QD. (C) 2008 American Institute of Physics.

Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires

We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.

Tuning of plasmon propagation in two-dimensional electrons

It is shown theoretically that the propagation of plasmons can be tuned by an external electric field via spin-orbit interactions in a two-dimensional electron gas formed in a semiconductor heterostructure. This may provide a manageable way of transmitting quantum information in a quantum device. A possible plasmon field effect transistor is proposed.

Tuning of detection wavelength in a resonant-cavity-enhanced quantum-dot-embedded photodiode by changing detection angle

We have fabricated a resonant-cavity-enhanced photodiode (RCE-PD) with InGaAs quantum dots (QDs) as an active medium. This sort of QD-embedded RCE-PD is capable of a peak external quantum efficiency of 32% and responsivity of 0.27A/W at 1.058 mu m with a full width at half maximum (FWHM) of 5 nm. Angle-resolved photocurrent response eventually proves that with the detection angle changing from 0 degrees to 60 degrees, the peak-current wavelength shifts towards the short wavelength side by 37 nm, while the quantum efficiency remains larger than 15%.

Structure tuning of line-defect waveguides based on silicon-on-insulator photonic crystal slabs

We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides.

Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots

We have investigated the effect of different cap layers on the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs). Based upon different cap layers, the wavelength of InAs QDs can be tuned to the range from 1.3 to 1.5 mum. An InAlAs and InGaAs combination layer can enlarge the energy separation between the ground and first excited radiative transition. GaAs/InAs short period superlattices (SLs) make the emission wavelength shift to 1.53 mum. The PL intensity of InAs QDs capped with GaAs/InAs SLs shows an anomalous increase with increasing temperature. We attribute this to the transfer of carriers between different QDs.

Magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot

The spin interaction and the effective g factor of a magnetic exciton (ME) are investigated theoretically in a diluted magnetic semiconductor (DMS) quantum dot (QD), including the Coulomb interaction and the sp-d exchange interaction. At low magnetic field, the ME energy decreases rapidly with increasing magnetic field and saturates at high magnetic field for high Mn concentration. The ground state of the ME exhibits an interesting crossing behavior between sigma(+)-ME and sigma(-)-ME for low Mn concentration. The g(ex) factor of the ME in a DMS QD displays a monotonic decrease with increasing magnetic field and can be tuned to zero by an external magnetic field. (C) 2003 American Institute of Physics.