Single mode operation of a Fabry-Perot laser locked by a tunable laser

In this article, the single mode operation of a Fabry-Perot laser (FP-LD) subject to the optical injection from a tunable laser is investigated. The maximum side mode suppression ratio (SMSR) is 53 dB, and the locked wavelength range is about 46 nm, which can cover 58 International Telecommunication Union (ITU) wavelengths with 100 GHz spacing or 115 ITU wavelengths with 50 GHz spacing for wavelength division multiplexing (WDM) system. In the wavelength range front 1535 to 1569 nm, the SMSR is over 46 dB, and the frequency response of the injection-locked FP-LD can be improved with the proper wavelength detuning. (c) 2008 Wiley Periodicals, Inc.

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in mainland China. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.

Tunable and efficient diode-pumped Yb3+: GYSO laser

Effective diode-pumped cw tunable laser action of a new alloyed crystal Yb:Gd(2(1-)x) Y2xSiO5 (Yb:GYSO, x = 0.5) is demonstrated for the first time. The alloyed crystal retains excellent laser properties of Gd2SiO5 (GSO), as well as the favorable growth properties and the desirable physical of Y2SiO5 (YSO). With a 5-at.% Yb: GYSO sample, we achieved 2.44 W output power at 1081.5 nm and a slope efficiency of 57%. And its laser wavelength could be tuned from 1030nm to 1089 nm. (c) 2006 Optical Society of America.

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

Widely Tunable Sampled-Grating DBR Laser

The 3-section SG-DBR tunable laser is fabricated using an ion implantation quantum-well intermixing process. The over 30nm discontinuous tuning range is achieved with the SMRS greater than 30dB.

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.

Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber

By employing a continuous-wave (CW) Ti:sapphire tunable laser as a pumping source and a Cr4+:YAG single crystal as the saturable absorber (SA), a passively Q-switched Nd:YAG ceramic laser has been demonstrated at room temperature. With an absorbed pumping power of 541 mW at 808 nm, an average output power of 61 mW at 1064 nm has been obtained with 3.5 mu J pulse energy, 15 ns pulse width and 18.18 kHz repetition rate, and the corresponding slope-efficiency is 15%. The relationships between the pulse width, repetition rate, average output power, pulse energy, and peak power on the absorbed pumping power for different initial transmission of the Cr4+:YAG SA are discussed separately. The Nd:YAG ceramic is one of the most promising laser materials for compact, efficient, all-solid-state pulsed lasers.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Tunable MQW-DBR lasers using selective area growth

The tunable ridge waveguide distributed Bragg reflector (DBR) lasers designed for wavelength-division-multiplex (WDM) communication systems at 1.55 um by using selective area growth (SAG) is reported. The threshold current of the DBR laser is 62mA and the output power is more than 8mW. The isolation resistance between the active region and the Bragg region is 30K Ohm. The total tuning range is 6.5nm and this DBR laser can provide 6 continuous standard WDM channels with 100GHz channel spacing; in the tuning range, the single mode suppression ratio (SMSR) is maintained more than 32dB and the maximum output power variation is less than 3dB.

用半导体激光器对 Yb3+:LYSO 晶体的高效率激光特性的研究

本文报导了采用半导体激光器泵浦的高效连续可调谐Yb:LYSO激光器的输出特性。LYSO晶体同时具有LSO晶体良好的激光性能和YSO晶体易于生长且成本低廉的优点，实验中我们采用5at%掺杂的Yb:LYSO晶体进行研究，获得了最大输出功率2.84W、输出波长1085nm、光-光转换效率54.5%的高效输出。并且得到了1030-1111nm，一共81nm的波长调谐范围，这是目前我们所知道的从Yb:LYSO激光器获得的最宽的调谐输出。

Transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence

We report transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence. After heat-treatment, ZnAl2O4 crystallite was precipitated in the glasses, and its average size increased with increasing heat-treatment temperature. No infrared emission was detected in the as-prepared glass samples, while broadband infrared luminescence centered at 1310 nm with full width at half maximum (FWHM) of about 300 nm was observed from the glass-ceramics. The peak position of the infrared luminescence showed a blue-shift with increasing heat-treatment temperature, but a red-shift with an increase in NiO concentration. The mechanisms of the observed phenomena were discussed. These glass-ceramics are promising as materials for super broadband optical amplifier and tunable laser. (c) 2006 Elsevier Ltd. All rights reserved.

Cr~(2+):ZnSe的激光输出和调谐性能

Cr~(2+):ZnSe具有很宽的吸收带和发射带,是中红外波段优秀的可调谐激光材料。从吸收光谱、发射光谱以及角度调谐输出对Cr~(2+):ZnSe晶体的激光输出性能进行了研究。采用真空高温扩散法制备Cr~(2+):ZnSe晶体.获得了高浓度的Cr~(2+)离子掺杂的厚1.7 mm,直径10 mm的薄片ZnSe晶体。使用中心波长2.05μm,最大输出功率8 W的Tm离子掺杂的光纤激光器抽运,使用平凹腔结构搭建谐振腔,获得了最大平均功率1.034 W,中心波长2.367μm,线宽10 nm的连续激光输出。利用角度调谐的方法,对Cr:ZnSe晶体的调谐性能进行了研究,在100 nm范围内获得了调谐输出。

Cr2+:ZnSe中红外激光器

Cr2+掺杂II-VI族化合物在中红外波段的输出，在气体检测、遥感、通信、眼科医学、神经外科等领域有着重要的应用前景。目前已经获得了最大1.7 W的连续输出功率，18.5 W的平均脉冲功率，1100 nm的调谐范围和最窄4 ps的脉宽。对Cr2+:ZnSe连续、脉冲、随机纳米激光器以及其它的Cr2+掺杂II-VI族化合物激光器的最新的国内外研究进展进行了综述。

激光二极管阵列的窄线宽、可调谐输出

外腔反馈的激光二极管阵列(LDA)可获得窄线宽、可调谐的光谱输出。外腔由快轴准直镜、准直光学系统和闪耀光栅组成。由于阵列中各发光单元的排列弯曲导致不同波长的光原路返回,引起谱线展宽,在输出光路中加入光谱滤波器,使激光二极管阵列的线宽进一步窄化。这样,激光二极管阵列的输出光谱由自由运转时的2 nm压缩到0.12 nm,在恒定温度23 ℃时,实现了激光在806～818 nm的调谐,调谐范围达12 nm。