Investigation on the properties of high reflective mirror prepared by ion-beam sputtering

The single-sided and dual-sided high reflective mirrors were deposited with ion-beam sputtering (IBS). When the incident light entered with 45 degrees, the reflectance of p-polarized light at 1064 nm exceeded 99.5%. Spectrum was gained by spectrometer and weak absorption of coatings was measured by surface thermal lensing (STL) technique. Laser-induced damage threshold (LIDT) was determined and the damage morphology was observed with Lecia-DMRXE microscope simultaneously. The profile of coatings was measured with Mark III-GPI digital interferometer. It was found that the reflectivity of mirror exceeded 99.9% and its absorption was as low as 14 ppm. The reflective bandwidth of the dual-sided sample was about 43 nm wider than that of single-sided sample, and its LIDT was as high as 28 J/cm2, which was 5 J/cm2 higher than that of single-sided sample. Moreover, the profile of dual-sided sample was better than that of substrate without coatings.

Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing

VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.

Co-electrospun poly(lactide-co-glycolide), gelatin, and elastin blends for tissue engineering scaffolds

In this study, we describe composite scaffolds composed of synthetic and natural materials with physicochemical properties suitable for tissue engineering applications. Fibrous scaffolds were co-electrospun from a blend of a synthetic biodegradable polymer (poly(lactic-co-glycolic acid), PLGA, 10% solution) and two natural proteins, gelatin (denatured collagen, 8% solution) and (x-elastin (20% solution) at ratios of 3:1:2 and 2:2:2 (v/v/v). The resulting PLGA-gelatin-elastin (PGE) fibers were homogeneous in appearance with an average diameter of 380 80 mn, which was considerably smaller than fibers made under identical conditions from the starting materials (PLGA, 780 +/- 200 nm; gelatin, 447 +/- 1.23 nm; elastin, 1060 170 nm). Upon hydration, PGE fibers swelled to an average fiber diameter of 963 +/- 132 nm, but did not disintegrate. Importantly, PGE scaffolds were stable in an aqueous environment without crosslinking, and were more elastic than those made of pure elastin fibers. To investigate the cytocompatibility of PGE, we cultured H9c2 rat cardiac myoblasts and rat bone marrow stromal cells (BMSCs) on fibrous PGE scaffolds. We found that myoblasts grew equally as well or slightly better on the scaffolds than on tissue-culture plastic. Microscopic evaluation confirmed that myoblasts reached confluence on the scaffold surfaces while simultaneously growing into the scaffolds.

Synthesis of biodegradable and electroactive multiblock polylactide and aniline pentamer copolymer for tissue engineering applications

To obtain one biodegradable and electroactive polymer as the scaffold for tissue engineering, the multiblock copolymer PLAAP was designed and synthesized with the condensation polymerization of hydroxyl-capped poly(L-lactide) (PLA) and carboxyl-capped aniline pentamer (AP). The PLAAP copolymer exhibited excellent electroactivity, solubility, and biodegradability. At the same time, as one scaffold material, PLAAP copolymer possesses certain mechanical properties with the tensile strength of 3 MPa, tensile Young 's modulus of 32 MPa, and breaking elongation rate of 95%.

Lanzhou all permanent ECR ion source No.1 - LAPECR1

The Lanzhou All Permanent magnet ECR ion source NO. 1 (LAPECR1) is the first all permanent magnet multiple ECRIS made in IMP. This ECRIS is running at 14.5GHz and can provide intense low charge state ion beams (varying from several to hundreds of e mu A) or medium charge state ion beams (varying from several to tens of e mu A). The size of source body is circle divide 102mmx296mm, the compactness and economical features enable the source suitable to be put on a HV platform or equipped by a small laboratory. This article gives the main parameters of the ion source.

Electroactive oligoaniline-containing self-assembled monolayers for tissue engineering applications

A novel electroactive silsesquioxane precursor, N-(4-aminophenyl)-M-(4'-(3-triethoxysilyl-propyl-ureido) phenyl-1,4-quinonenediimine) (ATQD), was successfully synthesized from the emeraldine form of amino-capped aniline trimers via a one-step coupling reaction and subsequent purification by column chromatography. The physicochemical properties of ATQD were characterized using mass spectrometry as well as by nuclear magnetic resonance and UV-vis spectroscopy. Analysis by cyclic voltammetry confirmed that the intrinsic electroactivity of ATQD was maintained upon protonic acid doping, exhibiting two distinct reversible oxidative states, similar to polyaniline. The aromatic amine terminals of self-assembled monolayers (SAMs) of ATQD on glass substrates were covalently modified with an adhesive oligopeptide, cyclic Arg-Gly-Asp (RGD) (ATQD-RGD). The mean height of the monolayer coating on the surfaces was similar to 3 nm, as measured by atomic force microscopy. The biocompatibility of the novel electroactive substrates was evaluated using PC12 pheochromocytoma cells, an established cell line of neural origin. The bioactive, derivatized electroactive scaffold material, ATQD-RGD, supported PC12 cell adhesion and proliferation, similar to control tissue-culture-treated polystyrene surfaces.

Effects of ion beam irradiation on adventitious shoot regeneration from in vitro leaf explants of Saintpaulia ionahta

The effects of 960 MeV carbon ion beam and 8 MeV X-ray irradiation on adventitious shoots from in vitro leaf explants of two different Saintpaulia ionahta (Mauve and Indikon) cultivars were studied with regard to tissue increase, shoots differentiation and morphology changes in the shoots. The experimental results showed that the survival fraction of shoot formation for the Mauve and Indikon irradiated with the carbon ion beam at 20 Gy were 0.715 and 0.600, respectively, while those for both the cultivars exposed to the Xray irradiation at the same dose were 1.000. Relative biological effectiveness (RBE) of Mauve with respect to X-ray was about two. Secondly, the percentage of regenerating explants with malformed shoots in all Mauve regenerating explants irradiated with carbon ion beam at 20 Gy accounted for 49.6%, while that irradiated with the same dose of X-ray irradiation was only 4.7%; as for Saintpatdia ionahta Indikon irradiated with 20 Gy carbon ion beam, the percentage was 43.3%, which was higher than that of X-ray irradiation. Last, many chlorophyll deficient and other varieties of mutants were obtained in this study. Based on the results above, it can be concluded that the effect of mutation induction by carbon ion beam irradiation on the leaf explants of Saintpaulia ionahta is better than that by X-ray irradiation; and the optimal mutagenic dose varies from 20 Gy to 25 Gy for carbon ion beam irradiation.

Metallographic Sample Prepared by Ion Beam Etching

Ion beam etching technique was used to reveal the metallograhpic microstructure and interface morphology of electroplating chromium coating, in particular, whose substrate surface layer was treated in advance by laser quenching. Chemical etchings were, also conducted for comparison. The reveal microstructures were observed and analyzed by scanning electron microscopy. The results show that ion beam etching can reveal well the whole microstructures of composite coating-substrate materials.

Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed

Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition

Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5 x 10^{17} cm^{-2}. The samples were held at room temperature and at 300degreesC during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300degreesC than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesC is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300degreesC has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300degreesC shows ferromagnetic behavior at room temperature.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.