基于同步移相技术的1/4波片快轴方位角的实时测量

提出了一种基于同步移相技术的1/4波片快轴方位角的实时测量方法。由正交光栅、光阑、检偏器组和四象限探测器实现同步移相功能。检偏器组由4个不同方位角的检偏器组成。通过检偏器组的四束光束的光强由四象限探测器同时测量。1/4波片的快轴方位角由这四光束的光强得到。由于该方法不需旋转偏振器件，从而实现的1/4波片的快轴方位角的实时测量。

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Preparation and characterization of nanocrystalline CeO2 by precipitation method

CeO2 nanocrystalline particulates with different sizes were prepared by precipitation method using ethanol as dispersive and protective reagent. XRD spectra show that the synthesized CeO2 has cubic crystalline structure of space group O-H(5)-F-M3M, when calcination temperature is in the range of 250 similar to 800 degreesC. TEM images reveal that CeO2 particles are spherical in shape. The average size of the particles increases with the increase of calcination temperature. Thermogravimetric analysis indicates that the weight loss of precursor mainly depends on the calcination temperature, and little depends on the calcination time. Measurements of CeO2 relative density show that the relative density of CeO2 nanocrystalline powders increases with increasing CeO2 particle size.

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Secondary electron time detector for mass measurements at CSRe

The Isochronous Mass Spectrometry is a high accurate mass spectrometer. A secondary electrons time detector has been developed and used for mass measurements. Secondary electrons from a thin carbon foil are accelerated by ail electric field and deflected 180 degrees by a magnetic field onto a micro-channel plate. The time detector has been tested with alpha particles and a time resolution of 197 ps (FWHM) was obtained in the laboratory. A mass resolution around 8 x 10(-6) For Delta m/m was achieved by using this time detector in a pilot mass measurement experiment.

The time delay in electrochemical measurements of a finite-volume system

For a sphere electrode enclosed in finite-volume electrolyte, the measured current will deviate from the result predicted by the semi-infinite diffusion theory after some time. By random-walk simulation, we compared this time to the one needed for diffusion layer to reach electrolyte boundary, and revealed a clear signal delay of electrochemical current. Further we presented a quantitative description of this delay time. The simulation results suggested that the semi-infinite diffusion theory can even be applied when the theoretical diffusion layer grows to 1.28 electrolyte thicknesses, with an accuracy better than 0.5%. We attributed this time delay to the molecules' finite propagation velocity. Finally, we discussed how this delay can influence and facilitate the following electrochemical detection towards the nanometer and single-cell scale.

Scaling, Dimensional Analysis, and Indentation Measurements

We provide an overview of the basic concepts of scaling and dimensional analysis, followed by a review of some of the recent work on applying these concepts to modeling instrumented indentation measurements. Specifically, we examine conical and pyramidal indentation in elastic-plastic solids with power-law work-hardening, in power-law creep solids, and in linear viscoelastic materials. We show that the scaling approach to indentation modeling provides new insights into several basic questions in instrumented indentation, including, what information is contained in the indentation load-displacement curves? How does hardness depend on the mechanical properties and indenter geometry? What are the factors determining piling-up and sinking-in of surface profiles around indents? Can stress-strain relationships be obtained from indentation load-displacement curves? How to measure time dependent mechanical properties from indentation? How to detect or confirm indentation size effects? The scaling approach also helps organize knowledge and provides a framework for bridging micro- and macroscales. We hope that this review will accomplish two purposes: (1) introducing the basic concepts of scaling and dimensional analysis to materials scientists and engineers, and (2) providing a better understanding of instrumented indentation measurements.

Detection of Brillouin scattering temperature signal in Brillouin optical time-domain reflectometer sensing system based on instantaneous frequency measurement technology

We present a simple and practical method for the single-ended distributed fiber temperature measurements using microwave (11-GHz) coherent detection and the instantaneous frequency measurement (IFM) technique to detect spontaneous Brillouin backscattered signal in which a specially designed rf bandpass filter at 11 GHz is used as a frequency discriminator to transform frequency shift to intensity fluctuation. A Brillouin temperature signal can be obtained at 11 GHz over a sensing length of 10 km. The power sensitivity dependence on temperature induced by frequency shift is measured as 2.66%/K. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Detection of Brillouin scattering temperature signal in Brillouin optical time-domain reflectometer sensing system based on instantaneous frequency measurement technology

abstract {We present a simple and practical method for the single-ended distributed fiber temperature measurements using microwave (11-GHz) coherent detection and the instantaneous frequency measurement (IFM) technique to detect spontaneous Brillouin backscattered signal in which a specially designed rf bandpass filter at 11 GHz is used as a frequency discriminator to transform frequency shift to intensity fluctuation. A Brillouin temperature signal can be obtained at 11 GHz over a sensing length of 10 km. The power sensitivity dependence on temperature induced by frequency shift is measured as 2.66%/K. © 2007 Society of Photo-Optical Instrumentation Engineers.}

Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements

We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs/GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (C) 2008 American Institute of Physics.

Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells

We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.55 mu m at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.