6 resultados para Threshold Access Structures

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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研究了在引入量化权限观点后从访问控制角度实现秘密保护的问题.元权限是从哲学上"质"和"量"的角度认识传统意义上的权限所探究出的新概念,较以往访问控制中认识和使用权限而言,它全面而深入地反映了权限这一概念的本质.进一步结合门限思想和基于角色的访问控制机制所提出的基于量化权限的门限访问控制方案,从访问控制的角度研究了秘密保护问题.在秘密保护方面,基于量化权限的门限访问控制方案具有一些独特的优点,比如分发给参与者的秘密分片和要保护的秘密无知识上的联系、可以反映出参与者信任度的差异以及运算量低.

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Direct numerical simulation (DNS) of a spatially evolving flat-plate boundary layer transition process at free stream Mach number 0.7 is performed. Tollmien-Schlichting (T-S) waves are added on the inlet boundary as the disturbances before transition. Typical coherent structures in the transition process are investigated based on the second invariant of velocity gradient tensor. The instantaneous shear stress and the mean velocity profile in the transition region are studied. In our view, the fact that the peak value of shear stress in the stress concentration area increases and exceeds a threshold value during the later stage of the transition process plays an important role in the laminar breakdown process.

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Near threshold, mixed mode (I and II), fatigue crack growth occurs mainly by two mechanisms, coplanar (or shear) mode and branch (or tensile) mode. For a constant ratio of ΔKIKII the shear mode growth shows a self-arrest character and it would only start again when ΔKI and ΔKII are increased. Both shear crack growth and the early stages of tensile crack growth, are of a crystallographic nature; the fatigue crack proceeds along slip planes or grain boundaries. The appearance of the fracture surfaces suggest that the mechanism of crack extension is by developing slip band microcracks which join up to form a macrocrack. This process is thought to be assisted by the nature of the plastic deformation within the reversed plastic zone where high back stresses are set up by dislocation pile-ups against grain boundaries. The interaction of the crack tip stress field with that of the dislocation pile-ups leads to the formation of slip band microcracks and subsequent crack extension. The change from shear mode to tensile mode growth probably occurs when the maximum tensile stress and the microcrack density in the maximum tensile plane direction attain critical values.

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Using first-principles molecular dynamics simulations, the displacement threshold energy and defect configurations are determined in SiC nanotubes. The simulation results reveal that a rich variety of defect structures (vacancies, Stone-Wales defects and antisite defects) are formed with threshold energies from 11 to 64 eV. The threshold energy shows an anisotropic behavior and exhibits a dramatic decrease with decreasing tube diameter. The electronic structure can be altered by the defects formed by irradiation, which suggests that the electron irradiation may be a way to use defect engineering to tailor electronic properties of SiC nanotubes.

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We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected.

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We describe near-threshold high-resolution spectra and continuum resonance dynamical behaviour of all three stable hydrogen isotopic variants, and finally obtain improved values for the dissociation energies of hydrogen molecule and its ion. The second dissociation limit is determined by analysing the onset of the vibrational continuum.