Effects on Dense-phase Zone Temperature of Fluidized Bed with Uneven Air Distribution

由于采用非均匀布风,内旋流流化床的移动区空气量不足,导致燃烧不充分,温度较低。当移动区未流化时,密相区内存在较明显的温度不均匀性。随着移动区流速的提高,温度差迅速减小。当移动区流速超过2.0#mu#m后,密相区温度基本均匀一致。流动区流速对密相区温度均匀有一定的影响,流速越高,温度越均匀。

Measured temperature of a laminar plasma jet by using thermocouple at reduced pressure

Attempts were made to measure the gas temperature of a DC arc laminar plasma jet generated at reduced pressure by using a pair of WRe-5/26 thermocouple. Results show that the measured temperature is much lower than the value measured by using the spectral method. Theoretical work considering rarefied-gas heat transfer effects has been carried out to analyze the measured error of the thermocouple.

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

We have studied the influence of the growth temperature of the high-temperature (HT) AIN buffer layer on the properties of the GaN epilayer which was grown on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). It was found that the crystal quality of the GaN epilayer strongly depends on the growth temperature of the HT-AIN buffer. The growth temperature of the AIN buffer to obtain high-quality GaN epilayers lies in a narrow window of several tens of degrees. When the temperature is lower than a certain temperature range, the appearance of AIN polycrystals results in the deterioration of the crystal quality of the AIN buffer layer, which is greatly disadvantageous to the coalescence of the GaN epilayer. Although the AIN buffer's crystal quality is improved as the growth temperature increases, the Si outdiffusion from the substrate is also enhanced when the temperature is higher than a certain temperature range, which will demolish the subsequent growth of the GaN epilayer. Therefore, there exists an optimum growth temperature range of the AIN buffer around 1080degreesC for the growth of high-quality GaN epilayers. (C) 2003 Elsevier B.V. All rights reserved.

A convenient way of determining the ferromagnetic transition temperature of metallic (Ga,Mn)As

We have studied magnetic and transport properties of insulating and metallic (Ga,Mn)As layers before and after annealing. A dramatic increase of the ferromagnetic transition temperature T-C by postgrowth annealing has been realized in both insulating and metallic (Ga,Mn)As. The as-grown insulating (Ga,Mn)As can be turned into metallic by the low-temperature annealing. For all the metallic (Ga,Mn)As, a characteristic feature in the temperature dependence of sheet resistance appears around T-C. This phenomenon may provide a simple and more convenient method to determine the T-C of metallic (Ga,Mn)As compared with superconducting quantum interference device (SQUID) measurement. Moreover, the T-C of the metallic (Ga,Mn)As obtained by this way is in good agreement with that measured by a SQUID magnetometer. (C) 2005 American Institute of Physics.

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Electron beam longitudinal temperature of electron cooler on the CSR

Electron beam longitudinal temperature is an important parameter on electron cooling devise. In this paper, electron beam longitudinal temperature on the HIRFL-CSR electron cooling devise is deduced from four important factors-flattened distribution, electrostatic accelerate, space charge effect and beam scattering.

Phase transition temperature of HPT(2,3,6,7,10,11-hexa-n-pentyloxytriphenylene) from molecule dynamic simulation

Molecule dynamics simulation was used on HPT(2,3,6,7,10,11-hexa-n-pentyloxytriphenylene), which is a discotic Liquid crystal. From analyzing the energy and displacement varying with the temperature, the phase transition temperature of PM6MPP can be predicted. The deviations of T-g, T-m and T-i due to the MD time scale are small enough that it should be possibly used to predict the material properties especially when more powerful computers are available.

Effects of molecular weight and interaction parameter on the glass transition temperature of polystyrene mixtures and its blends with polystyrene/poly(2,6-dimethyl-p-phenylene oxide)

The glass transition temperature (T-g) of mixtures of polystyrene (PS) with different molecular weight and of blends of poly(2,6-dimethyl-p-phenylene oxide) (PPO) and polystyrene with different molecular weight (DMWPS) was studied by a DSC method. For the whole range of composition, the curves of T-g vs composition obtained by experiment were compared with predictions from the Fox, Gordon-Taylor, Couchman and Lu-Weiss, equations. It was found that the experimental results were not in agreement with those from the Fox, Gordon-TayIor and Couchman equations for the binary mixtures of DMWPS, where the interaction parameter chi was approximately zero. However, for the blends PPO/DMWPS (chi < 0), with an increase of molecular weight of PS, it was shown that the experimental results fitted well with those obtained from the Couchman, Gordon-Taylor and Fox equations, respectively. Furthermore, the Gordon-Taylor equation was nearly identical to the Lu-Weiss equation when \chi\ was not very large. Further, the dependence of the change of heat capacity associated with the glass transition (Delta C-p) on the molecular weight of PS was investigated and an empirical equation was presented. (C) 1997 Elsevier Science Ltd.

Temperature measurement of reflected shock wave by using chemical indicator

This report describes a new method for measuring the temperature of the gas behind the reflected shock wave in shock tube, corresponding to the reservoir temperature of a shock tunnel, based on the chemical reaction of small amount of CF4 premixed in the test gas. The final product C2F4 is used as the temperature indicator, which is sampled and detected by a gas chromatography in the experiment. The detected concentration of C2F4 is correlated to the temperature of the reflected shock wave with the initial pressure P-1 and test time tau as parameters in the temperature range 3 300 K < T < 5 600 K, pressure range 5 kPa < P1 <12 kPa and tau similar or equal to 0.4 ms.

Measurement and Calculation of Vibrational Temperature behind Strong Shock Waves

In the present paper the measured values of vibrational temperature behind strong shock waves are compared with theoretical ones. The histories of vibrational temperature behind strong shock waves in a shock tube were measured using two monochromators. The test gas was pure nitrogen at 100-300Pa, and the speeds of shock waves were 5.0-6.0km/s. The electronic temperature of N-2(+) was also approximately determined from experiment and compared with the experimental vibrational temperature. The results show that the presented calculational method is effective, and the electronic energy of N2+ is excited much faster than its vibrational energy. One Langmuir probe was used to determine the effective time of region 2. The influence of viscosity in the shock tube is also analyzed.

Effects of anode temperature on working characteristics and performance of a low power arcjet thruster

An arc-heated thruster of 130–800 W input power is tested in a vacuum chamber at pressures lower than 20 Pa with argon or H2–N2 gas mixture as propellant. The time-dependent arc voltage-current curve, outside-surface temperature of the anode nozzle and the produced thrust of the firing arcjet thruster are measured in situ simultaneously, in order to analyze and evaluate the dependence of thruster working characteristics and output properties, such as specific impulse and thrust efficiency, on nozzle temperature.

Temperature characteristics of optical parameters of phthalocyanine LB films and spin-coated films

The LB films and spin-coated films of tetra-neopentoxy phthalocyanine zinc (TNPPcZn) were prepared and annealed at different temperatures. Their refractive index (n) and extinction coefficient (k) were measured by p-polarized reflectance. The similar value of n and k, as well as similar changing tendency of it and k at varied annealing temperatures, was found between LB films and spin-coated films. In addition, the absorption curves of TNPPcZn LB films and spin-coated films in visible range at different annealing temperature were investigated. The results indicate that the changing tendency of the extinction coefficient of two kinds of TNPPcZn films obtained from two methods mentioned above were coincident. When the annealing temperature increased to 150 degrees C, the monomers of TNPPcZn films transformed to aggregates, n(f) and k(f) of the films increased. Further, n(f) and k(f) decreased as aggregates changed back to monomers again at the annealing temperature of 300 degrees C. The experimental results coincide well with the theoretical analysis. (C) 2004 Elsevier B.V. All rights reserved.