An In-Situ Observation On Initial Aggregation Process Of Colloidal Particles Near Three-Phase Contact Line Of Air, Water And Vertical Substrate

The self-assembling process near the three-phase contact line of air, water and vertical substrate is widely used to produce various kinds of nanostructured materials and devices. We perform an in-situ observation on the self-assembling process in the vicinity of the three phase contact line. Three kinds of aggregations, i.e. particle-particle aggregation, particle-chain aggregation and chain-chain aggregation, in the initial stage of vertical deposition process are revealed by our experiments. It is found that the particle particle aggregation and the particle-chain aggregation can be qualitatively explained by the theory of the capillary immersion force and mirror image force, while the chain-chain aggregation leaves an opening question for the further studies. The present study may provide more deep insight into the self-assembling process of colloidal particles.

On the initial unloading slope in indentation of elastic-plastic solids by an indenter with an axisymmetric smooth profile

A simple relationship between the initial unloading slope, the contact area, and the elastic modulus is derived for indentation in elastic-plastic solids by an indenter with an arbitrary axisymmetric smooth profile. Although the same expression was known to hold for elastic solids, the new derivation shows that it is also true for elastic-plastic solids with or without work hardening and residual stress. These results should provide a sound basis for the use of the relationship for mechanical property determination using indentation techniques. (C) 1997 American Institute of Physics.

Ion bombardment as the initial stage of diamond film growth

It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.