Superconductivity in Iron Telluride Thin Films under Tensile Stress

By realizing in thin films a tensile stress state, superconductivity of 13 K was introduced into FeTe, a nonsuperconducting parent compound of the iron pnictides and chalcogenides, with a transition temperature higher than that of its superconducting isostructural counterpart FeSe. For these tensile stressed films, superconductivity is accompanied by a softening of the first-order magnetic and structural phase transition, and also, the in-plane extension and out-of-plane contraction are universal in all FeTe films independent of the sign of the lattice mismatch, either positive or negative. Moreover, the correlations were found to exist between the transition temperatures and the tetrahedra bond angles in these thin films.

Sulfur forming an isoelectronic center in zinc telluride thin films

ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence (PL) as a function of temperatures, excitation powers, and hydrostatic pressures. A sulfur-related emission peak, labeled as P-2, is identified as a deep-level emission by hydrostatic-pressure PL measurement. This indicates that sulfur atoms form isoelectronic centers in a ZnTe matrix. The results qualitatively agree with the theoretical prediction and show experimental evidence of isoelectronic S in ZnTe. A model is proposed to explain the emission mechanisms in the ZnTe1-xSx system with small x values.

Hydrothermal synthesis and thermoelectric transport properties of impurity-free antimony telluride hexagonal nanoplates

Impurity-free single-crystalline antimony telluride hexagonal nanoplates (see figure) are synthesized by a facile and quick hydrothermal treatment without any organic additives or templates. The inherent crystal structure is the driving force for the growth of these Sb2Te3 hexagonal nanoplates. Films of these nanoplates shows p-type behavior, and exhibit a promisingly high Seebeck coefficient of 425 mu V K-1 at room temperature.

TeO2对氟铝酸盐玻璃性质和结构的影响

以10MgF2—20CaF2—10SrF2—10BaF2—15YF3—35AlF3氟铝酸盐玻璃为基玻璃引入不同含量的TeO2得到了新的氟碲铝酸盐玻璃．用差热分析方法研究了TeO2对氟铝酸盐玻璃性能的影响，通过拉曼光谱和红外吸收谱来研究玻璃的结构变化．差热分析表明TeO2的增加使玻璃开始析晶温度瓦升高，融化温度％降低，成玻璃能力增加．玻璃结构分析表明氟碲铝酸盐玻璃的结构中存在[FnAl-O—AlFn]、[TeO3]、[TeO2F]和[TeOF2]等多面体，这些多面体由F^-和O^2-离子连接．这种新的氟碲铝

透红外含碲氟铝基玻璃的激光损伤阈值

在氟铝酸盐玻璃组分中加入适量声子能量低的重金属氧化物TeO2，得到一种新的氧氟化物玻璃。该材料具有良好的成玻璃性能，适合制作大尺寸红外窗口镜。研究了TeO2含量对玻璃特征温度、阿贝数和红外透过性能的影响。同时测试了这种玻璃的抗DF激光能力，结果表明：TeO2含量为15％的玻璃，DF激光破坏阈值达14．95kW·cm^-2。分析显示，由于玻璃基质的多声子吸收，对激光能量的吸收而引起的热冲击是导致玻璃破坏的主要原因。进一步降低玻璃中水分，可以提高玻璃抗激光破坏性能。

Influence of heat treatment on spectroscopic properties of Er3+ in multicomponent ZrF4-ZnF2-AlF3-YF3-MF2 (M = Ca, Sr, Ba) based glass

Er3+ doped multicomponent fluoride based glass was prepared. These precursor fluoride glass samples were then heated using different schedules. Crystalline phase particles were successfully precipitated in the multicomponent fluoride glass samples after heat treatment. The influence of heat treatment on the spectroscopic properties of Er3+ in multicomponent fluoride based glass samples were discussed. Small changes of the Judd-Ofelt parameters Omega(i) (i = 2,4,6) were found in multicomponent fluoride glass samples before and after heat treatment compared to oxyfluoride telluride glass. Preparation conditions used to produce transparent multicomponent fluoride glass ceramics doped with rare-earth ions are discussed. (c) 2007 Elsevier B.V. All rights reserved.

New transparent Er3+-doped oxyfluoride tellurite glass ceramic with improved near infrared and up-conversion fluorescence properties

Transparent glass ceramics have been obtained by nucleation and growth of Y2Te6O15 or Er2Te5O13 cubic phase in a new Er3+-doped oxyfluoride tellurite glass. Effect of beat treatment on absorption spectra, luminescence and up-conversion properties in the oxyfluoride tellurite glass has been investigated. With heat treatment the ultraviolet absorption edge red shifted evidently for the oxyfluoride telluride glass. The near infrared emission that corresponds to Er3+:I-4(13/2)-> I-4(15/2) can be significantly enhanced after heat treatment. Under 980 nm LD pumping, red and green up-conversion intensity of Er3+ in the glass ceramic can be observed much stronger than that in the base glass. (C) 2006 Elsevier B.V. All rights reserved.

Effect of F- ions on physical and spectroscopic properties of Yb3+-doped TeO2-based glasses

The effects of F- ions on physical and spectroscopic properties of the Yb3+ in tellurite glass system are investigated. The results show that the glass system takes on good thermal stability with the content of ZnF2 lower than 15 mol%, both the emission cross-section and the fluorescence lifetime of Yb3+ ions increase evidently which indicate that such oxyfluoride tellurite glass system is a promising laser host matrix for high power generation. FT-IR spectra were used to analyze the effect of F- ions on the structure of tellurite glasses and OH- groups in this glass system. Analysis demonstrates that addition of fluoride decreases the symmetry of the structure of tellurite glasses which increases the emission cross-section and removes the OH- groups, and which improves the measured fluorescence lifetime of Yb3+ ions. (c) 2004 Elsevier B.V. All rights reserved.

Fluorescence lifetime increase by introduction of F- ions in ytterbium-doped TeO2-based glasses

this paper was retracted

Electronic structure and electron g factors of HgTe quantum dots

The electronic structure and electron g factors of HgTe quantum dots are investigated, in the framework of the eight-band effective-mass approximation. It is found that the electron states of quantum spheres have aspheric properties due to the interaction between the conduction band and valence band. The highest hole states are S (l = 0) states, when the radius is smaller than 9.4 nm. the same as the lowest electron states. Thus strong luminescence from H-Te quantum dots with radius smaller than 9.4 nm has been observed (Rogach et al 2001 Phys. Statits Solidi b 224 153). The bandgap of H-Te quantum spheres is calculated and compared with earlier experimental results (Harrison et al 2000 Pure Appl. Chem. 72 295). Due to the quantum confinement effect, the bandgap of the small HgTe quantum spheres is positive. The electron g factors of HgTe quantum spheres decrease with increasing radius and are nearly 2 when the radius is very small. The electron g factors of HgTe quantum ellipsoids are also investigated. We found that as some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension.

Synthesis of polycrystalline nanotubular Bi2Te3

Polycrystalline nanotubular Bi2Te3 could be prepared via a high-temperature solution process using nanoscale tellurium, decomposed from trioctylphosphine oxide (TOPO) extracted tellurium species (Te-TOPO), as sacrificial template. The formation of such tubular structure is believed to be the result of outward diffusion of Te during the alloying process. The electrical properties (Seebeck coefficient and electrical conductivity) of the polycrystalline nanotubular Bi2Te3 have been studied and the experimental results show that the electrical conductivity is approximately three orders of magnitude smaller than bulk bismuth telluride materials mainly due to the much larger resistance brought by the insufficient contact between the nanotubular structures.

ELECTRODEPOSITION OF POLYCRYSTALLINE CD-RICH HG1-XCDXTE AND PHOTOELECTRO-CHEMICAL BEHAVIOR OF HG0.09CD0.91TE THIN-FILM

Electrodeposition process of polycrystalline Cd-rich Hg_(1-z)Cd_xTe (x>0.5) in acidic bath of CdSO_4+HTeO_2~+HgCl_2 was investigated. The simultaneous electrodeposition technique of three kinds of ions at the same potential has been achieved. The XRD, SEM and EDAX analysis of the thin film electrodeposited on titanium substrate showed a typical cubic zinc blende polycrystalline structure and homogeneous dispersion. The photoelectrochemical behavior of (1-x)=0.09 polycrystalline thin film in a polysulfide re...