Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

Nanocrystalline silicon (nc-Si) films were prepared by pulsed laser annealed crystallization of amorphous silicon (alpha-Si) films on SiO2-coated quartz or glass substrates. The effect of laser energy density on structural characteristics of nc-Si films was investigated. The Ni-induced crystallization of the a-Si films was also discussed. The surface morphology and microstructure of these films were characterized by scanning electron microscopy, high-resolution electron microscopy, atomic force microscopy and Raman scattering spectroscopy. The results show that not only can the alpha-Si films be crystallized by the laser annealing technique, but also the size of Si nanocrystallites can be controlled by varying the laser energy density. Their average size is about 4-6 nm. We present a surface tension and interface strain model used for describing the laser annealed crystallization of the alpha-Si films. The doping of Ni atoms may effectively reduce the threshold value of laser energy density to crystallize the alpha-Si films, and the flocculent-like Si nanostructures could be formed by Ni-induced crystallization of the alpha-Si films.

Structural characteristics and redox behaviors of Ce1-xCuxOy solid solutions

Nanosized Ce1-xCuxOy materials were prepared by complexation-combustion method. The structural characteristics and redox behaviors were investigated using X-ray diffraction (XRD), temperature programmed reduction (H-2-TPR), UV-Vis, and Raman spectroscopies. In XRD patterns, no evidence of CuO diffraction peaks are observed for the Ce1-xCuxOy samples calcinated at 650 degreesC for 5 h, until the Cu/(Ce + Cu) ratio is higher than 0.4. The stepwise decrease of the 2theta value of CeO2 in Ce1-xCuxOy with the increasing of Cu concentration suggests that the CU2+ ions incorporate into the CeO2 lattice to form Ce1-xCuxOy solid solutions for low Cu/(Ce + Cu) ratios (x less than or equal to 0.1). The CuO phase begins to segregate from the solid solutions with the further increasing of Cu/(Ce+Cu) ratio. The Raman mode at 1176 cm(-1) ascribed to the enhanced defects appears for CeO2 and the Ce0.9Cu0.1Oy solid solution. Compared with CeO2 alone, the Raman mode of cubic CeO2 shifts from 462 to 443 cm(-1) for the Ce0.9Cu0.1Oy solid solution. The H-2 consumption of the fresh Ce0.95Cu0.05Oy is 1.65 times higher than that needed to reduce CuO to Cu, and it increases to 2.4 after a reoxidation of the partially reduced Ce0.95Cu0.05Oy at 300 degreesC, which indicates that the CeO2 phase is also extensively reduced. Compared with the high Cu/(Ce+Cu) ratio sample Ce0.7Cu0.3Oy, the Ce0.9Cu0.1Oy solid solution shows high and stable redox property even after different reoxidation temperatures. When the reoxidation temperature exceeds 200 degreesC, the a peak (similar to170 degreesC) ascribed to the reduction of surface oxygen disappears, and the P peak (similar to190 degreesC) ascribed to the reduction of Cu2+ species and the partial reduction of bulk CeO2 shifts to higher temperatures with the H-2 consumption 1.16 times higher than that for fresh sample. The result demonstrates that the redox property of the CeO2 is Significantly improved by forming the Ce1-xCuxOy solid solutions.

Structural characteristics and thermal properties of plasticized poly(L-lactide)-silica nanocomposites synthesized by sol-gel method

Plasticized poly(L-lactide)-silica nanocomposite materials have been successfully synthesized by sol-gel process. The resultant nanocomposites were characterized by infrared spectra (IR), X-ray diffraction (XRD), thermogravimetry (TG), Tensile testing and scanning electron microscope (SEM). IR measurements show that vibration of C-O-C group is confined by silica network. Also the crystallization of poly (L-lactide) is partly confined by silica network. The presence of even small amount of silica largely improves the tensile strength of the samples, TGA results reveal that the thermal stability of samples is improved with silica loading.

Mechanical and structural characteristics of phenolphthalein poly(ether sulfone) ultra-high molecular weight polyethylene blends

Mechanical and structural properties of blends of phenolphthalein poly(ether sulfone) (PBS-C) with ultra-high molecular weight polyethylene (UHMWPE) were investigated using tensile and bending testing, scanning electron microscopy and transition electron microscopy. The incorporation of minor amounts of UHMWPE (2 wt.-%) into PES-C has a reinforcement effect. With higher concentrations of UHMWPE, the mechanical properties decrease gradually. Structural studies demonstrated that the blends are multiphasic in the whole composition range. The minor UHMWPE, dispersed uniformly and oriented along the flow direction, as well as the strong interfacial adhesion contribute to the increase of the mechanical performance of the blends. The domain size of the UHMWPE phase was found to increase with the increase of its concentration.

Optical, structural and laser-induced damage threshold properties of HfO2 thin films prepared by electron beam evaporation

We prepare HfO2 thin films by electron beam evaporation technology. The samples are annealed in air after deposition. With increasing annealing temperature, it is found that the absorption of the samples decreases firstly and then increases. Also, the laser-induced damage threshold (LIDT) increases firstly and then decreases. When annealing temperature is 473K, the sample has the highest LIDT of 2.17J/cm(2), and the lowest absorption of 18 ppm. By investigating the optical and structural characteristics and their relations to LIDT, it is shown that the principal factor dominating the LIDT is absorption.

Structural characterization of cubic GaN grown on GaAs(001) substrates

Structural characteristics of cubic GaN epilayers grown on GaAs(001) were studied using X-ray double-crystal diffraction technique. The structure factors of cubic GaN(002) and (004) components are approximately identical. However, the integrated intensities of the rocking curve for cubic (002) components are over five times as those of (004) components. The discrepancy has been interpreted in detail considering other factors. In the conventional double crystal rocking curve, the peak broadening includes such information caused by the orientation distribution (mosaicity) and the distribution of lattice spacing. These two kinds of distributions can be distinguished by the triple-axis diffraction in which an analyser crystal is placed in front of the detector. Moreover, the peak broadening was analysed by reciprocal lattice construction and Eward sphere. By using triple-axis diffraction of cubic (002) and (113) components, domain size and dislocation density were estimated. The fully relaxed lattice parameter of cubic GaN was determined to be about 0.451 +/- 0.001nm.

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON

The electrical and structural characteristics of secondary defects in regrown amorphous layers formed in n-type Si(100) with a resistivity of 2 OMEGA cm and 6 OMEGA cm using Ge+ ions, has been studied. The amorphous layers with a thickness of 460 nm are formed by implantation of 1 x 10(15) Ge+ cm-2 at an energy of 400 keV. Both conventional furnace and rapid thermal annealing were used to regrow the amorphous layer and the residual defects have been characterised in terms of their concentration depth distribution and activation energies using C-V and DLTS. Structural information has been obtained from RBS and XTEM. By choosing suitable anneal conditions it is possible to eliminate extended defects, apart from a low concentration of end of range dislocation loops. However, a substantial population of electrically active point defects remain after simple low thermal budget anneals. In a sample implanted with 1 x 10(15) Ge+ cm-2 at 400 keV a region of deep donors approximately 460 nm from the surface is always present When the samples are annealed at higher temperatures (> 850-degrees the total deep donor concentration is reduced by one order of magnitude. Other electrically active defects not observable in the low (750-degrees-C) temperature annealed layers become apparent during anneals at intermediate temperatures.

Structure and device characteristics of AlxGa1-xAs/GaAs solar cells

AlGa1-xAs/GaAs heterostructures have been grown by two different liquid phase epitaxy (LPE) modes, i.e. the supercooled and melt-etch methods, for the fabrication of highly efficient solar cells. Typical structural characteristics observed under a transmission electron microscope (TEM), an Auger energy spectrometer (AES) and corresponding device parameters were presented. The results indicated that the P+PNN+ configuration grown by the melt-etch method could be used to produce high performance, large area solar cells with effectively reducing the defects of the substrate and improving the minority carrier collection by forming a compositionally graded region in the window layer.

MOLECULAR CHARACTERISTICS AND CRYSTALLINE-STRUCTURE OF ETHYLENE-DIMETHYLAMINOETHYL-METHACRYLATE COPOLYMERS

The relationship between molecular and crystalline structural characteristics of the ethylene -dimethylaminoethylmethacrylate copolymers (EDAM) was investigated and related to melt flow index MI and average gross content of DAM comonomer, in comparison with low density polyethylene (LDPE) produced by the common high-pressure radical polymerization process. Although the average molecular weight and its distribution are influenced predominantly by the polymerization conditions, DAM-content seems not to depend significantly on molecular weight according to the GPC-FT/IR measurement. Comonomer sequence distributions were determined quantitatively with the C-13-NMR spectra entirely assigned by DEPT and H-1-C-13 COSY techniques. The result suggests the alternating copolymerization tendency and surprisingly coincides with the simulation out-puts based on the assumption of continuous complete mixing reactor model, using Mayo-Lewis equation and the same Q-e values as previously reported on different types of copolymers such as EVA and St.DAM (VA;vinylacetate, St;styrene). It was confirmed by WAXD and SAXS analyses that the crystallinity X(c) and the thickness of lamellar crystal l(c) decreased with increasing DAM-content, whereas the a-lattice and b-lattice dimensions enlarged. X(c) and l(c) can definitely be correlated to the heats of fusion and crystallization measured by DSC. The average size of spherulites measured with light scattering photometry tends to be enlarged with decreasing molecular weight (increasing MI) and DAM-content.

Pattern Recognition With Weighted Complex Networks

In this paper we introduce a weighted complex networks model to investigate and recognize structures of patterns. The regular treating in pattern recognition models is to describe each pattern as a high-dimensional vector which however is insufficient to express the structural information. Thus, a number of methods are developed to extract the structural information, such as different feature extraction algorithms used in pre-processing steps, or the local receptive fields in convolutional networks. In our model, each pattern is attributed to a weighted complex network, whose topology represents the structure of that pattern. Based upon the training samples, we get several prototypal complex networks which could stand for the general structural characteristics of patterns in different categories. We use these prototypal networks to recognize the unknown patterns. It is an attempt to use complex networks in pattern recognition, and our result shows the potential for real-world pattern recognition. A spatial parameter is introduced to get the optimal recognition accuracy, and it remains constant insensitive to the amount of training samples. We have discussed the interesting properties of the prototypal networks. An approximate linear relation is found between the strength and color of vertexes, in which we could compare the structural difference between each category. We have visualized these prototypal networks to show that their topology indeed represents the common characteristics of patterns. We have also shown that the asymmetric strength distribution in these prototypal networks brings high robustness for recognition. Our study may cast a light on understanding the mechanism of the biologic neuronal systems in object recognition as well.

SiO2 对Bi2O3-B2O3 玻璃体系光学、热学及结构的 影响

Glasses with compositions 50Bi2O3-xB2O3- (50-x)SiO2(x=0, 10, 20, 30, 40, 50) in mol% have been prepared by using a normal melt-quench technique. The effect of SiO2 addition on thermal stability, optical properties and structural characteristic on Bi2O3-B2O3 glass were systematically investigated by using XRD, DTA, ultraviolet-visible transmittance spectra, midinfrared transmittance spectra and Raman spectra. The experimental results demonstrate that, with the addition of SiO2, thermal stability of glass samples has been obviously improved. Once the amount of SiO2 is too much, the glass samples tend to be phase seperation which results in the decrease of thermal stability. With increasing SiO2 content, the UV cutoff edge firstly shifts to short-wave band and then shifts to long-wave band, and the transmittance of mid-infrared has been greatly improved. With substitution of SiO2 for B2O3, the [BO3] triangles and [BO4] tetrahedral groups are gradually replaced by [SiO4]. [BiO6] octahedral and [SiO4] tetrahedral units are connected forming a vibrational mode of Bi-O-Si. The physical chemistry and optical performance of Bi2O3-B2O3 glass were greatly improved by addition of SiO2.