9 resultados para Street lighting

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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It is shown that in a Karman vortex street flow, particle size influences the dilute particle dispersion. Together with an increase of the particle size, there is an emergence of a period-doubling bifurcation to a chaotic orbit, as well as a decrease of the corresponding basins of attraction. A crisis leads the attractor to escape from the central region of flow. In the motion of dilute particles, a drag term and gravity term dominate and result in a bifurcation phenomenon.

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Three types of streamline topology in a Karman vortex street flow are shown under the variation of spatial parameters. For the motion of dilute particles in the Karman vortex street flow, there exist a route of bifurcation to a chaotic orbit and more attractors in a bifurcation diagram for the proportion of particle density to fluid density. Along with the increase of spatial parameters in the flow field, the bifurcation process is suspended, as well as more and more attractors emerge. In the motion of dilute particles, a drag term and gravity term dominate and result in the bifurcation phenomenon.

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In this article, the ZnO quantum dots-SiO2 (Z-S) nanocomposite particles were first synthesized. Transparent Z-S/epoxy super-nanocomposites were then prepared by introducing calcined Z-S nanocomposite particles with a proper ratio of ZnO to SiO2 into a transparent epoxy matrix in terms of the filler-matrix refractive index matching principle. It was shown that the epoxy super-nanocomposites displayed intense luminescence with broad emission spectra. Moreover, the epoxy super-nanocomposites showed the interesting afterglow phenomenon with a long phosphorescence lifetime that was not observed for ZnO-QDs/epoxy nanocomposites. Finally, the transparent and light-emitting Z-S/epoxy super-nanocomposites were successfully employed as encapsulating materials for synthesis of highly bright LED lamps.

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Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.

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Simple single-dopant white organic light-emitting devices (WOLEDs) with optimized efficiency/color quality/brightness trade-offs are developed; the white light produced shows the best color quality ever exhibited by WOLEDs at very high brightness, and is even able to duplicate the natural sunlight source.