The effect of straining mode on void growth

Large strain finite element method is employed to investigate the effect of straining mode on void growth. Axisymmetric cell model embedded with spherical void is controlled by constant triaxiality: loading,while plane-stress model containing a circular void is loaded by constant ratio of straining. Elastic-plastic material is used for the matrix in both cases. It is concluded that, besides the known effect of triaxiality, the straining mode which intensifies the plastic concentration around the void is also a void growth stimulator. Experimental results are cited to justify the computation results.

On the mechanism of void growth and the effect of straining mode in ductile materials

Finite element analysis is employed to investigate void growth embedded in elastic-plastic matrix material. Axisymmetric and plane stress conditions are considered. The simulation of void growth in a unit cell model is carried out over a wide range of triaxial tensile stressing or large plastic straining for various strain hardening materials to study the mechanism of void growth in ductile materials. Triaxial tension and large plastic strain encircling around the void are found to be of most importance for driving void growth. The straining mode of incremental loading which favors the necessary strain concentration around void for its growth can be characterized by the vanishing condition of a parameter called "the third invariant of generalized strain rate". Under this condition, it accentuates the internal strain concentration and the strain energy stored/dissipated within the material layer surrounding the void. Experimental results are cited to justify the effect of this loading parameter. (C) 2000 Elsevier Science Ltd. All rights reserved.

Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining

Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D)). This finding is confirmed by varying the biaxial strain of the graphene, from which we observe that the shift of omega(2D)/2 and omega(D) are different. The employed technique allows a detailed study of the interplay between the graphene geometrical structures and its electronic properties.

Strain-Induced Grain Refinement of Cobalt During Surface Mechanical Attrition Treatment

The microstructural evolution during surface mechanical attrition treatment of cobalt (a mixture of hexagonal close packed (hep) and face-centered cubic (fcc) phases) was investigated. In order to reveal the mechanism of grain refinement and strain accommodation. The microstructure was systematically characterized by both cross-sectional and planar-view transmission electron microscopy. In the hcp phase, the process of grain refinement. Accompanied by an increase in strain imposed in the surface layer. Involved: (1) the onset of 110 111 deformation twinning, (2) the operation of (1 120) 110 1 0} prismatic and (1 120) (000 1) basal slip, leading to the formation of low-angle dislocation boundaries, and (3) the successive subdivision of grains to a finer and finer scale. Ressulting in the formation of highly misoriented nanocrystalline grains. Moreover. The formation of nanocrystalliies at the grain boundary and triple junction was also observed to occur concurrently with straining. By contrast. The fec phase accommodated strain in a sequence as follows: (1) slip of dislocations by forming intersecting planar arrays of dislocations, (2) {1 1 1} deformation twinning, and (3) the gamma(fcc) --> epsilon(hcp) martensitic phase transformation. The mechanism of grain refinement was interpreted in terms of the structural subdivision of grains together with dynamic recrystallization occurring in the hep phase and the gamma --> E: martensitic transformation in the fcc phase as well.

Analytical calculations of Eulerian and Lagrangian time correlations in turbulent shear flows

The Taylor series expansion method is used to analytically calculate the Eulerian and Lagrangian time correlations in turbulent shear flows. The short-time behaviors of those correlation functions can be obtained from the series expansions. Especially, the propagation velocity and sweeping velocity in the elliptic model of space-time correlation are analytically calculated and further simplified using the sweeping hypothesis and straining hypothesis. These two characteristic velocities mainly determine the space-time correlations.

Subgrid-scale contributions to Lagrangian time correlations in isotropic turbulence

The application of large-eddy simulation (LES) to particle-laden turbulence raises such a fundamental question as whether the LES with a subgrid scale (SGS) model can correctly predict Lagrangian time correlations (LTCs). Most of the currently existing SGS models are constructed based on the energy budget equations. Therefore, they are able to correctly predict energy spectra, but they may not ensure the correct prediction on the LTCs. Previous researches investigated the effect of the SGS modeling on the Eulerian time correlations. This paper is devoted to study the LTCs in LES. A direct numerical simulation (DNS) and the LES with a spectral eddy viscosity model are performed for isotropic turbulence and the LTCs are calculated using the passive vector method. Both a priori and a posteriori tests are carried out. It is observed that the subgrid-scale contributions to the LTCs cannot be simply ignored and the LES overpredicts the LTCs than the DNS. It is concluded from the straining hypothesis that an accurate prediction of enstrophy spectra is most critical to the prediction of the LTCs.

Influence of processing temperature on microstructure and microhardness of copper subjected to high-pressure torsion

Cu samples were subjected to high-pressure torsion (HPT) with up to 6 turns at room temperature (RT) and liquid nitrogen temperature (LNT), respectively. The effects of temperature on grain refinement and microhardness variation were investigated. For the samples after HPT processing at RT, the grain size reduced from 43 mu m to 265 nm, and the Vickers microhardness increased from HV52 to HV140. However, for the samples after HPT processing at LNT, the value of microhardness reached its maximum of HV150 near the center of the sample and it decreased to HV80 at the periphery region. Microstructure observations revealed that HPT straining at LNT induced lamellar structures with thickness less than 100 nm appearing near the central region of the sample, but further deformation induced an inhomogeneous distribution of grain sizes, with submicrometer-sized grains embedded inside micrometer-sized grains. The submicrometer-sized grains with high dislocation density indicated their nonequilibrium nature. On the contrary, the micrometer-sized grains were nearly free of dislocation, without obvious deformation trace remaining in them. These images demonstrated that the appearance of micrometer-sized grains is the result of abnormal grain growth of the deformed fine grains.

Synthesis and electrical properties of new solid state. Electrolyte materials Ce5.2RE0.8MoO15-delta

A series of solid state electrolytes, Ce-5.2 RE0.8 MoO15-delta (RE = Y, La, Sm, Gd, Dy, Ho, Er), were synthesized by sol-gel method. Their structures and electrical conductivities were characterized by X-ray Diffraction (XRD), Raman and X-ray Photoelectron Spectroscopy (XPS) and AC impedance spectroscopy, respectively. The results show that the concentrations of oxygen vacancy increased with increasing x and their conductivity were improved. And the cell parameters increase as the radius of RE3+ increases. Because the ionic radius of doped Dy3+ (0.0908 nm) is closed to that of Ce4+ (0.0920 nm), their oxide has minimal cell elastic straining between RE3+ and oxygen vacancy, and the system has the least association enthalpy, thus the oxide Ce-5.2 Dy-0.8 MoO15-delta exhibits a higher conductivity (7.02 x 10(-3) S/cm) and lower activation energy (1.056 eV) compared to the other doped compounds.